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公开(公告)号:US09564179B2
公开(公告)日:2017-02-07
申请号:US15089801
申请日:2016-04-04
Applicant: TDK CORPORATION
Inventor: Susumu Taniguchi , Hisayuki Abe
CPC classification number: G11B33/1426 , G11B17/00 , G11B25/043 , G11B33/1446 , G11B33/148
Abstract: A spoiler (40) that is a rectifying component for a magnetic disk device including a flat plate-like plate portion (41) arranged to face a magnetic disk (10), and a support portion (42) that supports the plate portion (41) includes a body portion (401) made of a resin, and a metal plating layer (402) that covers an entire surface of the body portion (401).
Abstract translation: 作为用于磁盘装置的整流部件的扰流器(40),包括布置成面对磁盘(10)的平板状板部分(41)和支撑板部分(41)的支撑部分(42) )包括由树脂制成的主体部分(401)和覆盖主体部分(401)的整个表面的金属镀层(402)。
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公开(公告)号:US09070606B2
公开(公告)日:2015-06-30
申请号:US13960228
申请日:2013-08-06
Applicant: TDK CORPORATION
Inventor: Kenichi Yoshida , Makoto Orikasa , Hideyuki Seike , Yuhei Horikawa , Hisayuki Abe
IPC: H01L23/485 , H01L23/492 , H01L23/00
CPC classification number: H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0347 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/05655 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/13005 , H01L2224/13006 , H01L2224/13023 , H01L2224/13111 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2224/05552
Abstract: The present invention relates to a terminal structure comprising: a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, a height Hbm at which the bump has a maximum diameter (Lbm) is lower than a maximum height Hu of the under-bump metal layer.
Abstract translation: 本发明涉及一种端子结构,包括:基材10; 形成在基材上的外部电极20; 绝缘涂层30,形成在基材和电极上,并具有露出电极的至少一部分的开口; 填充绝缘涂层的开口和覆盖部分的凸块下金属层70; 以及覆盖凸块下金属层的圆顶状凸起85,其中在沿着层叠方向的截面中,所述凸块具有最大直径(Lbm)的高度Hbm低于所述凸块下凸块的最大高度Hu, 凸块金属层。
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