摘要:
The present invention relates to a method and apparatus for partial etching or pattern etching using an electrolysis reaction, wherein, conventionally, there was the problem that an etching line could not be finely formed on a cell edge because of apparatus problems concerning alignment accuracy. The present invention provides a method and apparatus with which fine line etching is possible and which can form a line on a cell edge. Provided is a an electrolytic etching method of a substrate which is formed having a subject etching layer on a surface, having the steps of providing a fixed gap from a substrate end surface which is external to an end surface of the substrate for placing a working part of a working electrode and passing current between the substrate and the working electrode.
摘要:
The present invention relates to a method and apparatus for partial etching or pattern etching using an electrolysis reaction, wherein, conventionally, there was the problem that an etching line could not be finely formed on a cell edge because of apparatus problems concerning alignment accuracy. The present invention provides a method and apparatus with which fine line etching is possible and which can form a line on a cell edge.Provided is a an electrolytic etching method of a substrate which is formed having a subject etching layer on a surface, having the steps of providing a fixed gap from a substrate end surface which is external to an end surface of the substrate for placing a working part of a working electrode and passing current between the substrate and the working electrode.
摘要:
When control to maintain a constant engine rotation number is executed, the electronic control unit constantly monitors an error of detected throttle position data with respect to a desired throttle control value, executes a first stage of a failure judgment method to judge that a failure of a throttle control system has occurred in a case where an absolute value of the error exceeds a predetermined threshold value continuously for a predetermined time or longer, and executes a second stage of the failure judgment method to judge that a serious failure has occurred in the system in a case where a detected engine rotation number exceeds a predetermined rotation number continuously for a predetermined time or longer, to perform predetermined operations in accordance with the judgment results.
摘要:
The present invention provides a throttle apparatus having an electronic control means built-in which uses an engine fuel supply system having a carburetor specification and is arranged for constructing a fuel injection system in accordance with an electronic control.
摘要:
The invention provides a fuel supply control method and apparatus in which an air fuel ratio does not become rich even if an acceleration and deceleration operation is repeated for a short time in the case that a time lag with respect to a response from a detection of an acceleration state to a fuel amount increase is large, and troubles such as a black smoke generation from an exhaust pipe, an engine stop and the like are not generated. In a fuel supply control method of an internal combustion chamber for increasing an amount of a fuel for acceleration so as to inject from an injection apparatus, at a time of detecting a transient state at an accelerating time or the like on the basis of data such as an opening degree of a throttle valve and/or an air suction pressure, the method inhibits the fuel amount increase for acceleration on the basis of the detection of the transient state, if a total amount of an injection fuel per a unit time is more than a fixed value.
摘要:
A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.
摘要:
A process for the formation of a functional deposited film containing atoms belonging to the group II and VI of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a group II compound (1) and a group VI compound (2) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in an excited state which cause chemical reaction with at least one of the compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atom is controlled.
摘要:
A throttle apparatus embedding an electronic control unit in which a circuit board of the electronic control unit is embedded within a throttle body and a connector for connecting to an external portion connected to a terminal provided in the circuit board protrudes from an outer wall of the throttle body in a direction approximately along a terminal side of the circuit board surface from one side line of the circuit board, wherein the circuit board is storable within the throttle body by selecting an optional mounting direction from at least two or more directions having different angles on the same plane around a center portion of the circuit board, and an insertion portion capable of protruding the connector to an external portion through an outer wall of the throttle body is provided at each of corresponding positions of the outer wall.