摘要:
The method for parallel operation of moisture generating reactors according to the present invention operates so that an orifice, provided with an orifice hole having a predetermined opening diameter, is disposed on a mixed-gas inlet side of each of a plurality of moisture generating reactors connected in parallel with each other, and mixed gas G consisting of hydrogen and oxygen is supplied from a mixer to each of the moisture generating reactors through each orifice, and the flows of moisture generated by the moisture generating reactors are combined, and the resulting combined moisture is supplied to an apparatus that uses high-purity water. Thus, a need to increase the amount of high-purity water supply is met by allowing a plurality of moisture generating reactors to perform a parallel water generating operation by branching off a mixed gas consisting of H2 and O2 by using a simple orifice construction.
摘要:
An apparatus for the treatment of exhaust gases containing hydrogen which permits always stable treatment with certainty of the exhaust gases from a semiconductor manufacturing line or the like irrespective of violent fluctuations in the flow rate of the exhaust gases, without having adverse effects on the operation of the semiconductor manufacturing line. The apparatus comprises: an ejector-type vacuum generator having a suction port connected to the discharge source of exhaust gases containing hydrogen and having a drive fluid supply port connected to an oxygen supply source, a hydrogen-oxygen reactor provided with a catalyst and connected to a drive fluid discharge port of the vacuum generator, and a drain reservoir connected to an outlet of the reactor for storing water discharged therefrom.
摘要:
A reactor for generating moisture, with which hydrogen and oxygen fed into the reactor contact with a platinum coating catalyst layer to activate reactivity so that hydrogen and oxygen react under conditions of non-combustion, wherein the reactor includes a cooler comprising a heat dissipation body substrate in which a heater insertion hole is made in the center to fix to the outer surface of the reactor structural component on the outlet side and a cooler on the outlet side made up of a plural number of heat dissipation bodies installed vertically in parallel on the part excluding the area where the afore-mentioned heater insertion hole of the heat dissipation body substrate exists, and a part of the heater to heat the reactor is inserted in the heater insertion hole so as to fix to the outer surface of the reactor structural component on the outlet side.
摘要:
A reactor for generating moisture, with which hydrogen and oxygen fed into the reactor contact with a platinum coating catalyst layer to activate reactivity so that hydrogen and oxygen react under conditions of non-combustion, wherein the reactor includes a cooler comprising a heat dissipation body substrate in which a heater insertion hole is made in the center to fix to the outer surface of the reactor structural component on the outlet side and a cooler on the outlet side made up of a plural number of heat dissipation bodies installed vertically in parallel on the part excluding the area where the afore-mentioned heater insertion hole of the heat dissipation body substrate exists, and a part of the heater to heat the reactor is inserted in the heater insertion hole so as to fix to the outer surface of the reactor structural component on the outlet side.
摘要:
A process of supplying moisture at low flow rates which permits high precision control of the flow of moisture to a semiconductor manufacturing line from an apparatus for the generation of moisture, characterized in that the flow of hydrogen to a moisture-generating reactor is controlled by means of a flow controller in such a way that an amount of hydrogen as fed is gradually increased from the start and reaches a specific set level such that when a specific time has passed, a predetermined rate of moisture begins to be produced and supplied to the semiconductor manufacturing line. The moisture is generated in the apparatus for generation of moisture in which hydrogen and oxygen are (a) fed into a reactor provided with a coat of platinum on the wall in the interior space, (b) enhanced in reactivity by the platinum catalytic action, and (c) caused to instantaneously react with each other at a temperature lower than the ignition point to produce moisture without undergoing combustion at a high temperature.
摘要:
A pressure type flow rate control apparatus (1) for controlling flow rate of a fluid maintains an upstream side pressure P1 of an orifice at more than about twice a downstream side pressure P2. In addition to an orifice-forming member (5) the apparatus includes a control valve (2) provided at the upstream side of the orifice, a pressure detector (3) provided between the control valve and the orifice, and an operation control device (6) for calculating a flow rate Qc from the detected pressure P1 of the pressure detector as Qc=KP1 (K being a constant) and issuing a difference as a control signal Qy between a flow rate command signal Qs and the calculated flow rate Qc to a drive unit of the control valve. The orifice upstream side pressure P1 is adjusted by opening and closing the control valve, thereby controlling the orifice downstream side flow rate.
摘要:
A pressure type flow rate control apparatus (1) for controlling flow rate of a fluid maintains an upstream side pressure P1 of an orifice at more than about twice a downstream side pressure P2. In addition to an orifice-forming member (5) the apparatus includes a control valve (2) provided at the upstream side of the orifice, a pressure detector (3) provided between the control valve and the orifice, and an operation control device (6) for calculating a flow rate Qc from the detected pressure P1 of the pressure detector as Qc=KP1 (K being a constant) and issuing a difference as a control signal Qy between a flow rate command signal Qs and the calculated flow rate Qc to a drive unit of the control valve. The orifice upstream side pressure P1 is adjusted by opening and closing the control valve, thereby controlling the orifice downstream side flow rate.
摘要:
An apparatus for mixing and feeding plural gases flowing at different mass flow rates and having different molecular weights includes a plurality of gas feed lines connected to a mixing region having an outlet for feeding a mixture of the gases to a semiconductor production apparatus. The gas feed line carrying the lowest-flow-rate gas is connected to the mixing region at a location farther from the outlet than where any other feed line is connected to the mixing region. Feed lines carrying gases other than the lowest-flow-rate gas are connected to the mixing region according to (1) the relative mass flow rates of the gases carried by the lines (2) the relative molecular weights of the gases carried by the lines or (3) the product of the respective gas flow rates and molecular weights of the gases. At least the line carrying the lowest-flow-rate gas is provided with an apparatus for increasing the velocity of the gas flowing therein prior to entry of the gas into the mixing region.
摘要:
A vacuum deposition chamber alternately receives a reactive gas and an inert gas during a process in which a thin film is formed on a wafer in the chamber. The inert gas flows through a first pressure regulator, a first feed line and a first changeover valve into the chamber. The reactive gas flows through a second pressure regulator, a second feed line and a second changeover valve into the chamber. A vent line is connected to a vacuum pump and a pressure regulating valve which vents to the atmosphere to thereby control the vacuum pressure in the vent line. A first shunt valve is connected between the vent line and the first feed line and a second shunt valve is connected between the vent line and the second feed line. When the first changeover valve is opened to permit flow of reactive gas into the chamber, the second shunt valve is opened to evacuate the second feed line and when the second changeover valve is opened to permit flow of inert gas into the chamber, the first shunt valve is opened to evacuate the first feed line. By alternately evacuating the feed lines, pressure fluctuations which usually occur in the chamber at the time of changeover from one gas to the other, are suppressed.
摘要:
A control valve comprises a valve body having a fluid channel and a valve seat; a valve operating part; a valve stem supporting member having its upper end fixed to the valve operating part and its lower end fixed to the valve body; a valve stem penetrating the valve stem supporting member and having its upper end part connected to the valve operating part and its lower end part entering the valve body, the valve stem being movable upward or downward by the valve operating part; and a valve element attached to the lower end of the valve stem. The valve element is moved upward or downward by moving the valve stem upward or downward, the valve element being brought into contact with and seated in the valve seat to close a fluid channel as it is moved downward, the valve element being detached from the valve seat to open the fluid channel as it is moved upward. The valve stem supporting member has an upper tubular body and a lower tubular body, the upper tubular body having its upper end fixed to the valve operating part and its lower end detached from the valve body, the lower tubular body having its lower end fixed to the valve body and its upper end detached from the valve operating part, the two tubular bodies being spaced apart each other, the lower end part of the upper tubular body and the upper end part of the lower tubular body being connected by a connecting member.