摘要:
A driving method for a solid-state image pick up device that includes the steps of capturing an image with the pixel array, sharing at least two color pixel cells with a floating diffusion unit, adding an output signal of a first color pixel cell to an output signal of a second color pixel cell having the same color as the first color pixel cell with the floating diffusion unit in order to create a virtual pixel center, and controlling a ratio of integration time of the color pixel cells to the same colors based on pitches between virtual pixel centers with a control unit.
摘要:
A solid-state imaging device includes a pixel array in which a plurality of pixel cells, each of which includes a plurality of photoelectric conversion elements, is arranged, and an adder for performing an addition operation on a plurality of signals output from the photoelectric conversion elements of the pixel array in a predetermined combination of the photoelectric conversion elements, while setting between the signals to be added a ratio determined according to the arrangement of the photoelectric conversion elements.
摘要:
A solid-state imaging device with a multi-pixel sharing structure, wherein the area of each photoelectric conversion element can be secured independent of a reduction in area of each pixel. A solid-state imaging device including photoelectric conversion elements arranged in a two-dimensional array and voltage conversion elements for converting charge produced by photoelectric conversion through the corresponding photoelectric conversion elements into voltage.
摘要:
A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
摘要:
Disclosed is a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.
摘要:
A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.
摘要:
Disclosed is a solid-state imaging device including a photoelectric conversion portion photoelectrically converting incident light into signal charge and accumulate the signal charge, a plurality of signal lines including a transfer signal line to which a transfer signal for reading the signal charge accumulated in the photoelectric conversion portion to a floating diffusion region is input, a driver circuit inputting a plurality of desired signals into the plurality of signal lines including the transfer signal line, and a terminal circuit connected to a side opposite to a side of the transfer signal line where the driver circuit is connected and to which a control signal for securing the transfer signal line at a constant voltage is input before a desired signal of the plurality of desired signals with respect to a signal line adjacent to the transfer signal line of the plurality of signal lines is input to the signal line adjacent to the transfer signal line.
摘要:
A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.
摘要:
A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
摘要:
Disclosed is a solid-state imaging device which includes a group of elements, the group including at least color photoelectric conversion elements configured to convert light signals in first, second, and third wavelength ranges to electric signals, respectively, a white photoelectric conversion element configured to convert light signals in the wavelength range including the entire visible light range and a portion of the infrared light range to electric signals, and a light-shielded diode element configured to be shielded from light. A unit is formed by including the white photoelectric conversion element and the light-shielded diode element for one color photoelectric conversion element, and within the unit, the white photoelectric conversion element is electrically connected with the light-shielded diode element by way of an overflow path. A camera provided with the solid-state imaging device is also disclosed.