Symbol illumination apparatus and video display apparatus
    33.
    发明授权
    Symbol illumination apparatus and video display apparatus 有权
    符号照明装置和视频显示装置

    公开(公告)号:US07513429B2

    公开(公告)日:2009-04-07

    申请号:US11177357

    申请日:2005-07-11

    IPC分类号: G06K7/10

    摘要: The present invention provides a symbol illumination apparatus configured to have a symbol such as characters printed on a front surface of a transparent member, and to allow light from a plurality of light sources to pass through an interior of the transparent member from one side of the transparent member, to illuminate the symbol. A lens sheet and a diffused sheet are inserted between the transparent member and the plurality of light sources in the symbol illumination apparatus. This configuration prevents a plurality of light rays from being seen on the bottom of the transparent member.

    摘要翻译: 本发明提供一种符号照明装置,其被配置为具有诸如打印在透明构件的前表面上的字符的符号,并且允许来自多个光源的光从该透明构件的一侧穿过透明构件的内部 透明构件,以照亮符号。 在符号照明装置中的透明构件和多个光源之间插入透镜片和扩散片。 这种构造防止在透明构件的底部看到多个光线。

    SLOT NOZZLE ASSEMBLY, SLOT COATING GUN, SHIM PLATE, AND METHOD OF EXTRUDING A FOAMABLE MELTED MATERIAL IN A WIDE BAND
    35.
    发明申请
    SLOT NOZZLE ASSEMBLY, SLOT COATING GUN, SHIM PLATE, AND METHOD OF EXTRUDING A FOAMABLE MELTED MATERIAL IN A WIDE BAND 失效
    槽喷嘴组件,槽涂胶枪,刮板,以及在宽带中挤出可熔融熔融材料的方法

    公开(公告)号:US20090022890A1

    公开(公告)日:2009-01-22

    申请号:US12174867

    申请日:2008-07-17

    IPC分类号: B05D5/00 B05C5/04

    摘要: A slot nozzle assembly for extruding a foamable melted material in a wide band including a plurality of foamable melted material passages, lateral distribution flow routes communicating with the plurality of foamable melted material passages, a restriction member disposed inside the lateral distribution flow routes, a slot for discharging foamable melted material, and a converging portion which communicates with the lateral distribution flow routes and the slot, and whose cross-section area gradually becomes smaller toward the slot.

    摘要翻译: 1.一种狭缝喷嘴组件,用于在包括多个可发泡熔融材料通道的宽带中挤出可发泡熔融材料,与多个可发泡熔融材料通道连通的横向分配流动路径,设置在横向分配流动路径内的限制构件, 用于排出可发泡的熔融材料,以及与横向分配流路和槽连通并且横截面积朝向槽逐渐变小的会聚部。

    Biocatalyst for production of d-lactic acid (as amended)
    36.
    发明申请
    Biocatalyst for production of d-lactic acid (as amended) 有权
    用于生产d-乳酸的生物催化剂(经修订)

    公开(公告)号:US20070065930A1

    公开(公告)日:2007-03-22

    申请号:US10573813

    申请日:2004-09-17

    IPC分类号: C12P7/56 C12N1/21

    CPC分类号: C12P7/56

    摘要: A method for producing D-lactic acid in high yield, and to provide a method for producing D-lactic acid with high selectivity, in which optical purity is high and a by-product organic acid is small. In one aspect, a microorganism, wherein activity of pyruvate formate-lyase (pfl) is inactivated or decreased, and further activity of Escherichia coli-derived NADH-dependent D-lactate dehydrogenase (ldhA) is enhanced, is cultured to efficiently produce D-lactic acid. With regard to a method for enhancing ldhA activity, by linking, on a genome, a gene encoding ldhA with a promoter of a gene which controls expression of a protein involved in a glycolytic pathway, a nucleic acid biosynthesis pathway or an amino acid biosynthesis pathway, suitable results are obtained compared to the method for enhancing expression of the gene using an expression vector. A microorganism in which a dld gene is substantially inactivated or decreased is cultured to produce high quality D-lactic acid with reduced concentration of pyruvic acid.

    摘要翻译: 提供高产率D-乳酸的制造方法,提供高纯度的高纯度D-副乳酸和副产物有机酸的生产方法。 在一个方面,培养其中丙酮酸甲酸裂合酶(pfl)的活性失活或降低,并且进一步增强大肠杆菌来源的NADH依赖性D-乳酸脱氢酶(ldhA)的活性的微生物,以有效地产生D- 乳酸。 关于增强ldhA活性的方法,通过在基因组上连接编码ldhA的基因与控制糖酵解途径参与蛋白质的表达的基因的启动子,核酸生物合成途径或氨基酸生物合成途径 与使用表达载体增强基因表达的方法相比,获得了合适的结果。 培养其中dld基因基本上失活或减少的微生物被培养以产生具有降低的丙酮酸浓度的高质量D-乳酸。

    Flat panel display apparatus, stand and speaker apparatus
    38.
    发明申请
    Flat panel display apparatus, stand and speaker apparatus 有权
    平板显示装置,支架和扬声器装置

    公开(公告)号:US20060008103A1

    公开(公告)日:2006-01-12

    申请号:US11174374

    申请日:2005-07-01

    IPC分类号: H04R1/02 H04R5/02

    摘要: A stand on which a flat panel display main body is placed has low-pitched sound speakers built therein and a speaker of the flat panel display main body and the low-pitched sound speakers of the stand are combined together to construct a powerful sound system with large sound volume. The low-pitched sound speakers are located at the back side of the flat panel display main body when the flat panel display main body is placed on the stand. In a flat panel display apparatus composed of the flat panel display main body having the speaker built therein and the stand supporting this flat panel display main body thereon, it is possible to easily realize a powerful sound system using the low-pitched sound speakers (woofers) without requiring any extra space.

    摘要翻译: 安装平板显示器主体的支架内置低音扬声器,平板显示器主体的扬声器和支架的低音扬声器组合在一起构成强大的音响系统,具有 音量大。 当平板显示器主体放置在支架上时,低音扬声器位于平板显示器主体的背面。 在由具有内置扬声器的平板显示器主体和支撑该平板显示器主体的支架构成的平板显示装置中,可以容易地实现使用低音扬声器(低音扬声器 ),而不需要任何额外的空间。

    Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure
    39.
    发明授权
    Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure 失效
    具有绝缘栅双极晶体管的半导体器件,具有绝缘隔离结构

    公开(公告)号:US06677622B2

    公开(公告)日:2004-01-13

    申请号:US10090823

    申请日:2002-03-06

    IPC分类号: H01L2974

    CPC分类号: H01L29/66325 H01L29/7394

    摘要: A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconductor substrate. A third semiconductor region is of second-conductivity-type and formed on the first semiconductor region. The third semiconductor region has an impurity concentration higher than that of the first semiconductor region. A fourth semiconductor region is of first-conductivity-type and formed on the third semiconductor region. A first main electrode is formed on the fourth semiconductor region. A second main electrode is formed on the second semiconductor region. A gate electrode is formed, at least on the first semiconductor region and on the principal surface of the semiconductor substrate between the fourth semiconductor region and the second semiconductor region, with a gate insulating film therebetween.

    摘要翻译: 半导体衬底是第一导电型并具有主表面。 第一半导体区域和第二半导体区域是第二导电型并且在半导体衬底的主表面中彼此分开形成。 第三半导体区域是第二导电型并形成在第一半导体区域上。 第三半导体区域的杂质浓度高于第一半导体区域。 第四半导体区域是第一导电型并形成在第三半导体区域上。 第一主电极形成在第四半导体区域上。 第二主电极形成在第二半导体区域上。 至少在第一半导体区域和第四半导体区域与第二半导体区域之间的半导体衬底的主表面上形成栅电极,其间具有栅极绝缘膜。