公开(公告)号：US07270012B2

公开(公告)日：2007-09-18

申请号：US11237897

申请日：2005-09-29

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

公开(公告)号：US07045843B2

公开(公告)日：2006-05-16

申请号：US10788369

申请日：2004-03-01

申请人： Yasushi Goto ,  Shuntaro Machida ,  Natsuki Yokoyama

发明人： Yasushi Goto ,  Shuntaro Machida ,  Natsuki Yokoyama

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01H59/0009 ,  H01H2001/0042 ,  H01H2001/0063

摘要： Disclosed herein is a latchable MEMS switch device capable of retaining its ON or OFF state even after the external power source is turned off. It is unnecessary not only to introduce novel materials such as magnetic material but also to form complicated structures. At least one of the cantilever and pull-down electrode of a cold switch is connected to a second MEMS switch. A capacitor between the cantilever and pull-down electrode of the cold switch is charged by the second MEMS switch. Thereafter since the cold switch is isolated in the device, the charge remains stored. Therefore, the cold switch can remain in the ON state since the charge continues to create electrostatic attraction between the cantilever and the pull-down electrode.

摘要翻译： 这里公开了即使在外部电源关闭之后也能够保持其接通或关断状态的可闭锁的MEMS开关装置。 不仅不需要引入诸如磁性材料的新型材料，而且形成复杂的结构。 冷开关的悬臂和下拉电极中的至少一个连接到第二MEMS开关。 冷开关的悬臂和下拉电极之间的电容器由第二MEMS开关充电。 此后，由于冷开关在器件中隔离，所以电荷保持存储。 因此，由于电荷继续在悬臂与下拉电极之间产生静电引力，所以冷开关可以保持在导通状态。

公开(公告)号：US20060070449A1

公开(公告)日：2006-04-06

申请号：US11237897

申请日：2005-09-29

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

公开(公告)号：US07451656B2

公开(公告)日：2008-11-18

申请号：US11878243

申请日：2007-07-23

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00 ,  G01L9/16

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

公开(公告)号：US20070262401A1

公开(公告)日：2007-11-15

申请号：US11878243

申请日：2007-07-23

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： H01L29/84

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

公开(公告)号：US20070102831A1

公开(公告)日：2007-05-10

申请号：US10583862

申请日：2003-12-24

申请人： Shuntaro Machida ,  Natsuki Yokoyama ,  Yasushi Goto

发明人： Shuntaro Machida ,  Natsuki Yokoyama ,  Yasushi Goto

IPC分类号： H01L21/66 ,  H01L23/28

CPC分类号： H01L21/78 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention has a object to enhance the yield and facilitate bonding in a device provided with micro-mechanical elements formed by a MEMS technique. According to the inveniton, when a first wafer having a plurality of areas in which micro-mechanical elements and pads are formed and a second wafer in which an aperture is formed are to be glued together, the aperture is shared by the pads in the plurality of areas. This makes it possible for individual chips, into which the wafer is cut out, to be bonded with a conventionally used wire bonder because a sufficient aperture is provided above the pads. Further according to the invention, at the step of dicing two glued wafers into individual chips, the two wafers are separately cut. This enables chipping of the wafers to be reduced and the yield at the dicing step to be enhanced.

摘要翻译： 本发明的目的是提高在通过MEMS技术形成的微机械元件的装置中的产量和促进结合。 根据本发明，当具有其中形成有微机械元件和焊盘的多个区域的第一晶片和其中形成有孔的第二晶片将被胶合在一起时，该孔由多个焊盘共享 的地区。 这使得可以用常规使用的引线接合器将切割出晶片的各个芯片结合，因为在焊盘上方设置足够的孔。 此外，根据本发明，在将两个胶合晶片切割成单个芯片的步骤中，两个晶片被分开切割。 这样可以削减晶片的碎裂并提高切割步骤的成品率。

公开(公告)号：US20050067621A1

公开(公告)日：2005-03-31

申请号：US10788369

申请日：2004-03-01

申请人： Yasushi Goto ,  Shuntaro Machida ,  Natsuki Yokoyama

发明人： Yasushi Goto ,  Shuntaro Machida ,  Natsuki Yokoyama

IPC分类号： H01L21/82 ,  H01H59/00 ,  H01L21/00

CPC分类号： H01H59/0009 ,  H01H2001/0042 ,  H01H2001/0063

摘要： Disclosed herein is a latchable MEMS switch device capable of retaining its ON or OFF state even after the external power source is turned off. It is unnecessary not only to introduce novel materials such as magnetic material but also to form complicated structures. At least one of the cantilever and pull-down electrode of a cold switch is connected to a second MEMS switch. A capacitor between the cantilever and pull-down electrode of the cold switch is charged by the second MEMS switch. Thereafter since the cold switch is isolated in the device, the charge remains stored. Therefore, the cold switch can remain in the ON state since the charge continues to create electrostatic attraction between the cantilever and the pull-down electrode.

摘要翻译： 这里公开了即使在外部电源关闭之后也能够保持其接通或关断状态的可闭锁的MEMS开关装置。 不仅不需要引入诸如磁性材料的新型材料，而且形成复杂的结构。 冷开关的悬臂和下拉电极中的至少一个连接到第二MEMS开关。 冷开关的悬臂和下拉电极之间的电容器由第二MEMS开关充电。 此后，由于冷开关在器件中隔离，所以电荷保持存储。 因此，由于电荷继续在悬臂与下拉电极之间产生静电引力，所以冷开关可以保持在导通状态。

公开(公告)号：US08431420B2

公开(公告)日：2013-04-30

申请号：US13144229

申请日：2010-01-06

申请人： Takashi Kobayashi ,  Shuntaro Machida

发明人： Takashi Kobayashi ,  Shuntaro Machida

IPC分类号： H01L21/66

CPC分类号： B06B1/0292

摘要： The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented.

摘要翻译： 改善了半导体器件（CMUT）的制造成品率。 在形成用作保护膜的聚酰亚胺膜之前，膜被反复振动以评估上电极和下电极之间的击穿电压，以及上电极和下电极之间的击穿电压的缺陷CMUT电池的上电极 由于膜的重复振动预先被去除以切断与其他正常CMUT电池的电连接，电极被还原。 通过这种方式，在块RB或包括恢复的CMUT单元RC的通道RCH中，防止了在膜的重复振动之后上部电极和下部电极之间的击穿电压的降低。

公开(公告)号：US08132462B2

公开(公告)日：2012-03-13

申请号：US11996532

申请日：2006-01-30

申请人： Takashi Azuma ,  Shinichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

发明人： Takashi Azuma ,  Shinichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

IPC分类号： G01N29/34 ,  H02N1/08

CPC分类号： A61B8/4483 ,  A61B8/08 ,  A61B8/4281 ,  B06B1/0292 ,  G01N29/2431 ,  G01S15/00

摘要： The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103).

摘要翻译： 由作为基本单元的隔膜电声换能器（101）构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响，导致主光束灵敏度的漂移， 由于声学噪声水平的上升引起的声学SN比的降低，以及超声波束的方向性的劣化。 为了解决这个问题，提供一种充电控制器（充电监视器211）来控制电声换能器（101）中的电荷。 充电监视部（102）监视充电量的变化。 当充电量的变化小时，通过例如将接收信号乘以对应于变化量的校准系数，由控制器（104）校准发射灵敏度或接收灵敏度。 此外，当电荷量的变化大时，例如，电荷可以从电荷发射体（103）重新发射。

公开(公告)号：US20110086443A1

公开(公告)日：2011-04-14

申请号：US12999478

申请日：2009-06-05

申请人： Takashi Kobayashi ,  Shuntaro Machida ,  Kunio Hashiba

发明人： Takashi Kobayashi ,  Shuntaro Machida ,  Kunio Hashiba

IPC分类号： H01L21/82 ,  H01L21/66

CPC分类号： H04R31/00 ,  B81B2201/0257 ,  B81B2207/053 ,  B81C1/00214

摘要： A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips 1 in which a plurality of cells each having functions of transmitting and receiving ultrasonic waves are formed on a front surface of a first semiconductor wafer are manufactured, and each of the first chips 1 is judged as a superior/inferior product, and then, the first semiconductor wafer is sigulated into a plurality of first chips 1. Next, a plurality of second chips 2 in which a wiring layer is formed on a front surface of a second semiconductor wafer are manufactured, and each of the second chips 2 is judged as a superior/inferior product, and then, the second semiconductor wafer is sigulated into a plurality of second chips 2. Next, the plurality of first chips 1 judged as the superior product are adjacently arranged on the front surface of the second chip 2 judged as the superior product in plane in a Y direction so that lower electrodes 5 of the adjacent first chips 1 are electrically connected with each other via a through electrode 6, a bump 8, and a wiring layer 7.

摘要翻译： 半导体器件（电容式微加工超声换能器）的制造产量增加。 制造在第一半导体晶片的前表面上形成多个具有发送和接收超声波功能的多个单元的多个第一芯片1，并且将第一芯片1判断为上/下产品 然后，第一半导体晶片被配置成多个第一芯片1.接着，制造在第二半导体晶片的前表面上形成有布线层的多个第二芯片2， 将芯片2判断为优劣产品，然后将第二半导体晶片投入多个第二芯片2.接下来，判断为优质产品的多个第一芯片1相邻布置在 第二芯片2在Y方向上被认为是平面上的优异产品，使得相邻的第一芯片1的下电极5经由通电极6，凸块8和 布线层7。