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    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
    33.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS 有权
    转子转矩记忆自读参考读写方法

    公开(公告)号：US20110026317A1

    公开(公告)日：2011-02-03

    申请号：US12903305

    申请日：2010-10-13

    申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。 然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高 电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

    MAGNETIC SENSOR WITH PERPENDICULAR ANISOTROPHY FREE LAYER AND SIDE SHIELDS
    34.
    发明申请
    MAGNETIC SENSOR WITH PERPENDICULAR ANISOTROPHY FREE LAYER AND SIDE SHIELDS 有权
    具有独立自由层和边界的磁传感器

    公开(公告)号：US20110007429A1

    公开(公告)日：2011-01-13

    申请号：US12502204

    申请日：2009-07-13

    申请人： Dimitar V. Dimitrov ,  Zheng Gao ,  Wonjoon Jung ,  Paul Edward Anderson ,  Olle Gunnar Heinonen

    发明人： Dimitar V. Dimitrov ,  Zheng Gao ,  Wonjoon Jung ,  Paul Edward Anderson ,  Olle Gunnar Heinonen

    IPC分类号： G11B5/127

    CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3912 ,  H01L43/08

    摘要： A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.

    摘要翻译： 隧道磁阻读取器包括将顶部磁屏蔽与底部磁屏蔽分开的传感器堆叠。 传感器堆叠包括具有参考磁化取向方向的参考磁性元件和具有基本上垂直于参考磁化定向方向的自由磁化取向方向的自由磁性元件。 非磁性间隔层将参考磁性元件与自由磁性元件分开。 第一侧磁屏蔽和第二侧磁屏蔽设置在顶部磁屏蔽与底部磁屏蔽之间，传感器堆叠位于第一侧磁屏蔽和第二侧磁屏蔽之间。 第一侧磁屏蔽和第二侧磁屏蔽将顶部磁屏蔽与底部磁屏蔽电绝缘。

    Magnetic sensing device including a sense enhancing layer
    36.
    发明申请
    Magnetic sensing device including a sense enhancing layer 有权
    磁感测装置包括感应增强层

    公开(公告)号：US20070139827A1

    公开(公告)日：2007-06-21

    申请号：US11305778

    申请日：2005-12-16

    申请人： Zheng Gao ,  Brian Karr ,  Song Xue ,  Eric Granstrom ,  Khuong Tran ,  Yi Li

    发明人： Zheng Gao ,  Brian Karr ,  Song Xue ,  Eric Granstrom ,  Khuong Tran ,  Yi Li

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121

    摘要： A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.

    摘要翻译： 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和第二磁性部分中的至少一个包括多层结构，其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层 层。 磁传感器具有至少约80％的MR比，当磁传感器的电阻面积（RA）乘积约为1.0欧姆/平方毫米时。

    ESD path for connector receptacle
    39.
    发明授权
    ESD path for connector receptacle 有权
    连接器插座的ESD路径

    公开(公告)号：US09011176B2

    公开(公告)日：2015-04-21

    申请号：US13492813

    申请日：2012-06-09

    申请人： George Tziviskos ,  Zheng Gao

    发明人： George Tziviskos ,  Zheng Gao

    IPC分类号： H01R13/648 ,  H01R12/50 ,  H01R13/658

    CPC分类号： H01R23/6873 ,  H01R13/6205 ,  H01R13/65802 ,  H01R13/6594 ,  H01R13/6596 ,  H05K5/0247 ,  H05K9/0066 ,  H05K9/0067

    摘要： Circuits, methods, and apparatus that may provide a separation between a signal ground and an enclosure ground such that EMI and ESD circuits are not bypassed. One example may provide a connector receptacle having fingers for contacting a device enclosure, where the fingers are not directly electrically connected to a shell of the connector receptacle. These fingers may be isolated from the shell along a top-side by an electrically insulating layer. These fingers may be further insulated from the shell along a back side by a nonconductive piece or portion of a housing.

    摘要翻译： 电路，方法和装置，可以提供信号地和外壳接地之间的隔离，使EMI和ESD电路不被旁路。 一个示例可以提供具有用于接触设备外壳的指状物的连接器插座，其中手指不直接电连接到连接器插座的外壳。 这些指状物可以通过电绝缘层沿着顶部与壳体隔离。 这些指状物可以通过非导电片或壳体的一部分沿背侧与壳体进一步绝缘。