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90 条记录 (耗时 0.032 秒)

    Magnetic memory
    32.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06765821B2

    公开(公告)日：2004-07-20

    申请号：US10662533

    申请日：2003-09-16

    申请人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

    发明人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

    IPC分类号： G11C1114

    CPC分类号： G11C11/15

    摘要： There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.

    摘要翻译： 提供了至少一根导线，一个磁阻效应元件，其具有存储层，其磁化方向根据通过使电流在线中流动而产生的电流磁场而变化，并且第一磁轭设置成与至少一个 磁阻效应元件的一对相对的侧面，当电流在电线中流动时与磁阻效应元件协同地形成磁路。 每个第一轭具有至少两个通过非磁性层堆叠的软磁性层。

    Magneto-resistance effect element and magnetic memory
    33.
    发明授权
    Magneto-resistance effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US07266011B2

    公开(公告)日：2007-09-04

    申请号：US11368496

    申请日：2006-03-07

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： G11C11/15

    摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

    摘要翻译： 磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

    Magneto-resistance effect element and magnetic memory
    34.
    发明授权
    Magneto-resistance effect element and magnetic memory 失效
    磁阻效应元件和磁存储器

    公开(公告)号：US07038939B2

    公开(公告)日：2006-05-02

    申请号：US10696000

    申请日：2003-10-30

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： G11C11/15

    摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

    摘要翻译： 磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

    Method for producing magnetic memory device
    36.
    发明授权
    Method for producing magnetic memory device 失效

    公开(公告)号：US07041603B2

    公开(公告)日：2006-05-09

    申请号：US10396435

    申请日：2003-03-26

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    IPC分类号： H01L21/302

    CPC分类号： G11C11/15 ,  Y10T29/49021

    摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

    Magnetic memory device and method of manufacturing the same
    37.
    发明授权
    Magnetic memory device and method of manufacturing the same 有权
    磁记忆体装置及其制造方法

    公开(公告)号：US07291506B2

    公开(公告)日：2007-11-06

    申请号：US11171323

    申请日：2005-07-01

    申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

    发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

    IPC分类号： H01L21/00

    CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

    摘要翻译： 一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障 层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁 电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。

    Magnetic memory device having yoke layer
    40.
    发明授权
    Magnetic memory device having yoke layer 有权
    具有轭层的磁存储器件

    公开(公告)号：US06879515B2

    公开(公告)日：2005-04-12

    申请号：US10926047

    申请日：2004-08-26

    申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

    摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。