公开(公告)号：US6063673A

公开(公告)日：2000-05-16

申请号：US144512

申请日：1998-08-31

申请人： David Y. Kao ,  Jeff Zhiqiang Wu

发明人： David Y. Kao ,  Jeff Zhiqiang Wu

IPC分类号： H01L21/336 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L29/6659 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/7835

摘要： In one aspect, a method for forming a transistor device on a semiconductor substrate, comprising: a) forming a transistor gate on the substrate; b) forming a first polarity source active region and a first polarity drain active region operatively adjacent the transistor gate; and c) forming a second polarity internal junction region, the second polarity internal junction region being entirely received within one of the first polarity regions. In another aspect, a transistor device, comprising: a) a transistor gate on a semiconductor substrate; b) a first polarity source active region and a first polarity drain active region operatively adjacent the transistor gate; and c) a second polarity internal junction region entirely received within one of the first polarity regions. In yet another aspect, the invention includes a resistor, comprising: a) a gate on a semiconductor substrate, the gate being electrically powered with a gate voltage; b) a first polarity source active region and a first polarity drain active region operatively adjacent the electrically powered gate; c) a second polarity internal junction region entirely received within one of the first polarity regions; and d) a current between the first polarity source active region and the first polarity drain active region, the current being substantially linearly dependent on a voltage at the drain region.

摘要翻译： 一方面，一种在半导体衬底上形成晶体管器件的方法，包括：a）在衬底上形成晶体管栅极; b）形成与晶体管栅极可操作地相邻的第一极性源极有源区和第一极性漏极有源区; 以及c）形成第二极性内部结合区域，所述第二极性内部结合区域完全接收在所述第一极性区域之一内。 在另一方面，一种晶体管器件，包括：a）半导体衬底上的晶体管栅极; b）可操作地邻近晶体管栅极的第一极性源极有源区和第一极性漏极有源区; 以及c）完全接收在所述第一极性区域之一内的第二极性内部连接区域。 在另一方面，本发明包括一种电阻器，包括：a）半导体衬底上的栅极，栅极由栅极电压供电; b）第一极性源有源区和可操作地邻近电动门的第一极性漏极有源区; c）完全接收在所述第一极性区域之一内的第二极性内部连接区域; 以及d）所述第一极性源极活性区域和所述第一极性漏极有源区域之间的电流，所述电流基本上线性地取决于所述漏极区域处的电压。

公开(公告)号：US5763916A

公开(公告)日：1998-06-09

申请号：US639903

申请日：1996-04-19

申请人： Fernando Gonzalez ,  David Y. Kao

发明人： Fernando Gonzalez ,  David Y. Kao

IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/10873 ,  H01L27/10808

摘要： A MOS gate and associated source/drain region structure providing three junction diodes between a source/drain contact area and the substrate, instead of the typical total of one, resulting in improved isolation of a source/drain contact area and a storage node which may be formed thereat. For fabricate the structure, a source/drain region is formed in a substrate having a space charge in the bulk or major part thereof, the source/drain region including: a first region having a space charge with a polarity opposite that of a space charge in the major part of the substrate; a second region separated from the major part of the substrate by the first region and having a space charge with a polarity opposite that of the space charge of the first region; and a third region separated from the first region and the major part of the substrate by the second region and having a space charge with a polarity opposite that of the space charge of the second region. The first and second regions extend laterally under an associated gate. The third region extends laterally to the boundary of the region under the gate, and does not extend under the gate. The third region includes a portion of the surface of the substrate corresponding to a source/drain contact area. The source/drain region may be prepared by successive angled implants of alternating polarity. A storage node may then be formed above the third region.

摘要翻译： 一个MOS栅极和相关的源极/漏极区域结构，在源极/漏极接触区域和衬底之间提供三个结二极管，而不是典型的总共一个，从而改善了源/漏接触区域和存储节点的隔离， 在那里形成。 为了制造该结构，在其主体或主要部分中具有空间电荷的衬底中形成源极/漏极区域，源极/漏极区域包括：具有极性与空穴电荷极性相反的空间电荷的第一区域 在基材的主要部分; 第二区域，通过所述第一区域与所述衬底的主要部分分离并且具有极性与所述第一区域的空间电荷极性相反的空间电荷; 以及通过所述第二区域与所述第一区域和所述衬底的主要部分分离并且具有极性与所述第二区域的空间电荷极性相反的空间电荷的第三区域。 第一和第二区域横向延伸在相关门下。 第三区域横向延伸到栅极下方的区域的边界处，并且不延伸到栅极下方。 第三区域包括对应于源极/漏极接触区域的衬底表面的一部分。 源极/漏极区域可以通过交替极性的连续倾斜的植入物来制备。 然后可以在第三区域上方形成存储节点。