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公开(公告)号：US20120080171A1
公开(公告)日：2012-04-05
申请号：US13225883
申请日：2011-09-06
IPC分类号： F28D15/04
CPC分类号： F28D15/0233 , H01L23/427 , H01L2924/0002 , H05K7/20336 , H01L2924/00
摘要： A heat relay mechanism includes a heat-dissipating member for dissipating heat, a buffer member contacted with the heat-dissipating member at a first surface, a thermally deformable member connected to a second surface of the buffer member and deforms at a high temperature, a heat pipe connected to the thermally deformable member at one end, and a device connected to another end of the heat pipe.
摘要翻译： 热继电器机构包括用于散热的散热构件，在第一表面与散热构件接触的缓冲构件，与缓冲构件的第二表面连接并在高温下变形的热变形构件， 在一端连接到可热变形构件的热管，以及连接到热管的另一端的装置。
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公开(公告)号：US08072026B2
公开(公告)日：2011-12-06
申请号：US12659454
申请日：2010-03-09
IPC分类号： H01L29/76 , H01L29/94 , H01L31/113 , H01L31/119 , H01L29/00
CPC分类号： H01L29/7813 , H01L29/4236 , H01L29/66734
摘要： A semiconductor device, includes a semiconductor layer of a second conductive type, a first diffused region of a first conductive type formed in the semiconductor layer, a second diffused region of the second conductive type selectively formed in the first diffused region, a trench formed in the semiconductor layer, a polysilicon formed in the trench with an insulator intervening, a first oxide film formed on the polysilicon so that the first oxide film is buried in the trench, a second oxide film formed on the first oxide film so that the second oxide film is buried in the trench, and a flowable insulator film formed on the second oxide film so that the flowable insulator film is buried in the trench.
摘要翻译： 一种半导体器件，包括第二导电类型的半导体层，形成在半导体层中的第一导电类型的第一扩散区域，选择性地形成在第一扩散区域中的第二导电类型的第二扩散区域，形成在 半导体层，形成在具有绝缘体的沟槽中的多晶硅，形成在多晶硅上的第一氧化物膜，使得第一氧化物膜被埋在沟槽中，形成在第一氧化物膜上的第二氧化物膜，使得第二氧化物 膜被埋在沟槽中，以及形成在第二氧化物膜上的可流动的绝缘膜，使得可流动的绝缘膜被埋在沟槽中。
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公开(公告)号：US07947556B2
公开(公告)日：2011-05-24
申请号：US12801806
申请日：2010-06-25
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/4236 , H01L29/66734
摘要： A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance.
摘要翻译： 一种制造半导体装置的方法包括在半导体层中形成沟槽，在沟槽内部形成栅电极，在沟槽内部的栅电极上形成热氧化膜，在内部的热氧化膜上形成硅酸盐玻璃膜 沟槽，在半导体层内部形成体区，并且在身体区域上形成源区。 该方法提供了具有减小的通道长度波动和低导通电阻的半导体装置。
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公开(公告)号：US20100270749A1
公开(公告)日：2010-10-28
申请号：US12743602
申请日：2008-11-18
申请人： Yoji Oshii , Koji Akiyama , Koji Watanabe , Atsushi Kaneko
发明人： Yoji Oshii , Koji Akiyama , Koji Watanabe , Atsushi Kaneko
IPC分类号： F16J15/34
CPC分类号： F16J15/342 , F16J15/004 , F16J15/3484 , F16J15/40
摘要： The present invention provides a mechanical seal device for obtaining appropriate sliding properties under any conditions, such as a pressure of seal is low or high. In the present invention, both first grooves 463 and second grooves 464 are formed on a sliding face 46 of a stationary ring 46. The first grooves which are not in communication externally and act for reducing contact resistance of a sliding face by a dynamic pressure action when a rotary shaft rotates, the second grooves act for reducing the contact resistance of the sliding face constantly by introducing a pressure from external. Thus, a mechanical seal device which is available to seal sealed fluid under an appropriate dry contact status wherein a sliding face load is reduced in any condition can be provided.
摘要翻译： 本发明提供一种用于在任何条件下获得适当的滑动性能的机械密封装置，例如密封压力低或高。 在本发明中，第一凹槽463和第二凹槽464都形成在静止环46的滑动面46上。第一凹槽不与外部连通，并且用于通过动态压力作用降低滑动面的接触电阻 当旋转轴旋转时，第二凹槽用于通过从外部引入压力来恒定地降低滑动面的接触电阻。 因此，可以提供在适当的干接触状态下可用于密封密封流体的机械密封装置，其中在任何情况下滑动面负载减小。
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公开(公告)号：US07776693B2
公开(公告)日：2010-08-17
申请号：US11905078
申请日：2007-09-27
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/4236 , H01L29/66734
摘要： A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance.
摘要翻译： 一种制造半导体装置的方法包括在半导体层中形成沟槽，在沟槽内部形成栅电极，在沟槽内部的栅电极上形成热氧化膜，在内部的热氧化膜上形成硅酸盐玻璃膜 沟槽，在半导体层内部形成体区，并且在身体区域上形成源区。 该方法提供了具有减小的通道长度波动和低导通电阻的半导体装置。
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公开(公告)号：US07704827B2
公开(公告)日：2010-04-27
申请号：US11984043
申请日：2007-11-13
IPC分类号： H01L21/8242
CPC分类号： H01L29/7813 , H01L29/4236 , H01L29/66734
摘要： An epitaxial layer is formed on an n+ semiconductor substrate by epitaxial growth. A gate trench is formed to the surface of gate trench so that the bottom of gate trench reaches middle of the epitaxial layer. A gate insulator is formed on the inner wall of gate trench and a polysilicon is formed in the gate trench with the gate insulator interposed therebetween. An HTO film is formed on the surface of the polysilicon and the n− epitaxial layer. At this time, an ion plantation is performed to the epitaxial layer through the HTO film. Hence, a p diffused base layer, an n+ diffused source layer, an n+ diffused source layer is formed. A CVD oxide film is formed on the HTO film. After a BPSG having flowability is deposited on the CVD oxide film, the BPSG film is planarized with a heat treatment of 900-1100 degree Celsius.
摘要翻译： 通过外延生长在n +半导体衬底上形成外延层。 栅极沟槽形成在栅极沟槽的表面，使得栅极沟槽的底部到达外延层的中间。 栅极绝缘体形成在栅极沟槽的内壁上，并且栅极沟槽中形成多晶硅，栅极绝缘体插入其间。 在多晶硅和n外延层的表面上形成HTO膜。 此时，通过HTO膜对外延层进行离子种植。 因此，形成p扩散基极层，n +扩散源极层，n +扩散源极层。 在HTO膜上形成CVD氧化膜。 在具有流动性的BPSG沉积在CVD氧化物膜上之后，通过900-1100摄氏度的热处理将BPSG膜平坦化。
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公开(公告)号：US20090057723A1
公开(公告)日：2009-03-05
申请号：US12199913
申请日：2008-08-28
申请人： Atsushi Kaneko , Yasuo Okada
发明人： Atsushi Kaneko , Yasuo Okada
IPC分类号： H01L29/76
CPC分类号： H01L23/62 , H01L24/48 , H01L24/49 , H01L25/18 , H01L2224/32145 , H01L2224/48145 , H01L2224/48147 , H01L2224/49175 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2924/00014 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device including a plurality of semiconductor elements, a substrate on which the plurality of semiconductor elements are mounted, the substrate also having a plurality of terminals for connecting to external equipment, a fuse mounted on the outside of a mounting area of the plurality of semiconductor elements and mounted on a surface of the substrate near a power supply terminal among the plurality of terminals, and the power supply terminal and the plurality of semiconductor elements are connected via the fuse.
摘要翻译： 一种半导体器件，包括多个半导体元件，其上安装有多个半导体元件的基板，所述基板还具有用于连接到外部设备的多个端子，安装在所述多个半导体元件的安装区域的外部的保险丝 半导体元件，并且安装在多个端子中的电源端子附近的基板的表面上，并且电源端子和多个半导体元件经由保险丝连接。
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公开(公告)号：US20080081422A1
公开(公告)日：2008-04-03
申请号：US11905078
申请日：2007-09-27
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/4236 , H01L29/66734
摘要： A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance.
摘要翻译： 一种制造半导体装置的方法包括在半导体层中形成沟槽，在沟槽内部形成栅电极，在沟槽内部的栅电极上形成热氧化膜，在内部的热氧化膜上形成硅酸盐玻璃膜 沟槽，在半导体层内部形成体区，并且在身体区域上形成源区。 该方法提供了具有减小的通道长度波动和低导通电阻的半导体装置。
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公开(公告)号：US20050167956A1
公开(公告)日：2005-08-04
申请号：US11041117
申请日：2005-01-21
申请人： Mitsuo Yasuda , Atsushi Kaneko , Yusuke Ishikuro
发明人： Mitsuo Yasuda , Atsushi Kaneko , Yusuke Ishikuro
IPC分类号： B60R21/20 , B60R21/215
CPC分类号： B60R21/2165 , B60R21/205
摘要： An airbag apparatus uses an interior panel of an automobile. The interior panel is formed of a multi-layer sheet including a surface layer, an intermediate foam layer, and a base layer. The interior panel has front and rear hinge grooves and left and right fracture grooves for defining a fracture-opening section, and a center fracture groove for dividing the fracture-opening section into front and rear fracture-opening subsections to be split apart from each other in a casement condition. The hinge grooves, the center fracture groove, and the left and right fracture grooves are formed of laser-machined holes which have different depths and do not pass through the surface layer of the interior panel.
摘要翻译： 气囊装置使用汽车的内部面板。 内部面板由包括表面层，中间泡沫层和基底层的多层片材形成。 内侧面板具有前后铰链槽和用于限定断裂开口部的左右断裂槽和用于将断裂开口部分分成前后断裂开口部分以将其彼此分离的中心断裂槽 在分箱条件下。 铰链槽，中心断裂槽和左右裂缝槽由具有不同深度并且不穿过内板的表面层的激光加工孔形成。
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公开(公告)号：US20050124401A1
公开(公告)日：2005-06-09
申请号：US11002622
申请日：2004-12-03
申请人： Toshiharu Izuno , Atsushi Kaneko , Masataka Sato
发明人： Toshiharu Izuno , Atsushi Kaneko , Masataka Sato
摘要： A game apparatus includes a game machine and a game cartridge. On a case of the game machine, operation buttons are provided. On the LCD, game images of a player object and non-player objects in a game space are displayed. For example, a player, by holding the case with both hands and operating the operation buttons, controls a holding action of a left hand and a right hand of the player object. When the player instructs the player object to perform the holding action, if the non-player object exists at a position where the hand of the player object exists, the non-player object is held. In a case that the player object holds the non-player object with one hand, the player object rotates, and by changing the non-player object to be held, the player object can move within the game space. Furthermore, if releasing the hand from it during the rotation, the player object jumps out.
摘要翻译： 游戏机包括游戏机和游戏机。 在游戏机的情况下，提供操作按钮。 在LCD上，显示玩家对象和游戏空间中的非玩家对象的游戏图像。 例如，玩家通过用双手握住外壳并操作操作按钮来控制玩家对象的左手和右手的保持动作。 当玩家指示玩家对象执行保持动作时，如果非玩家对象存在于玩家对象的手的位置，则保持非玩家对象。 在玩家对象用一只手握住非玩家对象的情况下，玩家对象旋转，并且通过改变要保持的非玩家对象，玩家对象可以在游戏空间内移动。 此外，如果在旋转期间释放手，则玩家对象跳出。
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