公开(公告)号：US5978533A

公开(公告)日：1999-11-02

申请号：US64514

申请日：1998-04-23

申请人： Mitsuhiro Sugiyama

发明人： Mitsuhiro Sugiyama

IPC分类号： G02B6/42 ,  G02B6/30 ,  G02B6/36 ,  H01L21/301 ,  H01L31/02 ,  H01S5/00

CPC分类号： G02B6/30 ,  G02B6/3636 ,  G02B6/3692 ,  G02B6/4233

摘要： An optical part fixing chip in accordance with the present invention comprises: a guide trench bored in a substrate and having one end thereof abutted on one side of the chip; and a stepped area abutting on one end of the guide trench and extending along one side of the optical part fixing chip. The height of the step of the stepped area is the same as the depth of the guide trench.

摘要翻译： 根据本发明的光学部件固定芯片包括：引导沟槽，其在基板中钻孔并且其一端邻接在芯片的一侧; 以及邻接在所述导向槽的一端并沿着所述光学部件固定芯片的一侧延伸的阶梯区域。 阶梯区域的台阶高度与导槽的深度相同。

公开(公告)号：US20120055023A1

公开(公告)日：2012-03-08

申请号：US13207046

申请日：2011-08-10

申请人： Akira TANGE ,  Hideki Okada ,  Isao Sumiyoshi ,  Mitsuhiro Sugiyama

发明人： Akira TANGE ,  Hideki Okada ,  Isao Sumiyoshi ,  Mitsuhiro Sugiyama

IPC分类号： B21F35/00

CPC分类号： F16F1/06 ,  C21D7/06 ,  C21D9/02 ,  Y10T29/479 ,  Y10T29/49609 ,  Y10T29/49611

摘要： A spring wire with a hardness of 50 to 56 HRC is subjected to first and second shot peening processes within a warm working temperature range of 150 to 350° C. In the first shot peening process, a first shot of a shot size of at least 1.0 mm is used. In the second shot peening process, a second shot smaller in shot size than the first shot is sued. Through these shot peening processes, compressive residual stress is imparted to the spring wire. The spring wire includes a residual stress increase part, residual stress peak part, and residual stress decrease part. In the residual stress decrease part, a part including a compressive residual stress magnitude equivalent to the magnitude of the compressive residual stress at a surface of the spring wire exists at a region at a depth exceeding the permissible pit depth.

摘要翻译： 硬度为50至56HRC的弹簧丝在150至350℃的温暖​​工作温度范围内进行第一和第二喷丸硬化处理。在第一喷丸硬化处理中， 使用1.0毫米。 在第二次喷丸硬化过程中，拍摄尺寸比第一张照片小的第二张照片被起诉。 通过这些喷丸硬化处理，赋予弹簧丝压缩残余应力。 弹簧丝包括残余应力增加部分，残余应力峰部分和残余应力减少部分。 在残余应力减少部分中，包括与弹簧丝的表面处的压缩残余应力的大小相当的压缩残余应力大小的部分存在于超过允许凹坑深度的深度的区域。

公开(公告)号：USD613264S1

公开(公告)日：2010-04-06

申请号：US29326034

申请日：2008-10-10

申请人： Mitsuhiro Sugiyama ,  Yoshio Nakajima

设计人： Mitsuhiro Sugiyama ,  Yoshio Nakajima

公开(公告)号：US06307242B1

公开(公告)日：2001-10-23

申请号：US09252886

申请日：1999-02-18

申请人： Mitsuhiro Sugiyama

发明人： Mitsuhiro Sugiyama

IPC分类号： H01L310232

CPC分类号： H01L31/103 ,  H01L31/02325 ,  H01L31/028 ,  Y02E10/547

摘要： A semiconductor photo-detector, which has a high quantum efficiency due to high coupling with an incident beam and operates at higher frequency due to a reduced area of PN junction. In a semiconductor photo-detector of the present invention, reflection layers are deposited on both of the parallel surfaces of a square-shaped wave-guide, while light absorption layers are deposited on at least another pair of parallel surfaces which is one of the parallel pairs of remaining surfaces.

摘要翻译： 半导体光电检测器由于与入射光束的高耦合而具有高的量子效率，并且由于PN结的面积减小而在更高的频率下工作。 在本发明的半导体光检测器中，反射层沉积在方形波导的两个平行表面上，而光吸收层沉积在至少另一对平行的平行表面之间 成对的剩余表面。

公开(公告)号：US06075253A

公开(公告)日：2000-06-13

申请号：US60256

申请日：1998-04-15

申请人： Mitsuhiro Sugiyama ,  Toru Tatsumi

发明人： Mitsuhiro Sugiyama ,  Toru Tatsumi

IPC分类号： H01L31/10 ,  H01L31/028 ,  H01L31/0352 ,  H01L29/06

CPC分类号： H01L31/028 ,  H01L31/035281 ,  Y02E10/547

摘要： A semiconductor photodetector having a planar structure, including a first silicon layer having a first conductivity and formed with a recess, a silicon dioxide film covering a sidewall of the recess therewith, a germanium monocrystal layer formed in the recess, a first germanium layer having a first conductivity and sandwiched between the germanium monocrystal layer and the first silicon layer in the recess, a second germanium layer having a second conductivity and formed on the germanium monocrystal layer, and a second silicon layer having a second conductivity and formed on the second germanium layer. The first and second germanium layers prevent a depletion layer, which are generated in the germanium monocrystal layer when a voltage is applied to the semiconductor photodetector, from reaching the first and second silicon layers, respectively. In accordance with the semiconductor photodetector, a depletion layer generated in the germanium monocrystal layer is prevented from reaching the first and second silicon layers, and hence, electric charges generated by introduction of light into the germanium monocrystal layer would not be recombined to each other through a recombination core. As a result, it is possible to avoid reduction in a photoelectric current or a quantum efficiency.

摘要翻译： 一种具有平面结构的半导体光电检测器，包括具有第一导电性的第一硅层和形成有凹部的半导体光电检测器，覆盖其凹部的侧壁的二氧化硅膜，形成在凹部中的锗单晶层，具有第一锗层的第一锗层， 第一导电性并夹在凹槽内的锗单晶层和第一硅层之间，形成在锗单晶层上的具有第二导电性的第二锗层和形成在第二锗层上的具有第二导电性的第二硅层 。 第一和第二锗层防止当向半导体光电检测器施加电压时在锗单晶层中产生的耗尽层分别达到第一和第二硅层。 根据半导体光电探测器，防止在锗单晶层中产生的耗尽层到达第一和第二硅层，因此通过将锗引入锗单晶层而产生的电荷将不会通过 重组核心。 结果，可以避免光电流或量子效率的降低。

公开(公告)号：US6005340A

公开(公告)日：1999-12-21

申请号：US806423

申请日：1997-02-26

申请人： Masayoshi Misono ,  Tutomu Tojyo ,  Hiroyuki Tamura ,  Mitsuhiro Sugiyama

发明人： Masayoshi Misono ,  Tutomu Tojyo ,  Hiroyuki Tamura ,  Mitsuhiro Sugiyama

IPC分类号： H01J29/58 ,  H01J29/70 ,  H01J29/46 ,  H01J29/50

CPC分类号： H01J29/707 ,  H01J29/58

摘要： A color cathode ray tube includes an electron gun having a plurality of electrodes, an electron beam deflection device and a phosphor screen. A deflection defocusing correcting element is located in a deflection magnetic field produced by the deflection device to locally modify the magnetic field in a path of an electron beam and corrects the deflection defocusing of the electron beam corresponding to deflection of the electron beam. The deflection defocusing element includes the magnetic metal plate providing magnetic pole pieces and a non-magnetic metal support for holding the magnetic metal plate in place. The magnetic metal plate and the non-magnetic metal support are laminated or clad one on another, or joined edge-to-edge.

摘要翻译： 彩色阴极射线管包括具有多个电极的电子枪，电子束偏转装置和荧光屏。 偏转散焦校正元件位于由偏转装置产生的偏转磁场中，以局部地修改电子束的路径中的磁场，并校正对应于电子束的偏转的电子束的偏转散焦。 偏转散焦元件包括提供磁极片的磁性金属板和用于将磁性金属板保持在适当位置的非磁性金属支撑件。 磁性金属板和非磁性金属载体层叠或包覆在另一个上，或者连接到边缘到边缘。

公开(公告)号：US5587612A

公开(公告)日：1996-12-24

申请号：US526177

申请日：1995-09-11

申请人： Mitsuhiro Sugiyama

发明人： Mitsuhiro Sugiyama

IPC分类号： H01L21/76 ,  H01L21/306 ,  H01L21/331 ,  H01L21/84 ,  H01L27/12 ,  H01L29/00 ,  H01L27/01

CPC分类号： H01L29/66265 ,  H01L21/84 ,  H01L27/1203

摘要： Disclosed is a semiconductor device in which dummy regions which are lower than an isolated element region are formed around the isolated element region. Another dummy region which has a height nearly equal to those of element regions may be formed at a non-element-region-existing region, accompanying with lower dummy regions. The method for making the semiconductor device has the steps of suitably forming the element regions and dummy regions on a insulating layer on a substrate, depositing a insulator on the entire surface of the insulating layer and polishing the insulator to obtain a plane surface.

摘要翻译： 公开了一种半导体器件，其中在隔离元件区域周围形成了低于隔离元件区域的虚拟区域。 伴随着较低的虚拟区域，可以在非元件区域存在的区域形成高度几乎等于元件区域的高度的虚拟区域。 制造半导体器件的方法具有在衬底上的绝缘层上适当地形成元件区域和虚设区域的步骤，在绝缘层的整个表面上沉积绝缘体并抛光绝缘体以获得平面。