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    High frequency power amplifier circuit device
    34.
    发明授权
    High frequency power amplifier circuit device 有权
    高频功率放大器电路设备

    公开(公告)号：US06759906B2

    公开(公告)日：2004-07-06

    申请号：US10170376

    申请日：2002-06-14

    申请人： Yoshikuni Matsunaga ,  Toshihiko Shimizu ,  Tomio Furuya ,  Nobuhiro Matsudaira ,  Koichi Matsushita

    发明人： Yoshikuni Matsunaga ,  Toshihiko Shimizu ,  Tomio Furuya ,  Nobuhiro Matsudaira ,  Koichi Matsushita

    IPC分类号： H03G330

    CPC分类号： H03F1/0261 ,  H03F2200/465 ,  H03G1/0017 ,  H03G3/3042 ,  H03G3/3047

    摘要： A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

    摘要翻译： 多级高频功率放大器电路装置具有串联连接的多个半导体放大元件。 电路装置设置有偏置控制电路，用于控制各级输出半导体放大元件的偏置电压或偏置电流，以便减少相对于周围区域内的功率控制信号电压的输出功率的变化 半导体放大元件的阈值电压。 这实现了在使用诸如功率控制信号的这种控制电压实现的低功率输出时，输出功率具有优异的可控制性和高效率的高频功率放大器电路器件。

    High frequency power amplifying module and wireless communication apparatus
    35.
    发明授权
    High frequency power amplifying module and wireless communication apparatus 有权
    高频功率放大模块和无线通信设备

    公开(公告)号：US06492872B1

    公开(公告)日：2002-12-10

    申请号：US09657237

    申请日：2000-09-07

    申请人： Toru Fujioka ,  Yoshikuni Matsunaga ,  Isao Yoshida ,  Masatoshi Morikawa ,  Masao Hotta ,  Tetsuaki Adachi

    发明人： Toru Fujioka ,  Yoshikuni Matsunaga ,  Isao Yoshida ,  Masatoshi Morikawa ,  Masao Hotta ,  Tetsuaki Adachi

    IPC分类号： H03G310

    CPC分类号： H03F1/301 ,  H03G3/3042

    摘要： A high frequency power amplifier module is provided for improving output controllability. A wireless communication apparatus incorporates a high frequency power amplifier module in a multi-stage configuration including a plurality of cascaded MOSFETS. The power amplifier module comprises a bias circuit for generating a gate voltage in response to a power control voltage (vapc) generated based on a power control signal of the wireless communication apparatus. The gate voltage has a bias pattern which presents smaller fluctuations in output power in response to a control voltage (Vapc) in a region near a threshold voltage (Vth) of the MOSFETs in respective amplification stages. In this way, the controllability for the output power is improved. More specifically, the power amplifier module has a gate bias circuit for generating the gate voltage (Vg) which follows a gate voltage pattern. The gate voltage (Vg) supplied to a control terminal in response to the control voltage (Vapc) largely changes in a region where the gate voltage (Vg) is lower than the threshold voltage (Vth) of the respective MOSFETs, and slightly changes near the threshold voltage (Vth). Also, the gate voltage (Vg) presents desired characteristics from the vicinity of the threshold voltage (Vth) to a high Vapc voltage region.

    摘要翻译： 提供了一种用于提高输出可控性的高频功率放大器模块。 无线通信装置将包括多个级联MOSFET的多级配置的高频功率放大器模块结合在一起。 功率放大器模块包括用于响应于基于无线通信设备的功率控制信号产生的功率控制电压（vapc）产生栅极电压的偏置电路。 栅极电压具有偏置图案，其响应于在各个放大级中的MOSFET的阈值电压（Vth）附近的区域中的控制电压（Vapc），输出功率的波动较小。 以这种方式，提高了输出功率的可控性。 更具体地，功率放大器模块具有用于产生跟随栅极电压图案的栅极电压（Vg）的栅极偏置电路。 响应于控制电压（Vapc）而提供给控制端的栅极电压（Vg）在栅极电压（Vg）低于各个MOSFET的阈值电压（Vth）的区域内大大变化，并且稍微改变 阈值电压（Vth）。 此外，栅极电压（Vg）从阈值电压（Vth）附近到高Vapc电压区域呈现期望的特性。