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1.发明申请Method for manufacturing an at least partially porous, hollow silicon body, hollow silicon bodies manufacturable by this method, and uses of these hollow silicon bodies 审中-公开用于制造至少部分多孔的中空硅体的方法，可通过该方法制造的中空硅体以及这些中空硅体的用途公开(公告)号：US20080050610A1
公开(公告)日：2008-02-28
申请号：US11821979
申请日：2007-06-25
申请人： Michael Stumber , Ralf Reichenbach , Tjalf Pirk , Ando Feyh , Dick Scholten , Christian Maeurer
发明人： Michael Stumber , Ralf Reichenbach , Tjalf Pirk , Ando Feyh , Dick Scholten , Christian Maeurer
CPC分类号： A61K9/0009 , A61K9/501 , A61K9/5089 , Y10T428/12361
摘要： A method for manufacturing an at least partially porous, hollow silicon body, including the steps of vertical, anisotropic etching, porosifying, and electropolishing. Hollow silicon bodies manufactured using this method; the body wall including an inner layer, an intermediate layer, and an outer layer, and the porosity of the intermediate layer being greater than those of the inner and outer layers. The use of the hollow silicon bodies.
摘要翻译： 一种用于制造至少部分多孔的中空硅体的方法，包括垂直，各向异性蚀刻，开孔和电解抛光的步骤。 使用这种方法制造的中空硅体; 所述主体壁包括内层，中间层和外层，并且所述中间层的孔隙率大于所述内层和外层的孔隙率。 使用中空硅体。
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2.发明授权Method for manufacturing porous microstructures, porous microstructures manufactured according to this method, and the use thereof 失效用于制造多孔微结构的方法，根据该方法制造的多孔微结构及其用途公开(公告)号：US08377315B2
公开(公告)日：2013-02-19
申请号：US12810973
申请日：2008-11-19
申请人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
发明人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
IPC分类号： C23F1/00
CPC分类号： A61K9/0019 , A61B5/02755 , A61K9/0024 , A61K9/2009 , A61K31/337 , A61M37/0015 , A61M2037/0023 , A61M2037/0053 , B81B2201/055 , B81C1/00126 , B81C2201/0115 , Y10T428/249978
摘要： A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.
摘要翻译： 一种用于制造硅半导体衬底中的多孔微结构的方法，根据该方法制造的多孔微结构及其用途。
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3.发明申请METHOD FOR MANUFACTURING POROUS MICROSTRUCTURES, POROUS MICROSTRUCTURES MANUFACTURED ACCORDING TO THIS METHOD, AND THE USE THEREOF 失效用于制造多孔微结构的方法，根据该方法制造的多孔微结构及其使用公开(公告)号：US20110281102A1
公开(公告)日：2011-11-17
申请号：US12810973
申请日：2008-11-19
申请人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
发明人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
CPC分类号： A61K9/0019 , A61B5/02755 , A61K9/0024 , A61K9/2009 , A61K31/337 , A61M37/0015 , A61M2037/0023 , A61M2037/0053 , B81B2201/055 , B81C1/00126 , B81C2201/0115 , Y10T428/249978
摘要： A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.
摘要翻译： 一种用于制造硅半导体衬底中的多孔微结构的方法，根据该方法制造的多孔微结构及其用途。
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公开(公告)号：US20100009077A1
公开(公告)日：2010-01-14
申请号：US12225504
申请日：2007-02-12
CPC分类号： B08B7/0021
摘要： A method and a device for treating a material having nanoscale pores), especially implant material for the treatment of living cells, as provided. The method distinguished in that the surface tension of a substance (10) provided for filling the volumes of the nanoscale pores (9) is reduced. The present invention also includes a device for carrying out this method.
摘要翻译： 一种用于处理具有纳米尺度孔的材料的方法和装置），特别是用于治疗活细胞的植入材料。 该方法的特征在于减少了用于填充纳米级孔（9）的体积的物质（10）的表面张力。 本发明还包括用于执行该方法的装置。
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5.发明授权Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure 失效半导体结构的制造方法以及相应的半导体结构公开(公告)号：US08148234B2
公开(公告)日：2012-04-03
申请号：US12282842
申请日：2007-03-09
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L21/76
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。
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6.发明授权Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type 失效具有改性表面性质的硅衬底的制造方法和所述类型的硅衬底公开(公告)号：US08492850B2
公开(公告)日：2013-07-23
申请号：US12308200
申请日：2007-04-27
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L27/088
CPC分类号： H01L21/02008 , H01L21/02381 , H01L21/02529 , H01L21/02573 , H01L21/02601 , H01L21/02612 , H01L21/02656 , H01L21/02658 , H01L21/02667 , H01L33/346
摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。
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7.发明申请METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE, AND A CORRESPONDING SEMICONDUCTOR STRUCTURE 审中-公开制造半导体结构的方法和相应的半导体结构公开(公告)号：US20120132925A1
公开(公告)日：2012-05-31
申请号：US13366067
申请日：2012-02-03
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L29/24
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate (1) is supplied; a porous region (10) is provided adjacent to a surface (OF) of the semiconductor substrate (1); a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10′) of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate (1). A corresponding semiconductor structure is likewise provided.
摘要翻译： 提供一种制造半导体结构的方法，包括以下步骤：提供晶体半导体衬底（1）; 邻近半导体衬底（1）的表面（OF）设置多孔区域（10）; 从表面（OF）将掺杂剂（12）引入多孔区域（10）中; 并且多孔区域（10）被热再结晶成半导体衬底（1）的结晶掺杂区域（10'），其掺杂类型和/或掺杂浓度和/或掺杂分布与半导体衬底 基板（1）。 同样提供相应的半导体结构。
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8.发明申请Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type 失效具有改性表面性质的硅衬底的制造方法和所述类型的硅衬底公开(公告)号：US20100035068A1
公开(公告)日：2010-02-11
申请号：US12308200
申请日：2007-04-27
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
CPC分类号： H01L21/02008 , H01L21/02381 , H01L21/02529 , H01L21/02573 , H01L21/02601 , H01L21/02612 , H01L21/02656 , H01L21/02658 , H01L21/02667 , H01L33/346
摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。
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9.发明申请公开(公告)号：US20090236610A1
公开(公告)日：2009-09-24
申请号：US12282842
申请日：2007-03-09
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。
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公开(公告)号：US20110034873A1
公开(公告)日：2011-02-10
申请号：US12811936
申请日：2008-12-17
CPC分类号： F04B43/043 , F04B19/006
摘要： A method for manufacturing a micropump, which may be for the metered delivery of insulin, multiple layers being situated on the front side of a first carrier layer, which has a front side and a rear side, and microfluidic functional elements being formed by structuring at least one of the layers. It is provided that the structuring of the at least one layer for manufacturing all microfluidic functional elements is exclusively performed by front side structuring. Furthermore, a micropump is disclosed.
摘要翻译： 一种制造微型泵的方法，其可用于计量输送胰岛素，多层位于具有前侧和后侧的第一载体层的正面上，微流体功能元件通过在 至少一层。 提供用于制造所有微流控功能元件的至少一层的结构化仅通过前端结构进行。 此外，公开了一种微型泵。
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