公开(公告)号：US20070008658A1

公开(公告)日：2007-01-11

申请号：US11521342

申请日：2006-09-15

申请人： Kazuki Sato ,  Takeo Kagami

发明人： Kazuki Sato ,  Takeo Kagami

IPC分类号： G11B5/33 ,  G11B5/187

CPC分类号： G11B5/3906 ,  Y10T29/49025 ,  Y10T29/49027 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： The method of making a thin-film magnetic head in accordance with the present invention forms a cover layer on an insulating layer about a magnetoresistive film so as to eliminate a protrusion riding on the magnetoresistive film. Then, the protrusion can be eliminated by etching. The part of insulating layer clad with the cover layer is not etched. This can prevent short-circuit from occurring because of thinning the insulating layer.

摘要翻译： 根据本发明的制造薄膜磁头的方法在围绕磁阻膜的绝缘层上形成覆盖层，以消除骑在磁阻膜上的突起。 然后，可以通过蚀刻来消除突起。 覆盖层的绝缘层的一部分未被蚀刻。 这可以防止由于绝缘层变薄而发生短路。

公开(公告)号：US07134183B2

公开(公告)日：2006-11-14

申请号：US10703438

申请日：2003-11-10

申请人： Kazuki Sato ,  Takeo Kagami

发明人： Kazuki Sato ,  Takeo Kagami

IPC分类号： G11B5/127 ,  C23C14/00 ,  B44C1/22

CPC分类号： G11B5/3906 ,  Y10T29/49025 ,  Y10T29/49027 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： The method of making a thin-film magnetic head in accordance with the present invention forms a cover layer on an insulating layer about a magnetoresistive film so as to eliminate a protrusion riding on the magnetoresistive film. Then, the protrusion can be eliminated by etching. The part of insulating layer clad with the cover layer is not etched. This can prevent short-circuit from occurring because of thinning the insulating layer.

摘要翻译： 根据本发明的制造薄膜磁头的方法在围绕磁阻膜的绝缘层上形成覆盖层，以消除骑在磁阻膜上的突起。 然后，可以通过蚀刻来消除突起。 覆盖层的绝缘层的一部分未被蚀刻。 这可以防止由于绝缘层变薄而发生短路。

公开(公告)号：US08427790B2

公开(公告)日：2013-04-23

申请号：US12216162

申请日：2008-06-30

申请人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

发明人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3932

摘要： A thin film magnetic head includes a magnetoresistive element having a recording-medium-facing-surface which is to be faced with a magnetic recording medium; a magnetic bias layer located on a side opposite to the recording-medium-facing-surface of the magnetoresistive element, and applying a bias magnetic field to the magnetoresistive element in a direction orthogonal to the recording-medium-facing-surface; and a resistive film pattern having the recording-medium-facing-surface, the resistive film pattern being located side by side with the magnetoresistive element in a track-width direction.

摘要翻译： 薄膜磁头包括具有面向磁记录介质的记录介质面对表面的磁阻元件; 位于与所述磁阻元件的记录介质相对表面相对的一侧的磁偏置层，并且在与所述记录介质相对表面正交的方向上向所述磁阻元件施加偏置磁场; 以及具有记录介质面向表面的电阻膜图案，电阻膜图案与磁阻元件沿轨道宽度方向并排定位。

公开(公告)号：US08085038B2

公开(公告)日：2011-12-27

申请号：US11753836

申请日：2007-05-25

申请人： Takumi Uesugi ,  Takeo Kagami ,  Tetsuro Sasaki ,  Kei Hirata ,  Masaru Hirose ,  Chi Man Lee ,  Kwok Piu Tso

发明人： Takumi Uesugi ,  Takeo Kagami ,  Tetsuro Sasaki ,  Kei Hirata ,  Masaru Hirose ,  Chi Man Lee ,  Kwok Piu Tso

IPC分类号： G01R33/12 ,  G11B5/00

CPC分类号： G11B5/455 ,  G11B5/3189 ,  G11B5/3903

摘要： A noise-testing method for a thin-film magnetic head with an MR read head element and a heating unit capable of applying a heat and a stress to the MR read head element, includes a step of applying alternately and discontinuously with each other an electrical power having a first level and an electrical power having a second level higher than the first level to the heating unit, and a step of evaluating the thin-film magnetic head by measuring a noise output or noise outputs obtained from the MR read head element when the electrical power or the electrical powers are applied to the heating unit.

摘要翻译： 具有MR读取头元件的薄膜磁头和能够向MR读取头元件施加热和应力的加热单元的噪声测试方法包括以下步骤：交替地和不连续地施加电气 具有第一电平的功率和具有比加热单元的第一电平高的第二电平的电力;以及通过测量从MR读取头元件获得的噪声输出或噪声输出来评估薄膜磁头的步骤， 电力或电力被施加到加热单元。

公开(公告)号：US20110310510A1

公开(公告)日：2011-12-22

申请号：US12819552

申请日：2010-06-21

申请人： Kenkichi ANAGAWA ,  Katsuki Kurihara ,  Takeo Kagami ,  Kei Hirata ,  Minoru Ota

发明人： Kenkichi ANAGAWA ,  Katsuki Kurihara ,  Takeo Kagami ,  Kei Hirata ,  Minoru Ota

IPC分类号： G11B5/10

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/235 ,  G11B5/315

摘要： A main magnetic-pole layer is provided with, at the tip end portion thereof, a trailing shied on the trailing side via a non-magnetic gap layer, and the non-magnetic gap layer includes therein one or more magnetic layers. This magnetic layer appropriately controls the amount of magnetic fluxes coming from the tip end portion of the main magnetic-pole layer for capturing into the trailing shield because the magnetic fluxes coming from the tip end portion of the main magnetic-pole layer go through the magnetic layer before being captured into the trailing shield.

摘要翻译： 主磁极层在其末端部分经由非磁隙层在后侧设置有尾部，非磁性间隙层包括一个或多个磁性层。 该磁性层适当地控制来自主磁极层的前端部分的磁通量，用于捕获到后屏蔽件中，因为来自主磁极层的末端部分的磁通量通过磁 在被捕获到后盾之前。

公开(公告)号：US07950135B2

公开(公告)日：2011-05-31

申请号：US11806518

申请日：2007-05-31

申请人： Takeo Kagami ,  Takayasu Kanaya

发明人： Takeo Kagami ,  Takayasu Kanaya

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3967 ,  Y10T29/49037 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered structure with side surfaces substantially perpendicular to the layer lamination plane, a step of forming a first insulation layer on at least the side surfaces of the formed MR multi-layered structure, a step of forming a second insulation layer and a magnetic domain control bias layer on the lower electrode layer, and a step of forming an upper electrode layer on the MR multi-layered structure and the magnetic domain control bias layer.

摘要翻译： 电流在垂直于层平面的方向流动的MR元件的制造方法包括在下电极层上形成具有基本上垂直于层叠平面的侧表面的MR多层结构的步骤，形成 在形成的MR多层结构的至少侧面上的第一绝缘层，在下电极层上形成第二绝缘层和磁畴控制偏置层的步骤，以及形成上电极层的步骤 MR多层结构和磁畴控制偏置层。

公开(公告)号：US07768747B2

公开(公告)日：2010-08-03

申请号：US11735730

申请日：2007-04-16

申请人： Takeo Kagami ,  Takayasu Kanaya

发明人： Takeo Kagami ,  Takayasu Kanaya

IPC分类号： G11B5/33 ,  G11B5/127 ,  H04R31/00

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/11 ,  G11B5/3163 ,  G11B5/3912 ,  Y10T29/49046

摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, and an upper magnetic shield layer formed on the MR multi-layered structure. The lower magnetic shield layer consists of a first soft magnetic layer and a second soft magnetic layer laminated on and magnetically connected with the first soft magnetic layer. A part of an upper surface of the first soft magnetic layer outside both side ends in a track-width direction of the MR multi-layered structure is located lower in height than an upper surface within a region where the MR multi-layered structure is formed, of the lower magnetic shield layer. The second soft magnetic layer is formed outside both side ends in a track-width direction of the MR multi-layered structure.

摘要翻译： 薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流在垂直于层压层表面的方向上流动，并且形成在MR上的上磁屏蔽层 多层结构。 下磁屏蔽层由层压在第一软磁层上并与第一软磁层磁连接的第一软磁层和第二软磁层组成。 在MR多层结构的轨道宽度方向上的两侧端部外侧的第一软磁性层的上表面的一部分位于比形成有MR多层结构的区域内的上表面的高度 的下磁屏蔽层。 第二软磁性层形成在MR多层结构的轨道宽度方向的两侧端的外侧。

公开(公告)号：US20090213501A1

公开(公告)日：2009-08-27

申请号：US12427314

申请日：2009-04-21

申请人： Takeo Kagami ,  Noriaki Kasahara ,  Tetsuya Kuwshima

发明人： Takeo Kagami ,  Noriaki Kasahara ,  Tetsuya Kuwshima

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996

摘要： A composite thin-film magnetic head includes a substrate; a first insulation layer laminated on the substrate; an MR read head element formed on the first insulation layer and provided with a lower shield layer, an upper shield layer and an MR layer in which a sense current flows in a direction perpendicular to a surface of the MR layer through the upper shield layer and the lower shield layer; a second insulation layer laminated on the MR read head element; an inductive write head element formed on the second insulation layer and provided with a lower magnetic pole layer, a recording gap layer, an upper magnetic pole layer whose end portion is opposed to an end portion of the lower magnetic pole layer through the recording gap layer and a write coil; and a nonmagnetic conductive layer electrically conducted with the lower shield layer and opposed to the substrate in order to increase substantially countered area between the lower shield layer and the substrate.

摘要翻译： 复合薄膜磁头包括基板; 层叠在所述基板上的第一绝缘层; 形成在第一绝缘层上并具有下屏蔽层，上屏蔽层和MR层的MR读头元件，其中感测电流通过上屏蔽层沿垂直于MR层的表面的方向流动， 下屏蔽层; 层叠在MR读取头元件上的第二绝缘层; 形成在第二绝缘层上并具有下磁极层的感应写头元件，记录间隙层，其上端部通过记录间隙层与下磁极层的端部相对的上磁极层 和一个写入线圈; 以及与下屏蔽层电连接并与基板相对的非磁性导电层，以便增加下屏蔽层和基板之间的基本上反向的面积。

公开(公告)号：US20070289122A1

公开(公告)日：2007-12-20

申请号：US11806518

申请日：2007-05-31

申请人： Takeo Kagami ,  Takayasu Kanaya

发明人： Takeo Kagami ,  Takayasu Kanaya

IPC分类号： G11B5/187

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3967 ,  Y10T29/49037 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered structure with side surfaces substantially perpendicular to the layer lamination plane, a step of forming a first insulation layer on at least the side surfaces of the formed MR multi-layered structure, a step of forming a second insulation layer and a magnetic domain control bias layer on the lower electrode layer, and a step of forming an upper electrode layer on the MR multi-layered structure and the magnetic domain control bias layer.

摘要翻译： 电流在垂直于层平面的方向流动的MR元件的制造方法包括在下电极层上形成具有基本上垂直于层叠平面的侧表面的MR多层结构的步骤，形成 在形成的MR多层结构的至少侧面上的第一绝缘层，在下电极层上形成第二绝缘层和磁畴控制偏置层的步骤，以及形成上电极层的步骤 MR多层结构和磁畴控制偏置层。

公开(公告)号：US20070035886A1

公开(公告)日：2007-02-15

申请号：US11500311

申请日：2006-08-08

申请人： Takeo Kagami ,  Naoki Ohta ,  Kazuki Sato ,  Satoshi Miura

发明人： Takeo Kagami ,  Naoki Ohta ,  Kazuki Sato ,  Satoshi Miura

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/112 ,  G11B5/3912 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49044

摘要： A tunneling magneto-resistive element includes: a tunneling magneto-resistive film including an antiferromagnetic layer, a pinned layer, a barrier layer and a free layer; and a lower magnetic shielding film disposed below the tunneling magneto-resistive film with respect to a lamination direction. The barrier layer is constituted of magnesium oxide. The lower magnetic shielding film has a multi-layer structure including a crystalline layer and an amorphous layer disposed above the crystalline layer with respect to the lamination direction. The crystalline layer contains at least one crystal grain having a grain size of 500 nm or more.

摘要翻译： 隧道磁阻元件包括：包括反铁磁层，钉扎层，阻挡层和自由层的隧道磁阻膜; 以及相对于层叠方向设置在隧道磁阻膜下方的下磁屏蔽膜。 阻挡层由氧化镁构成。 下磁屏蔽膜具有多层结构，其包括结晶层和相对于层叠方向设置在结晶层上方的非晶层。 结晶层含有至少一种晶粒尺寸为500nm以上的晶粒。