公开(公告)号：US5587627A

公开(公告)日：1996-12-24

申请号：US395703

申请日：1995-02-28

申请人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Minoru Kobayashi ,  Susumu Hoshinouchi ,  Yoshinori Hatanaka

发明人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Minoru Kobayashi ,  Susumu Hoshinouchi ,  Yoshinori Hatanaka

IPC分类号： H01J31/12 ,  H05B37/02

CPC分类号： H01J31/126

摘要： A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing the into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance at least by (1) providing a voltage applying circuit for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes.

摘要翻译： 通过用导电膜涂覆绝缘基板并将其分成多个导电膜作为对照，形成用于使电子通过选自设置在绝缘基板上的多个电子通过孔中的给定电子通过孔的控制电极部分 电极。 这种结构消除了在绝缘基板上布置控制电极的情况下必需的电子的网格结构，从而实现了具有改善的亮度的高清晰度显示装置。 另外，具有通过在具有电子通过孔的导电性基板上形成绝缘膜而形成的表面绝缘基板的平面显示装置和配置在表面绝缘基板上的多个分立控制电极，能够防止充电 至少通过（1）提供用于向导电衬底施加预定电压的电压施加电路，（2）提供导电衬底露出的部分，从而阻止电子束通过，并因此提高亮度 在相邻的控制电极之间。

公开(公告)号：US5153434A

公开(公告)日：1992-10-06

申请号：US701090

申请日：1991-05-16

申请人： Yusuke Yajima ,  Masakazu Ichikawa ,  Mikio Ichihashi ,  Ryo Suzuki ,  Masatoshi Takeshita

发明人： Yusuke Yajima ,  Masakazu Ichikawa ,  Mikio Ichihashi ,  Ryo Suzuki ,  Masatoshi Takeshita

IPC分类号： H01J37/20 ,  H01J37/26

CPC分类号： H01J37/266 ,  H01J37/20

摘要： An electron microscope and a method for obtaining microscopic images whereby the intensity and distribution of the internal magnetic field of a specimen are acquired with precision. The electron microscope irradiates a focused electron beam at a target specimen and detects the transmitted beam past the specimen. The irradiated position on the specimen is selected by one of three ways: by moving the specimen alone, by deflecting the focused electron beam before it enters the specimen, or by combining these two ways. In this setup, the internal magnetic field of the specimen under its irradiated spot is known through detection of the deflection of the electron beam caused by the Lorentz force and through arithmetic processing of the detected deflection. An actuator that moves the specimen comprises a support with a hole through which the electron beam passes, a specimen stage with a like hole, a plurality of piezoelectric devices, and a structure that lets the electron beam pass therethrough. The actuator also comprises a mobile stage mounted on the support and attached to the specimen stage via the multiple piezoelectric devices, the mobile stage causing the devices to shift the support normal to the electron beam. Another component of the actuator is a stage control means for supplying a driving voltage to the multiple piezoelectric devices for their position control.

公开(公告)号：US5118984A

公开(公告)日：1992-06-02

申请号：US666002

申请日：1991-03-07

申请人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Hisao Nakanishi ,  Kinjiro Sano ,  Toyokazu Kamata ,  Takashi Shinjou

发明人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Hisao Nakanishi ,  Kinjiro Sano ,  Toyokazu Kamata ,  Takashi Shinjou

IPC分类号： H01J1/26 ,  H01J1/14 ,  H01J1/142 ,  H01J9/04 ,  H01J29/04

CPC分类号： H01J29/04 ,  H01J1/142

摘要： A metal layer of not more than 2.0 .mu.m thick is formed on a base, containing nickel as the main ingredient and a reducing agent such as silicon and magnesium, by depositing tungsten by an electron beam under heating in a vacuum. The base is heat treated in a hydrogen atmosphere at 800.degree. to 1,100.degree. C. An emissive material layer, containing an alkali earth metal oxide and 0.01 to 25 wt % of a rare earth metal oxide, the alkali earth metal oxide containing at least barium oxide, is formed on the metal layer. Thus, life characteristics of the cathode, especially during the operation at a high current density such as not less than 2A/cm.sub.2, are greatly enhanced.

公开(公告)号：US4894098A

公开(公告)日：1990-01-16

申请号：US225368

申请日：1988-07-28

申请人： Shigekazu Otomo ,  Noriyuki Kumasaka ,  Ryo Imura ,  Ryo Suzuki ,  Yutaka Sugita

发明人： Shigekazu Otomo ,  Noriyuki Kumasaka ,  Ryo Imura ,  Ryo Suzuki ,  Yutaka Sugita

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/21 ,  G11B5/31 ,  H01F41/18

CPC分类号： H01F41/18 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/1878 ,  G11B5/21 ,  G11B5/31 ,  G11B5/3163 ,  Y10S148/90 ,  Y10T29/49034

摘要： Ion implantation is conducted in a desired area(s) of the surface of a magnetic layer, and annealing of the layer is carried out to control the composition in that desired area(s). The control of the composition may be facilitated by applying a one-directional or rotating magnetic field during ion implantation. In preparing a magnetic head, a portion of a magnetic pole at least on one side thereof in close proximity to a magnetic recording medium is formed into an iron or iron-based magnetic alloy film, at least part of which is subjected to ion implantation and annealing.

公开(公告)号：US4845671A

公开(公告)日：1989-07-04

申请号：US225318

申请日：1988-07-28

申请人： Youji Maruyama ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Ryo Suzuki

发明人： Youji Maruyama ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Ryo Suzuki

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0858

摘要： A Bloch line memory device and a method of erasing information in which, for erasure of a Bloch line pair representative of one bit of information and located in one end portion of one stripe domain, the stripe domain is stretched by decreasing the intensity of a bias magnetic field, an erasure Bloch line pair having a rotation of magnetization opposite to that of the to-be-erased Bloch line pair is injected into the end portion of the stretched stripe domain by supplying a current pulse signal to a conductor arranged substantially perpendicualr to the lengthwise direction of the stripe domain, and the stretched stripe domain is shrinked by restoring the intensity of the bias magnetic field, so that the to-be-erased Bloch line pair is combined with the erasure Bloch line pair to cancel the former.

摘要翻译： 一种布洛赫线存储器件和一种擦除信息的方法，其中为了擦除代表一比特信息并位于一个条带域的一个端部中的布洛赫线对，条带域通过降低偏置强度而被拉伸 将具有与被擦除的布洛赫线对相反的磁化旋转的擦除布洛赫线对通过将电流脉冲信号提供给布置在基本上延伸的导体上而被注入延伸条带域的端部， 通过恢复偏置磁场的强度，条状域的长度方向和拉伸的条状域被收缩，使得被擦除的Bloch线对与擦除布洛赫线对组合以取消前者。

公开(公告)号：US4831584A

公开(公告)日：1989-05-16

申请号：US76215

申请日：1987-07-22

申请人： Youji Maruyama ,  Ryo Suzuki

发明人： Youji Maruyama ,  Ryo Suzuki

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0858

摘要： A Bloch line memory device in which a stripe magnetic domain is formed within a magnetic film for holding magnetic bubble domains, and Bloch line pairs are stored as information carriers within a magnetic wall defining the magnetic domain. In order to write Bloch lines into the magnetic wall of the stripe magnetic domain, current is caused to flow through a single conductor which is so disposed as to cross the magnetic wall of the stripe magnetic domain. On this occasion, the current through the single conductor is so directed as to generate an in-plane field opposite in sense to magnetization within the magnetic wall of the stripe magnetic domain.

公开(公告)号：US4755430A

公开(公告)日：1988-07-05

申请号：US12171

申请日：1987-02-09

申请人： Masatoshi Takeshita ,  Hiroshi Umezaki ,  Ryo Suzuki ,  Takashi Toyooka ,  Teruaki Takeuchi ,  Naoki Kodama

发明人： Masatoshi Takeshita ,  Hiroshi Umezaki ,  Ryo Suzuki ,  Takashi Toyooka ,  Teruaki Takeuchi ,  Naoki Kodama

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/08 ,  G11C19/0891 ,  Y10S428/90 ,  Y10T428/31504 ,  Y10T428/31518 ,  Y10T428/31522 ,  Y10T428/31663 ,  Y10T428/31681 ,  Y10T428/31688 ,  Y10T428/31721

摘要： A hybrid magnetic bubble memory device comprising soft magnetic material propagation tracks and ion-implanted propagation tracks. In the soft magnetic material propagation track region, a layer made of a heat-resistant polymer was provided as an interlaminar insulating layer between a conductor and a pattern of a soft magnetic material. An insulator film made of a heat-resistant polymer was provided on the pattern made of a soft magnetic material. A passivation film made of an inorganic material was provided on the ion-implanted propagation tracks and the insulator film made of a heat-resistant polymer.

摘要翻译： 一种混合磁气泡存储装置，包括软磁材料传播轨迹和离子注入传播轨道。 在软磁材料传播轨迹区域中，由导体和软磁性材料的图案之间的层间绝缘层提供由耐热聚合物制成的层。 在由软磁性材料制成的图案上设置由耐热聚合物制成的绝缘膜。 在离子注入的传播轨道和由耐热聚合物制成的绝缘膜上提供由无机材料制成的钝化膜。

公开(公告)号：US4744051A

公开(公告)日：1988-05-10

申请号：US752587

申请日：1985-07-08

申请人： Toshihiro Sato ,  Tadashi Ikeda ,  Ryo Suzuki ,  Teruaki Takeuchi

发明人： Toshihiro Sato ,  Tadashi Ikeda ,  Ryo Suzuki ,  Teruaki Takeuchi

IPC分类号： G11C19/08

CPC分类号： G11C19/0883

摘要： A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.

摘要翻译： 用于实现其实际使用的高存储密度的磁气泡存储装置通常由占据小环的大部分的离子注入元件和由软磁材料制成的其它元件组成。 具有较高密度的离子注入次环被折叠多次，并且包括彼此相邻并通过内部转弯连接的直线传播轨迹，而具有面向内侧转弯的外侧转弯的另一条直线传播轨道被放置在相邻直线 轨道

公开(公告)号：US4502129A

公开(公告)日：1985-02-26

申请号：US505486

申请日：1983-06-17

申请人： Ryo Suzuki ,  Minoru Hiroshima ,  Masatoshi Takeshita ,  Yutaka Sugita

发明人： Ryo Suzuki ,  Minoru Hiroshima ,  Masatoshi Takeshita ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0866

摘要： A magnetic bubble detector has a stretcher part for stretching a magnetic bubble while propagating it and a detection part for detecting the magnetic bubble while propagating it. In the magnetic bubble detector, the period of arrangement of bubble propagation elements forming the exit of the stretcher part viewed in a bubble propagation direction is larger than the period of arrangement of bubble propagation elements forming the entrance of the stretcher part viewed in a bubble propagation direction.

摘要翻译： 磁性气泡检测器具有用于在传播磁体的同时拉伸磁性气泡的担架部分和用于在传播时检测磁性气泡的检测部件。 在气泡检测器中，形成在气泡传播方向上观察的担架部分的出口的气泡传播元件的布置周期大于在气泡传播中观察到形成担架部分入口的气泡传播元件的布置周期 方向。

公开(公告)号：US4460412A

公开(公告)日：1984-07-17

申请号：US367675

申请日：1982-04-12

申请人： Ryo Imura ,  Tadashi Ikeda ,  Ryo Suzuki ,  Nagatugu Koiso ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Yutaka Sugita

发明人： Ryo Imura ,  Tadashi Ikeda ,  Ryo Suzuki ,  Nagatugu Koiso ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  H01F10/24 ,  H01F41/14 ,  H01F41/32 ,  H01F41/34 ,  H01L21/265 ,  C04B35/00 ,  G11C19/08

CPC分类号： H01F10/24 ,  H01F41/14 ,  H01F41/32 ,  H01F41/34

摘要： A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.

摘要翻译： 公开了一种用离子注入磁性石榴石膜的方法，其中在用于磁性气泡的单晶磁性石榴石膜上提供覆盖膜，并且通过覆盖物将氢离子注入到磁性石榴石膜的表面区域的期望部分中 电影。 根据该方法，可以形成离子注入层，其中在深度方向上的离子浓度分布是均匀的，此外，离子注入层中的面内各向异性场在退火中仅随时间降低一点 处理。