Method of fabricating semiconductor device and semiconductor device
fabricated thereby
    31.
    发明授权
    Method of fabricating semiconductor device and semiconductor device fabricated thereby 失效
    制造半导体器件的方法和由此制造的半导体器件

    公开(公告)号:US5682045A

    公开(公告)日:1997-10-28

    申请号:US525175

    申请日:1995-09-08

    摘要: An Si-doped AlInAs layer and an intrinsic AlInAs layer are successively grown on a semi-insulating InP substrate in a molecular beam epitaxy chamber. The sample is then heat-treated in a nitrogen ambient at 400.degree. C. for 18 minutes so that electrical characteristics of the sample are deteriorated because of the infiltration of fluorine into the Si-doped AlInAs layer. The sample is then placed in the molecular beam epitaxy chamber and reheat-treated in an ultra-high vacuum at 400.degree. C. for seven minutes and the fluorine is removed.

    摘要翻译: 在分子束外延室中的半绝缘InP衬底上依次生长Si掺杂的AlInAs层和本征AlInAs层。 然后将样品在氮气环境中在400℃下热处理18分钟,使得样品的电特性由于氟渗入Si掺杂的AlInAs层而劣化。 然后将样品置于分子束外延室中,并在400℃的超高真空中再加热处理7分钟,并除去氟。

    Semiconductor device strucutre having a two-dimensional electron gas and
contact thereto
    32.
    发明授权
    Semiconductor device strucutre having a two-dimensional electron gas and contact thereto 失效
    半导体器件结构具有二维电子气并与其接触

    公开(公告)号:US5677553A

    公开(公告)日:1997-10-14

    申请号:US358712

    申请日:1994-12-19

    CPC分类号: H01L29/7783

    摘要: A semiconductor device includes a very low dopant impurity concentration InGaAs active layer in which a two-dimensional electron gas is produced, the active layer being disposed on a semiconductor substrate; a very low dopant impurity concentration spacer layer contacting the active layer at a first surface and having an electron affinity smaller than the electron affinity of the active layer; and a very thin InGaAs electron supply layer having a high n type dopant impurity concentration and contacting the spacer layer opposite the active layer. Degradation of device characteristics due to heating of the device is reduced with a result that a thermally stable and highly reliable semiconductor device is easily realized.

    摘要翻译: 半导体器件包括其中产生二维电子气的非常低的掺杂剂杂质浓度InGaAs有源层,有源层设置在半导体衬底上; 非常低的掺杂剂杂质浓度间隔层,其在第一表面与活性层接触并且具有小于有源层的电子亲和力的电子亲和力; 以及非常薄的InGaAs电子供给层,其具有高n型掺杂剂杂质浓度并使与间隔层相对的有源层接触。 降低了由于器件加热引起的器件特性的降低,从而容易实现热稳定且高可靠性的半导体器件。

    MBE apparatus and gas branch piping apparatus
    33.
    发明授权
    MBE apparatus and gas branch piping apparatus 失效
    MBE装置和气体分支管道装置

    公开(公告)号:US5616181A

    公开(公告)日:1997-04-01

    申请号:US561455

    申请日:1995-11-21

    摘要: An MBE apparatus includes a reaction chamber in which a molecular beam of a gas irradiates a substrate for crystal growth; a gas bomb containing the gas; a regulator for reducing the pressure of the gas from the gas bomb; a pressure control apparatus having one or more anode and cathode electrodes, a coil for generating a magnetic field applied to the supplied gas, and a controller for controlling the electric field between the anode and cathode electrodes, the area of the anode and cathode electrodes, and the magnetic field generated by the coil, so that a molecular beam irradiates the substrate with the gas supplied. The supply of the gas may be quickly varied with high reproducibility and high precision. In addition, a semiconductor layer having a uniform carrier concentration can be easily formed on the semiconductor substrate or a semiconductor layer having a uniform composition ratio can be easily formed on the semiconductor substrate.

    摘要翻译: MBE装置包括反应室,其中气体的分子束照射用于晶体生长的基板; 包含气体的气体炸弹; 用于降低气体炸弹气体压力的调节器; 具有一个或多个阳极和阴极电极的压力控制装置,用于产生施加到供应气体的磁场的线圈,以及用于控制阳极和阴极电极之间的电场的控制器,阳极和阴极电极的面积, 和由线圈产生的磁场,使得分子束用所供给的气体照射衬底。 气体的供应可以快速变化,重现性高,精度高。 此外,可以容易地在半导体衬底上形成具有均匀载流子浓度的半导体层,或者可以容易地在半导体衬底上形成具有均匀组成比的半导体层。