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    Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process
    35.
    发明申请
    Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process 有权
    含氟硅化合物，硅树脂，抗蚀剂组合物和图案化工艺

    公开(公告)号：US20070218402A1

    公开(公告)日：2007-09-20

    申请号：US11713709

    申请日：2007-03-05

    申请人： Takeshi Kinsho ,  Mutsuo Nakashima ,  Koji Hasegawa ,  Takeru Watanabe

    发明人： Takeshi Kinsho ,  Mutsuo Nakashima ,  Koji Hasegawa ,  Takeru Watanabe

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0757 ,  C07F7/1804 ,  G03F7/0045 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108

    摘要： Fluorine-containing silicon compounds having the general formula (1): wherein X1, X2, and X3 each are hydrogen, hydroxyl, halogen, a straight, branched or cyclic alkoxy group of 1 to 6 carbon atoms, or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, Y is a divalent organic group, R1 and R2 are each independently hydrogen or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, or R1 and R2 may bond together to form a ring with the carbon atom to which they are attached silicone resins obtained from the compounds of formula (1) has an appropriate acidity to enable formation of a finer pattern while minimizing the pattern collapse by swelling when used in a resist composition.

    摘要翻译： 具有通式（1）的含氟硅化合物：其中X 1，X 2和X 3各自为氢，羟基， 卤素，1〜6个碳原子的直链，支链或环状烷氧基，或具有直链，支链，环状或多环骨架的1〜20个碳原子的一价有机基团，Y为二价有机基团， 1和R 2各自独立地为氢或具有直链，支链，环状或多环骨架的1至20个碳原子的一价有机基团，或R 1 >和R 2可以键合在一起形成与它们所连接的碳原子形成的环，由式（1）化合物获得的有机硅树脂具有适当的酸度以使得能够形成更精细的图案，同时 当在抗蚀剂组合物中使用时，通过溶胀使图案崩溃最小化。

    Patterning process
    39.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08198016B2

    公开(公告)日：2012-06-12

    申请号：US12453241

    申请日：2009-05-04

    申请人： Jun Hatakeyama ,  Tsutomu Ogihara ,  Mutsuo Nakashima ,  Kazuhiro Katayama

    发明人： Jun Hatakeyama ,  Tsutomu Ogihara ,  Mutsuo Nakashima ,  Kazuhiro Katayama

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/095 ,  G03F7/26 ,  G03F7/40

    CPC分类号： G03F7/0035 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/0758 ,  G03F7/2024 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/115

    摘要： The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid.A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.

    摘要翻译： 本发明提供了一种图案化工艺，其中针对用于形成反转膜的组合物的有机溶剂的电阻呈现为正向图案，并且确保了对碱性蚀刻液的溶解性， 从而通过使用碱性蚀刻液进行湿式蚀刻，能够最终通过正负反转获得负像。 使用正负反转的本发明的抗蚀剂图案化工艺至少包括通过施加正型抗蚀剂组合物形成抗蚀剂膜的步骤; 通过曝光和显影抗蚀剂膜获得正图案的步骤; 将由此获得的正性抗蚀剂图案交联的步骤; 形成逆膜的步骤; 以及通过将碱性湿蚀刻液除去而将正极图案反转为负图案的步骤。