公开(公告)号：US08742353B2

公开(公告)日：2014-06-03

申请号：US12444209

申请日：2007-09-13

Applicant: Yoichi Kawada ,  Takashi Yasuda ,  Hironori Takahashi ,  Shinichiro Aoshima

Inventor： Yoichi Kawada ,  Takashi Yasuda ,  Hironori Takahashi ,  Shinichiro Aoshima

IPC: G01N21/35

CPC classification number: G01N21/35 ,  G01N21/23 ,  G01N21/3581

Abstract: A single terahertz wave time-waveform measuring device 1 acquires information on an object to be measured 9 by using a terahertz wave, and includes a light source 11, a beam diameter adjuster 12, a separator 13, a terahertz wave generator 21, a light path length difference adjuster 31, a pulse front tilting unit 32, a polarizer 33, a wave synthesizer 41, an electro-optic crystal 42, an analyzer 43, and a photodetector 44. The terahertz wave generator 21 generates a pulse terahertz wave in response to an input of pump light and outputs the pulse terahertz wave. The pulse front tilting unit 32 makes pulse fronts of the terahertz wave and the probe light when being input into the electro-optic crystal 42 nonparallel to each other by tilting the pulse front of the probe light.

Abstract translation: 单个太赫兹波时间波形测量装置1通过使用太赫兹波获取关于被测量物体9的信息，并且包括光源11，光束直径调节器12，隔膜13，太赫兹波发生器21，光 路径长度差调节器31，脉冲前倾斜单元32，偏振器33，波合成器41，电光晶体42，分析器43和光电检测器44.太赫兹波发生器21响应地产生脉冲太赫兹波 到泵浦光的输入并输出脉冲太赫兹波。 当脉冲前倾斜单元32通过倾斜探测光的脉冲前沿而彼此不平行地输入到电光晶体42中时，使太赫兹波和探测光的脉冲前沿。

公开(公告)号：US08606139B2

公开(公告)日：2013-12-10

申请号：US12878533

申请日：2010-09-09

Applicant: Fan Xu ,  Takashi Yasuda ,  Mitsuru Horinoe

Inventor： Fan Xu ,  Takashi Yasuda ,  Mitsuru Horinoe

IPC: G03G15/08

CPC classification number: G03G15/0817 ,  G03G15/0898

Abstract: A development device includes a casing storing development agent, a developing member that is rotatably supported in an opening of the casing and configured to hold development agent thereon, a first seal member that extends in a first direction parallel to a rotational axis of the developing member and has a base end at a side of the casing and a free end contacting an entire length, in the first direction, of the developing member, and an elastic member disposed between the casing and the free end so as to face the entire length, in the first direction, of the developing member. The elastic member presses the free end against the entire length, in the first direction, of the developing member.

Abstract translation: 显影装置包括容纳显影剂的壳体，可旋转地支撑在壳体的开口中并构造成在其上保持显影剂的显影构件，沿与平行于显影构件的旋转轴线的第一方向延伸的第一密封构件 并且在所述壳体的一侧具有基端，并且在所述显影构件的第一方向上的整个长度接触的自由端和设置在所述壳体和所述自由端之间以面对所述整个长度的弹性构件， 在第一方向上，显影构件。 弹性构件按照显影构件的第一方向的整个长度挤压自由端。

公开(公告)号：US08354644B2

公开(公告)日：2013-01-15

申请号：US12530897

申请日：2008-02-13

Applicant: Takashi Yasuda ,  Yoichi Kawada ,  Hironori Takahashi ,  Shinichiro Aoshima ,  Atsuko Aoshima

Inventor： Takashi Yasuda ,  Yoichi Kawada ,  Hironori Takahashi ,  Shinichiro Aoshima

IPC: G01J5/02

CPC classification number: G01N21/3581 ,  G01N21/552

Abstract: A total reflection terahertz wave measuring apparatus 1 is configured to acquire information on a subject S by a total reflection measurement method by use of a terahertz wave, and includes a light source 11, a branching part 12, a chopper 13, an optical path length difference adjusting part 14, a polarizer 15, a separator 17, a terahertz wave generating element 20, an internal total reflection prism 31, a terahertz wave detecting element 40, a ¼ wavelength plate 51, a polarization split element 52, a photodetector 53A, a photodetector 53B, a differential amplifier 54, and a lock-in amplifier 55. The internal total reflection prism 31 is a so-called aplanatic prism, and has an entrance plane 31a, an exit plane 31b, and a reflection plane 31c. The terahertz wave generating element 20 is provided to be integrated with the entrance plane 31a of the internal total reflection prism 31, and the terahertz wave detecting element 40 is provided to be integrated with the exit plane 31b of the internal total reflection prism 31.

Abstract translation: 全反射太赫波测量装置1被配置为通过使用太赫兹波的全反射测量方法获取关于被摄体S的信息，并且包括光源11，分支部12，斩波器13，光程长度 差分调整部14，偏振片15，隔膜17，太赫波生成元件20，内部全反射棱镜31，太赫兹波检测元件40，1/4波片51，偏振分离元件52，光电检测器53A， 光检测器53B，差分放大器54和锁定放大器55.内部全反射棱镜31是所谓的平行棱镜，具有入射面31a，出射面31b和反射面31c。 太赫波发生元件20设置成与内部全反射棱镜31的入射面31a一体化，并且太赫兹波检测元件40设置成与内部全反射棱镜31的出射面31b一体化。

公开(公告)号：US20120206924A1

公开(公告)日：2012-08-16

申请号：US13357889

申请日：2012-01-25

Applicant: Haruyasu Ito ,  Takashi Yasuda

Inventor： Haruyasu Ito ,  Takashi Yasuda

IPC: F21V5/04

CPC classification number: B23K26/0648 ,  B23K26/0665 ,  G02B27/0927 ,  G02B27/0955

Abstract: A laser light shaping optical system 1 in accordance with an embodiment of the present invention comprises an intensity conversion lens 11 for converging and shaping an intensity distribution of laser light incident thereon into a desirable intensity distribution; a phase correction lens 12 for correcting the laser light emitted from the intensity conversion lens 11 into a plane wave by homogenizing a phase thereof; and an expansion/reduction optical system 20, arranged between the intensity conversion lens 11 and the phase correction lens 12, for expanding or reducing the laser light emitted from the intensity conversion lens 11.

Abstract translation: 根据本发明的实施例的激光成形光学系统1包括：强度转换透镜11，用于将入射到其上的激光的强度分布会聚并成形为期望的强度分布; 相位校正透镜12，用于通过使其强度相位来校正从强度转换透镜11发射的激光到平面波; 以及布置在强度转换透镜11和相位校正透镜12之间的用于扩大或减小从强度转换透镜11发射的激光的扩展/缩小光学系统20。

公开(公告)号：US20110242642A1

公开(公告)日：2011-10-06

申请号：US13128988

申请日：2009-09-28

Applicant: Yoichi Kawada ,  Atsushi Nakanishi ,  Takashi Yasuda ,  Hironori Takahashi

Inventor： Yoichi Kawada ,  Atsushi Nakanishi ,  Takashi Yasuda ,  Hironori Takahashi

IPC: G02F1/35

CPC classification number: G02F1/3534 ,  G02F2001/3546 ,  G02F2203/13

Abstract: A terahertz wave generating apparatus 2 includes an excitation light source 10, a transmission-type diffraction grating 32, a variable imaging optical system 61, and a nonlinear optical crystal 70. The transmission-type diffraction grating 32 inputs pulsed excitation light output from the excitation light source 10, and diffracts and outputs the pulsed excitation light. In the transmission-type diffraction grating 32, its orientation is variable with a straight central axis, that is parallel to the grooves and passing through an incident position of a principal ray of the pulsed excitation light. The variable imaging optical system 61 is configured to input the pulsed excitation light diffracted to be output by the transmission-type diffraction grating 32, to form an image of the pulsed excitation light by the transmission-type diffraction grating 32, and its imaging magnification is variable. The nonlinear optical crystal 70 is disposed at a position at which the pulsed excitation light is formed as the image by the variable imaging optical system 61, and inputs the pulsed excitation light via the variable imaging optical system 61, and generates a terahertz wave T. Thereby, a terahertz wave generating apparatus, in which it is easy to adjust a phase matching condition, can be realized.

Abstract translation: 太赫波发生装置2包括激发光源10，透射型衍射光栅32，可变摄像光学系统61和非线性光学晶体70.透射型衍射光栅32输入从激发输出的脉冲激发光 光源10，衍射并输出脉冲激发光。 在透射型衍射光栅32中，其取向可以直线中心轴变化，平行于凹槽并通过脉冲激发光的主射线的入射位置。 可变成像光学系统61被配置为输入由透射型衍射光栅32衍射的被衍射的脉冲激发光，以通过透射型衍射光栅32形成脉冲激发光的图像，并且其成像倍率为 变量。 非线性光学晶体70被配置在通过可变成像光学系统61形成脉冲激发光作为图像的位置，并通过可变成像光学系统61输入脉冲激励光，并产生太赫兹波T. 由此，能够实现容易调整相位匹配条件的太赫兹波发生装置。

公开(公告)号：US20100092206A1

公开(公告)日：2010-04-15

申请号：US12576685

申请日：2009-10-09

Applicant: Yuichi Matsushita ,  Fan Xu ,  Mitsuru Horinoe ,  Takashi Yasuda

Inventor： Yuichi Matsushita ,  Fan Xu ,  Mitsuru Horinoe ,  Takashi Yasuda

IPC: G03G15/08

CPC classification number: G03G15/0817 ,  G03G15/0884 ,  G03G15/0898

Abstract: A developing device includes a developer carrier which carries a developer, a developing unit housing which rotatably supports the developer carrier, a side seal member which comes into slidable contact with both ends of the developer carrier, a sheet-like elongated seal member which extends in the axial direction of the developer carrier so as to come into slidable contact with the developer carrier, a side seal attachment surface which is formed in the developing unit housing and to which the side seal member is attached, and a support portion which is formed in the developing unit housing and protrudes toward the developer carrier from the side seal attachment surface to support the elongated seal member. The elongated seal member is attached onto the support portion in a state where both ends thereof overlap the side seal member and are opposite the side seal attachment surface. A filler is filled in a gap surrounded by the elongated seal member, the side seal member, the support portion, and the side seal attachment surface. A protrusion for suppressing the spread of the filler is formed at the side seal attachment surface at a predetermined interval from the support portion.

Abstract translation: 显影装置包括承载显影剂的显影剂载体，可旋转地支撑显影剂载体的显影单元壳体，与显影剂载体的两端可滑动接触的侧密封构件，延伸在显影剂载体上的片状细长密封构件 显影剂载体的轴向方向与显影剂载体滑动接触，形成在显影单元壳体中并且安装有侧密封构件的侧密封附接表面和形成在显影剂载体中的支撑部分 显影单元容纳并从侧密封附接表面朝向显影剂载体突出以支撑细长密封构件。 细长密封构件在其两端与侧密封构件重叠并且与侧密封件附接表面相对的状态下附接到支撑部上。 填充物填充在由细长密封构件，侧密封构件，支撑部和侧密封附接表面包围的间隙中。 用于抑制填料扩散的突起形成在侧面密封附着表面上与支撑部分隔开预定间隔。

公开(公告)号：US20100091266A1

公开(公告)日：2010-04-15

申请号：US12530897

申请日：2008-02-13

Applicant: Takashi Yasuda ,  Yoichi Kawada ,  Hironori Takahashi ,  Shinichiro Aoshima

Inventor： Takashi Yasuda ,  Yoichi Kawada ,  Hironori Takahashi ,  Shinichiro Aoshima

IPC: G01N21/35 ,  G01J5/00 ,  G01N21/55

CPC classification number: G01N21/3581 ,  G01N21/552

Abstract: A total reflection terahertz wave measuring apparatus 1 is configured to acquire information on a subject S by a total reflection measurement method by use of a terahertz wave, and includes a light source 11, a branching part 12, a chopper 13, an optical path length difference adjusting part 14, a polarizer 15, a separator 17, a terahertz wave generating element 20, an internal total reflection prism 31, a terahertz wave detecting element 40, a ¼ wavelength plate 51, a polarization split element 52, a photodetector 53A, a photodetector 53B, a differential amplifier 54, and a lock-in amplifier 55. The internal total reflection prism 31 is a so-called aplanatic prism, and has an entrance plane 31a, an exit plane 31b, and a reflection plane 31c. The terahertz wave generating element 20 is provided to be integrated with the entrance plane 31a of the internal total reflection prism 31, and the terahertz wave detecting element 40 is provided to be integrated with the exit plane 31b of the internal total reflection prism 31.

Abstract translation: 全反射太赫波测量装置1被配置为通过使用太赫兹波的全反射测量方法获取关于被摄体S的信息，并且包括光源11，分支部12，斩波器13，光程长度 差分调整部14，偏振片15，隔膜17，太赫波生成元件20，内部全反射棱镜31，太赫兹波检测元件40，1/4波片51，偏振分离元件52，光电检测器53A， 光检测器53B，差分放大器54和锁定放大器55.内部全反射棱镜31是所谓的平行棱镜，具有入射面31a，出射面31b和反射面31c。 太赫波发生元件20设置成与内部全反射棱镜31的入射面31a一体化，并且太赫兹波检测元件40设置成与内部全反射棱镜31的出射面31b一体化。

公开(公告)号：US20100014652A1

公开(公告)日：2010-01-21

申请号：US12568247

申请日：2009-09-28

Applicant: Takashi Yasuda

Inventor： Takashi Yasuda

IPC: H04M3/00

CPC classification number: H04W4/08 ,  H04M3/36 ,  H04M3/38 ,  H04M2201/12 ,  H04M2201/14 ,  H04M2203/2044 ,  H04M2242/04 ,  H04W8/186 ,  H04W48/06

Abstract: Restriction on call connections is controlled by grouping a plurality of terminals. One or more groups each including one or more terminals are provided. Each of the one or more groups is associated with the maximum number of calling terminals and a group restriction relaxing ratio indicating a relaxing degree of restriction with respect to a predetermined normal restriction ratio. Restriction on a call connection of a terminal belonging to a group is controlled on the basis of a group restriction ratio assigned to the group when the number of terminals being making phone calls is less than the maximum number of calling terminals that is provided for the group. The group restriction ratio is calculated using the predetermined normal restriction ratio and the group restriction relaxing ratio associated with the group.

Abstract translation: 通过对多个终端进行分组来控制呼叫连接的限制。 提供一个或多个包括一个或多个终端的组。 一个或多个组中的每一个与呼叫终端的最大数目相关联，以及指示关于预定的正常限制比率的松弛度限制的组限制松弛比。 当进行电话呼叫的终端的数量小于为该组提供的最大呼叫终端数量时，基于分配给组的组限制比例来控制属于组的终端的呼叫连接的限制 。 使用与组相关联的预定正常限制比和组限制松弛率计算组限制比。

公开(公告)号：US20060133235A1

公开(公告)日：2006-06-22

申请号：US11312632

申请日：2005-12-21

Applicant: Takashi Yasuda ,  Yutaka Kamimori

Inventor： Takashi Yasuda ,  Yutaka Kamimori

IPC: G11B7/00

CPC classification number: G11B7/1263 ,  G11B2007/0006

Abstract: An optical disc apparatus includes: a pickup head including light sources for irradiating laser beams onto each of the two types of optical discs set in the unit main body and photodetectors for detecting the reflected light amount from the optical disc; and a control unit for permitting one light source of the pickup head to irradiate light source and inhibiting the other light source of the pickup head from irradiating light source in accordance with the type of an optical disc set in the unit main body, wherein the pickup head has a monitoring photodetector for detecting the light amount of laser beams irradiated from the each light source and a monitoring output selector for selectively inputting the output of the monitoring photodetector to the control unit.

Abstract translation: 一种光盘装置，包括：拾取头，包括用于将激光束照射到设置在单元主体中的两种类型的光盘中的每一个上的光源和用于检测来自光盘的反射光量的光电检测器; 以及控制单元，用于允许拾取头的一个光源照射光源并且根据设置在单元主体中的光盘的类型来抑制拾取头的另一个光源照射光源，其中拾取头 头具有用于检测从每个光源照射的激光束的光量的监视光电检测器和用于选择性地将监视光电检测器的输出输入到控制单元的监视输出选择器。

公开(公告)号：US6057561A

公开(公告)日：2000-05-02

申请号：US32025

申请日：1998-02-27

Applicant: Masashi Kawasaki ,  Hideomi Koinuma ,  Akira Ohtomo ,  Yusaburo Segawa ,  Takashi Yasuda

Inventor： Masashi Kawasaki ,  Hideomi Koinuma ,  Akira Ohtomo ,  Yusaburo Segawa ,  Takashi Yasuda

IPC: H01L33/28 ,  G09G3/00 ,  H01L33/00 ,  H01L33/50 ,  H01S3/16 ,  H01S5/02 ,  H01S5/04 ,  H01S5/32 ,  H01S5/323 ,  H01S5/327

CPC classification number: H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01L33/50 ,  H01S2304/02 ,  H01S5/0213 ,  H01S5/041 ,  H01S5/32308

Abstract: A ZnO thin film is fabricated on the c-surface of a sapphire substrate through use of a laser molecular beam epitaxy (MBE) method-which is effective for epitaxial growth of an oxide thin film through control at an atomic level. The thus-formed ZnO thin film has a considerably high crystallinity; the half width of an X-ray rocking curve was 0.06.degree.. The thin film is of an n-type and has a carrier density of 4.times.10.sup.17 /cm.sup.3. The thin film fabricated in a state in which oxygen partial pressure is held constant at 10.sup.-6 Torr has a structure in which hexagon-shaped nanocrystals of uniform size are close-packed, reflecting the crystal behavior of a wurtzite type. Since in each nanocrystal there is observed a spiral structure formed by steps of a unit cell height (0.5 nm), the nanocrystals are considered to grow in a thermodynamically equilibrated state. The lateral size of the nanocrystal can be controlled within the range of approximately 50 to 250 nm. A II-oxide optical semiconductor element utilizes a zinc oxide thin film containing magnesium or cadmium in a solid-solution state. Through addition of magnesium or cadmium, the band gap of zinc oxide can be controlled within the range of 3 to 4 eV.

Abstract translation: 通过使用激光分子束外延（MBE）法在蓝宝石衬底的c面上制造ZnO薄膜，其通过原子级的控制对氧化物薄膜进行外延生长是有效的。 由此形成的ZnO薄膜具有相当高的结晶度; X射线摇摆曲线的半宽度为0.06°。 薄膜为n型，载流子密度为4×10 17 / cm 3。 在氧分压保持恒定在10 -6乇的状态下制造的薄膜具有均匀尺寸的六角形纳米晶体紧密堆积的结构，反映了纤锌矿型的晶体特性。 由于在每个纳米晶体中观察到由单元高度（0.5nm）的步骤形成的螺旋结构，所以认为纳米晶体在热力学平衡状态下生长。 纳米晶体的横向尺寸可以控制在约50至250nm的范围内。 II型氧化物光半导体元件利用含有固溶体状态的镁或镉的氧化锌薄膜。 通过添加镁或镉，氧化锌的带隙可以控制在3至4eV的范围内。