摘要:
A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要:
A method and a device for treating a material having nanoscale pores), especially implant material for the treatment of living cells, as provided. The method distinguished in that the surface tension of a substance (10) provided for filling the volumes of the nanoscale pores (9) is reduced. The present invention also includes a device for carrying out this method.
摘要:
A method for manufacturing an at least partially porous, hollow silicon body, including the steps of vertical, anisotropic etching, porosifying, and electropolishing. Hollow silicon bodies manufactured using this method; the body wall including an inner layer, an intermediate layer, and an outer layer, and the porosity of the intermediate layer being greater than those of the inner and outer layers. The use of the hollow silicon bodies.