公开(公告)号：US20130020880A1

公开(公告)日：2013-01-24

申请号：US13541827

申请日：2012-07-05

申请人： Kengo ASAI ,  Atsushi Isobe ,  Kenichi Osada ,  Yasushi Goto ,  Hideaki Takano

发明人： Kengo ASAI ,  Atsushi Isobe ,  Kenichi Osada ,  Yasushi Goto ,  Hideaki Takano

IPC分类号： H02M3/06

CPC分类号： H02J7/34 ,  H01G5/38 ,  H01G5/40 ,  H01H59/0009

摘要： An energy storage circuit includes a first capacitor connected with a power generating element via a first diode and a second capacitor connected with the power generating element via a second diode and a switch. The conduction state of the switch is controlled using the potential difference between its second and third electrodes (driving voltage V). The driving voltage when the switch enters its conductive state is higher than the driving voltage when the switch enters its non-conductive state.

摘要翻译： 能量存储电路包括经由第一二极管与发电元件连接的第一电容器和经由第二二极管和开关与发电元件连接的第二电容器。 使用其第二和第三电极之间的电位差（驱动电压V）来控制开关的导通状态。 当开关进入其导通状态时的驱动电压高于开关进入非导通状态时的驱动电压。

公开(公告)号：US08044703B2

公开(公告)日：2011-10-25

申请号：US12109091

申请日：2008-04-24

申请人： Hiroaki Kenjyo ,  Tadashi Miyazaki ,  Yasushi Goto ,  Naotaka Oda ,  Toshifumi Sato

发明人： Hiroaki Kenjyo ,  Tadashi Miyazaki ,  Yasushi Goto ,  Naotaka Oda ,  Toshifumi Sato

IPC分类号： G06F11/16

CPC分类号： G06F11/183

摘要： Each of APRM units equipped for each of the diversity channels has printed circuit boards having circuit patterns thereon and a circuit description elements installed on the printed circuit board. The circuit description elements are FPGA elements manufactured by mutually different providers for example and implemented an electric circuit described in a hardware description language by a configuration tool. The circuit description elements can be implemented mutually different descriptions of the electric circuit, or can be implemented the electric circuit by mutually different configuration tools. Also, the printed circuit boards for the diversity channels can be different from each other.

摘要翻译： 为每个分集通道配备的每个APRM单元具有其上具有电路图案的印刷电路板和安装在印刷电路板上的电路描述元件。 电路描述元件是由相互不同的提供商制造的FPGA元件，并且通过配置工具实现了以硬件描述语言描述的电路。 电路描述元件可以实现相互不同的电路描述，或者可以通过相互不同的配置工具来实现电路。 此外，用于分集通道的印刷电路板可以彼此不同。

公开(公告)号：US07451656B2

公开(公告)日：2008-11-18

申请号：US11878243

申请日：2007-07-23

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00 ,  G01L9/16

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

公开(公告)号：US20070262401A1

公开(公告)日：2007-11-15

申请号：US11878243

申请日：2007-07-23

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： H01L29/84

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

公开(公告)号：US07259104B2

公开(公告)日：2007-08-21

申请号：US10671608

申请日：2003-09-29

申请人： Tetsuo Ono ,  Takafumi Tokunaga ,  Tadashi Umezawa ,  Motohiko Yoshigai ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takashi Sato ,  Yasushi Goto

发明人： Tetsuo Ono ,  Takafumi Tokunaga ,  Tadashi Umezawa ,  Motohiko Yoshigai ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takashi Sato ,  Yasushi Goto

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01J37/32082 ,  H01L21/32136 ,  H01L21/32139

摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.

摘要翻译： 具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤： 在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压， 以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

公开(公告)号：US20070102831A1

公开(公告)日：2007-05-10

申请号：US10583862

申请日：2003-12-24

申请人： Shuntaro Machida ,  Natsuki Yokoyama ,  Yasushi Goto

发明人： Shuntaro Machida ,  Natsuki Yokoyama ,  Yasushi Goto

IPC分类号： H01L21/66 ,  H01L23/28

CPC分类号： H01L21/78 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention has a object to enhance the yield and facilitate bonding in a device provided with micro-mechanical elements formed by a MEMS technique. According to the inveniton, when a first wafer having a plurality of areas in which micro-mechanical elements and pads are formed and a second wafer in which an aperture is formed are to be glued together, the aperture is shared by the pads in the plurality of areas. This makes it possible for individual chips, into which the wafer is cut out, to be bonded with a conventionally used wire bonder because a sufficient aperture is provided above the pads. Further according to the invention, at the step of dicing two glued wafers into individual chips, the two wafers are separately cut. This enables chipping of the wafers to be reduced and the yield at the dicing step to be enhanced.

摘要翻译： 本发明的目的是提高在通过MEMS技术形成的微机械元件的装置中的产量和促进结合。 根据本发明，当具有其中形成有微机械元件和焊盘的多个区域的第一晶片和其中形成有孔的第二晶片将被胶合在一起时，该孔由多个焊盘共享 的地区。 这使得可以用常规使用的引线接合器将切割出晶片的各个芯片结合，因为在焊盘上方设置足够的孔。 此外，根据本发明，在将两个胶合晶片切割成单个芯片的步骤中，两个晶片被分开切割。 这样可以削减晶片的碎裂并提高切割步骤的成品率。

公开(公告)号：US20070018761A1

公开(公告)日：2007-01-25

申请号：US11472355

申请日：2006-06-22

申请人： Kiyoko Yamanaka ,  Yasushi Goto

发明人： Kiyoko Yamanaka ,  Yasushi Goto

IPC分类号： H01H51/22

CPC分类号： H01H1/0036 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0735 ,  H01H59/0009

摘要： It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contact 2 opposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.

摘要翻译： 实现可以安装有CMOS电路并具有机械和电气的高可靠性的接触点的MEMS开关的目的。 在构成MEMS开关的悬臂梁和与其相对的固定触头2的接触表面处形成具有与CMOS工艺兼容的绝缘体。 当使用开关时，通过向拉入电极和悬臂梁施加电压来移动悬臂梁。 在悬臂梁与固定触点接触之后，超过绝缘体击穿场强的电压被施加到绝缘体上，导致电介质击穿。 通过改变绝缘体一次，保护开关接触点的机械疲劳浓度点，并且实现接触点，其中电信号通过由电介质击穿形成的电流路径传输。

公开(公告)号：US20060114114A1

公开(公告)日：2006-06-01

申请号：US11181928

申请日：2005-07-15

申请人： Sadaki Nakano ,  Koichi Yokosawa ,  Yasushi Goto

发明人： Sadaki Nakano ,  Koichi Yokosawa ,  Yasushi Goto

IPC分类号： G08B17/10 ,  H04L12/26 ,  G08B1/08 ,  G08B21/00

CPC分类号： G08B25/08 ,  G08B21/16 ,  G08B21/182 ,  G08B25/007 ,  G08B25/10

摘要： In a hydrogen gas station where a great number of sensors are installed, in case hydrogen leakage occurs, sensors in the vicinity of the leakage location start to transmit warning to an access point all at once. This causes channel capacity saturation and failure to transmit warning to the access point. Nodes and the access point are connected each other by an uplink channel and a downlink channel. The access point detects congested/uncongested status of the uplink channel by using a wireless transmitter module and notifies the nodes of the congested/uncongested status of the channel by means for transmitting onto the downlink channel. Meanwhile, each node controls its transmission operation, according to the hydrogen concentration level detected by its hydrogen sensor and the uplink channel congested/uncongested status notified from the access point. In this way, channel overflow due to access congestion in case of hydrogen leakage can be prevented.

摘要翻译： 在安装了大量传感器的氢气站中，在发生氢泄漏的情况下，泄漏位置附近的传感器开始一次性向接入点发送警告。 这导致通道容量饱和，并且无法向接入点发送警告。 节点和接入点通过上行链路信道和下行链路信道相互连接。 接入点通过使用无线发射机模块来检测上行链路信道的拥塞/非占用状态，并通过传输到下行链路信道的方式向节点通知信道的拥塞/非占用状态。 同时，每个节点根据其氢传感器检测到的氢浓度水平和从接入点通知的上行链路信道拥塞/非占用状态来控制其传输操作。 以这种方式，可以防止在泄漏的情况下由于访问拥塞而导致的信道溢出。

公开(公告)号：US20050250198A1

公开(公告)日：2005-11-10

申请号：US11007366

申请日：2004-12-09

申请人： Toru Fujimura ,  Yasushi Goto

发明人： Toru Fujimura ,  Yasushi Goto

IPC分类号： G01N33/53 ,  G01N21/45 ,  G01N33/543 ,  G01N33/566 ,  C12M1/34

CPC分类号： G01N33/54373 ,  G01N21/55

摘要： A simple and convenient sensor and measuring apparatus utilizing the optical interference effect of an optical thin film capable of measuring the binding between biochemical substances at a high throughput and having alkali resistance. An optical thin film of silicon nitride is disposed on the first surface and the rear surface of a silicon substrate, and the thickness of the silicon nitride film is modified in a direction parallel to the film. A portion of the thin film with increased thickness is used as a sensor upon which a probe is disposed, and over which a sample-containing solution is caused to flow. The binding between the probe and biochemical sample is detected based upon the change of the intensity of reflected light.

摘要翻译： 一种简单方便的传感器和测量装置，利用光学薄膜的光学干涉效应，能够以高通量测量生化物质之间的结合并具有耐碱性。 氮化硅的光学薄膜设置在硅衬底的第一表面和后表面上，并且氮化硅膜的厚度在与膜平行的方向上被改变。 使用具有增加厚度的薄膜的一部分用作传感器，在其上设置探针，并使含有样品的溶液流过。 基于反射光强度的变化来检测探针和生化样品之间的结合。

公开(公告)号：US06456681B1

公开(公告)日：2002-09-24

申请号：US09386142

申请日：1999-08-31

申请人： Yasushi Goto ,  Nobuaki Oono ,  Yuki Narawa ,  Teruji Tarumi ,  Koji Hirukawa

发明人： Yasushi Goto ,  Nobuaki Oono ,  Yuki Narawa ,  Teruji Tarumi ,  Koji Hirukawa

IPC分类号： C21C17108

CPC分类号： G21C17/108 ,  G21Y2002/201 ,  G21Y2002/301 ,  G21Y2004/30 ,  G21Y2004/305 ,  G21Y2004/40

摘要： A neutron flux measuring apparatus, adapted to a boiling-water reactor (BWR) of a nuclear power plant and an advanced boiling-water reactor (ABWR) of a nuclear power plant, for measuring a neutron flux in a reactor pressure vessel, comprises a neutron flux detector assembly incorporating a local power range monitor detector assembly and a start-up range neutron monitor detector, a preamplifier amplifying a detector signal obtained from said start-up range neutron monitor detector, a start-up range neutron monitor operation unit operating, indicating and monitoring the amplified signal of the start-up range neutron monitor detector, and a local power range monitor operation unit operating, indicating and monitoring a signal obtained from the local power range monitor detector.

摘要翻译： 适用于核电厂的沸水反应堆（BWR）和用于测量反应堆压力容器中的中子通量的核电站的先进沸水反应堆（ABWR）的中子流量测量装置包括： 中子通量检测器组件，其包括局部功率范围监视器检测器组件和启动范围中子监视器检测器，放大从所述启动范围中子监视器检测器获得的检测器信号的前置放大器，启动范围中子监视器操作单元， 指示和监视启动范围中子监视器检测器的放大信号;以及本地功率范围监视器操作单元，其操作，指示和监视从本地功率范围监视器检测器获得的信号。