公开(公告)号：US5222549A

公开(公告)日：1993-06-29

申请号：US465246

申请日：1990-04-27

申请人： Hiroshi Ishii ,  Hiroo Tsuchiya ,  Teruji Kaneko ,  Tomio Kura ,  Ikuo Fujita ,  Yoshitoyo Ohkubo ,  Takashi Matsuoka

发明人： Hiroshi Ishii ,  Hiroo Tsuchiya ,  Teruji Kaneko ,  Tomio Kura ,  Ikuo Fujita ,  Yoshitoyo Ohkubo ,  Takashi Matsuoka

IPC分类号： B01D1/22 ,  B01D5/00 ,  F25J3/00 ,  F25J3/04

CPC分类号： B01D1/221 ,  B01D5/0015 ,  F25J5/005 ,  F25J2235/50 ,  F25J2245/50 ,  F25J2250/02 ,  F25J2250/04 ,  F25J2250/10 ,  F25J2250/20 ,  F25J2290/32 ,  F28D2021/0033

摘要： A condenser-evaporator is constituted in such a way that first fluid chambers and second fluid chambers are alternately formed by multiple vertical partitions and a liquid in the first fluid chambers exchange heat with a fluid in the second fluid chambers, characterized in that a plurality of heat exchanger plates are arranged in multiple stages in the first fluid chambers to form a liquid passage having one end open, a plurality of liquid reservoirs communicating with the liquid passage and having a top open are provided in multiple stages on a side of the other end of the liquid passage, and a liquid is introduced in the liquid passage for heat exchange while being supplied to the liquid reservoir in each stage. Accordingly, the depth of the liquid is shallow so as to prevent a boiling point elevation due to the liquid head pressure, thus improving the efficiency of the condenser-evaporator.

公开(公告)号：US5006908A

公开(公告)日：1991-04-09

申请号：US479068

申请日：1990-02-12

申请人： Takashi Matsuoka ,  Toru Sasaki

发明人： Takashi Matsuoka ,  Toru Sasaki

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/86 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/16 ,  H01S5/32341 ,  H01S2304/04 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/3202

摘要： An epitaxial growth structure for a semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate. A semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate, an insulating film formed on the single crystal film, and a metal electrode formed on the insulating film.

公开(公告)号：US4058414A

公开(公告)日：1977-11-15

申请号：US645330

申请日：1975-12-30

申请人： Takashi Matsuoka

发明人： Takashi Matsuoka

IPC分类号： C21D8/02 ,  C21D9/46 ,  C22C38/04 ,  C21D7/02 ,  C21D7/14

CPC分类号： C21D9/46 ,  C21D8/02 ,  C22C38/04 ,  C21D8/0226 ,  C21D8/0236 ,  C21D8/0273

摘要： Disclosed are a cold-rolled high strength steel sheet having excellent cold workability under the as-annealed condition which consists essentially of, by weight, 0.03 - 0.2% C, 0.6 - 1.5% Si, 1.3 - 3.0% Mn, 0.01 - 0.25% Nb or 0.01 - 0.2% Ti or 0.01 - 0.3% Nb plus Ti, and the remainder of Fe with inevitable amounts of impurities, and the method of making the same. The steel sheet can be as thin as 3mm or less while possessing a high tensile strength of 50 to 100 kg/mm.sup.2, and is extremely suitable for use as a constructional material of car bodies.

摘要翻译： 公开了一种在退火条件下具有优异的冷加工性的冷轧高强度钢板，其基本上由0.03-0.2％的C，0.6-1.5％的Si，1.3-3.0％的Mn，0.01-0.25％ Nb或0.01〜0.2％Ti或0.01〜0.3％Nb加Ti，余量为Fe，不可避免量的杂质及其制造方法。 钢板的厚度可以是3mm以下，同时具有50〜100kg / mm2的高抗拉强度，并且非常适用于车体的结构材料。