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    Ultra-high resolution pixel electrode arrangement structure and signal processing method
    1.
    发明授权
    Ultra-high resolution pixel electrode arrangement structure and signal processing method 失效
    超高分辨率像素电极排列结构和信号处理方法

    公开(公告)号：US07402811B2

    公开(公告)日：2008-07-22

    申请号：US10576413

    申请日：2004-10-20

    申请人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

    发明人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

    IPC分类号： G01T1/24

    CPC分类号： H04N5/349 ,  H04N5/32 ,  H04N5/3651

    摘要： When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed.If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.

    摘要翻译： 当用于检测高能X射线和γ射线的半导体传感器元件和放大器通过导线连接时，电容根据导线而变化，从而导致灵敏度变化。 为了解决这个问题，提出了一种使电容均匀化的结构。 如果以高分辨率使用交错布置，则通过布线的电容与元件不同，因此将虚拟传感器安装部分（2）设置到电极部分（3）以使电容均匀。 连接部分的宽度根据布线长度而减小，从而使电容均匀。

    Process for producing resonant tag
    3.
    发明授权
    Process for producing resonant tag 有权
    制造谐振标签的方法

    公开(公告)号：US06618939B2

    公开(公告)日：2003-09-16

    申请号：US09396277

    申请日：1999-09-15

    申请人： Shinya Uchibori ,  Takaaki Mizukawa ,  Yoshinori Hatanaka

    发明人： Shinya Uchibori ,  Takaaki Mizukawa ,  Yoshinori Hatanaka

    IPC分类号： H05K302

    CPC分类号： G08B13/242 ,  B32B2425/00 ,  B32B2519/02 ,  G06K19/07718 ,  G06K19/07749 ,  G08B13/2431 ,  G08B13/2437 ,  G08B13/244 ,  H01F5/003 ,  H01F41/041 ,  H05K3/041 ,  Y10S428/901 ,  Y10T29/49002 ,  Y10T29/49016 ,  Y10T29/49018 ,  Y10T29/49073 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/532 ,  Y10T428/24917 ,  Y10T428/2817 ,  Y10T428/31681

    摘要： A process for producing a resonant tag, wherein a metal foil having a thermal adhesion adhesive applied to at least one face thereof is stamped out into a circuit-like shape and is adhered to a base sheet, the process comprising: stamping out the metal foil into a predetermined shaped metal foil portion (4c) while being passed through a die roll (1) having thereon a stamping blade with a predetermined shape and a transfer roll (2) in contact with the die roll (1) which functions also as a die back-up roll; holding this metal foil portion obtained by the stamping-out operation onto the surface of the transfer roll by suction holes formed in the transfer roll; and thermally adhering the stamped metal foil portion to the base sheet (7) in contact with the transfer roll (2) at its another face by an adhesive roll (3) in contact with the transfer roll through the base sheet. The present invention has such advantages as no damage to the base sheet since the stamping-out operation for the metal foil and the thermal adhesion operation thereof to the base sheet are carried out in separate positions, and no requirement of carrier sheet because the resultant metal foil portion obtained by the stamping-out operation is sucked and held onto the surface of the transfer roll.

    摘要翻译： 一种用于制造谐振标签的方法，其中将具有涂覆在其至少一个表面上的热粘合粘合剂的金属箔冲压成电路状形状并粘附到基片上，该方法包括：冲压出金属箔 在通过其上具有预定形状的冲压刀片的模具辊（1）和与模具辊（1）接触的转印辊（2）的同时，进入预定形状的金属箔片部分（4c） 后备卷 将通过冲压操作获得的该金属箔部分通过形成在转印辊中的吸孔保持在转印辊的表面上; 并且通过与转印辊通过基片接触的粘合辊（3）将冲压的金属箔部分热粘合到与转印辊（2）接触的基片（7）。 本发明具有这样的优点，因为金属箔的冲压操作和对基片的热粘合操作对基片的损伤是在分开的位置进行的，并且不需要载体片，因为所得的金属 通过冲压操作获得的箔片部分被吸引并保持在转印辊的表面上。

    Planar display apparatus
    4.
    发明授权
    Planar display apparatus 失效
    平面显示装置

    公开(公告)号：US5495146A

    公开(公告)日：1996-02-27

    申请号：US007912

    申请日：1993-01-22

    申请人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Minoru Kobayashi ,  Susumu Hoshinouchi ,  Yoshinori Hatanaka

    发明人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Minoru Kobayashi ,  Susumu Hoshinouchi ,  Yoshinori Hatanaka

    IPC分类号： H01J31/12 ,  G09G3/10

    CPC分类号： H01J31/126

    摘要： Planar display devices which have a small thickness and used as a display unit of a television set, a monitor or the like. A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing them into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance by (1) providing a voltage applying means for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes, and so on.

    摘要翻译： 具有较小厚度并用作电视机，监视器等的显示单元的平面显示装置。 通过用导电膜涂覆绝缘基板并将其分成多个导电膜作为对照，形成用于使电子通过选自设置在绝缘基板上的多个电子通过孔中的给定电子通过孔的控制电极部分 电极。 这种结构消除了在绝缘基板上布置控制电极的情况下必需的电子的网格结构，从而实现了具有改善的亮度的高清晰度显示装置。 另外，具有通过在具有电子通过孔的导电性基板上形成绝缘膜而形成的表面绝缘基板的平面显示装置和配置在表面绝缘基板上的多个分立控制电极，能够防止充电 阻碍电子束通过的效果，并且因此通过（1）提供用于向导电衬底施加预定电压的电压施加装置来提高亮度，（2）提供导电衬底在 相邻的控制电极等。

    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same
    5.
    发明授权
    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same 失效
    具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件

    公开(公告)号：US06456639B2

    公开(公告)日：2002-09-24

    申请号：US09864758

    申请日：2001-05-24

    申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    IPC分类号： H01S500

    CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

    摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

    摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层和至少一部分碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

    Planar display apparatus having exposed insulated substrate portion
    7.
    发明授权
    Planar display apparatus having exposed insulated substrate portion 失效
    具有露出的绝缘基板部分的平面显示装置

    公开(公告)号：US5587627A

    公开(公告)日：1996-12-24

    申请号：US395703

    申请日：1995-02-28

    申请人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Minoru Kobayashi ,  Susumu Hoshinouchi ,  Yoshinori Hatanaka

    发明人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Minoru Kobayashi ,  Susumu Hoshinouchi ,  Yoshinori Hatanaka

    IPC分类号： H01J31/12 ,  H05B37/02

    CPC分类号： H01J31/126

    摘要： A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing the into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance at least by (1) providing a voltage applying circuit for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes.

    摘要翻译： 通过用导电膜涂覆绝缘基板并将其分成多个导电膜作为对照，形成用于使电子通过选自设置在绝缘基板上的多个电子通过孔中的给定电子通过孔的控制电极部分 电极。 这种结构消除了在绝缘基板上布置控制电极的情况下必需的电子的网格结构，从而实现了具有改善的亮度的高清晰度显示装置。 另外，具有通过在具有电子通过孔的导电性基板上形成绝缘膜而形成的表面绝缘基板的平面显示装置和配置在表面绝缘基板上的多个分立控制电极，能够防止充电 至少通过（1）提供用于向导电衬底施加预定电压的电压施加电路，（2）提供导电衬底露出的部分，从而阻止电子束通过，并因此提高亮度 在相邻的控制电极之间。

    Wide range radiation detector and manufacturing method
    8.
    发明授权
    Wide range radiation detector and manufacturing method 有权
    宽范围辐射探测器及制造方法

    公开(公告)号：US08044476B2

    公开(公告)日：2011-10-25

    申请号：US11454522

    申请日：2006-06-16

    申请人： Yoshinori Hatanaka ,  Toru Aoki

    发明人： Yoshinori Hatanaka ,  Toru Aoki

    IPC分类号： H01L31/00

    CPC分类号： H01L31/115 ,  H01L27/14661 ,  H01L27/14696

    摘要： A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.

    摘要翻译： 一种辐射检测器，包括吸收具有第一能量的辐射的II-VI化合物半导体衬底，设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层， 提供在II-VI化合物半导体层上的III族元素和V族元素中的至少一种，具有与金属层上提供的第一导电类型相反的第二导电类型的IV半导体层和吸收 具有与在IV半导体层上提供的第一能量不同的第二能量的辐射。

    Wide range radiation detector and manufacturing method
    10.
    发明申请
    Wide range radiation detector and manufacturing method 有权
    宽范围辐射探测器及制造方法

    公开(公告)号：US20070176200A1

    公开(公告)日：2007-08-02

    申请号：US11454522

    申请日：2006-06-16

    申请人： Yoshinori Hatanaka ,  Toru Aoki

    发明人： Yoshinori Hatanaka ,  Toru Aoki

    IPC分类号： H01L31/00 ,  H01L29/732

    CPC分类号： H01L31/115 ,  H01L27/14661 ,  H01L27/14696

    摘要： There is disclosed a radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different to the first energy provided on the IV semiconductor layer.

    摘要翻译： 公开了一种辐射检测器，其包括吸收具有第一能量的辐射的II-VI化合物半导体衬底，设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层，金属 含有设置在II-VI化合物半导体层上的III族元素和V族元素中的至少一种的层，具有与设置在金属层上的第一导电类型相反的第二导电类型的IV半导体层和IV半导体 吸收具有与IV半导体层上提供的第一能量不同的第二能量的辐射的衬底。