公开(公告)号：US07940038B2

公开(公告)日：2011-05-10

申请号：US12297954

申请日：2007-04-18

Applicant: Marco Jose Da Silva ,  Eckhard Schleicher ,  Uwe Hampel ,  Horst-Michael Prasser

Inventor： Marco Jose Da Silva ,  Eckhard Schleicher ,  Uwe Hampel ,  Horst-Michael Prasser

IPC: G01R31/02 ,  G01R27/26 ,  G01R27/08

CPC classification number: G01N27/07 ,  G01N33/2823

Abstract: Disclosed is an arrangement for quickly measuring the phase distribution or the component distribution in a flow cross section for substance mixtures also of a non-conducting type by measuring the complex electrical admittance. Said arrangement essentially features the following: at least one sine wave generator (5) which is mounted upstream from the transmitter electrodes (3a) of the excitation level and applies an alternating voltage to the transmitter electrodes (3a); current-to-voltage converters (7) which are mounted downstream from the receiver electrodes (3b), amplify the alternating current that flows from at least one excitation electrode (3a) through the medium to the receiver electrodes (3b), and convert said alternating current into a voltage signal; filter groups (10, 11, 16) and vector voltmeters (8) which are mounted downstream from the current-to-voltage converters (7) and allow the complex signal ratio Ua/Ue to be metrologically detected.

Abstract translation: 公开了一种用于通过测量复电导纳来快速测量不导电类型的物质混合物的流动横截面中的相分布或部件分布的装置。 所述布置基本上具有以下特点：至少一个正弦波发生器（5），其安装在激发电平的发射器电极（3a）的上游，并向发射器电极（3a）施加交流电压; 安装在接收器电极（3b）下游的电流 - 电压转换器（7）将从至少一个激励电极（3a）流过介质的交流电流放大到接收器电极（3b），并将所述 交流电成电压信号; 滤波器组（10,11,16）和矢量电压表（8），其安装在电流 - 电压转换器（7）的下游，并允许计量地检测复信号比Ua / Ue。

公开(公告)号：US20250144253A1

公开(公告)日：2025-05-08

申请号：US18716251

申请日：2022-12-05

Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

Inventor： Sven STADLBAUER ,  Fabian KRUTZEK ,  Klaus KOPKA

IPC: A61K51/04

Abstract: A compound of general formula I where Z is selected from the group containing a group of general formula II, a group of general formula III, a group of general formula IV, a group of general formula V, a group of general formula VI, and a group of general formula VIa:

公开(公告)号：US20240247966A1

公开(公告)日：2024-07-25

申请号：US18573442

申请日：2022-06-21

Applicant: Helmholtz-Zentrum Dresden - Rossendorf e.V.

Inventor： Eckhard SCHLEICHER ,  Felipe DE ASSIS DIAS ,  Martin LÖSCHAU ,  Marco Jose DA SILVA

IPC: G01F25/00 ,  G01D21/00

CPC classification number: G01F25/00 ,  G01D21/00

Abstract: Disclosed herein is a grid sensor, a grid sensor system, a measuring device, and a computer program for correcting an interference caused by one or more fluids. The grid sensor includes a fluid guide region, an electrode, a reference element, and a plurality of grid sensor units, each of which include a group of sensor elements configured to generate measurement signals representing one or more properties of a fluid guided in the fluid guide region. The sensor elements are connected to the electrode for operating the sensor elements. The reference element is associated with the electrode, connected to the electrode, and configured to provide a reference signal representing an interference from the fluid guided in the fluid guide region on an electrical characteristic of the electrode.

公开(公告)号：US11912969B2

公开(公告)日：2024-02-27

申请号：US17044592

申请日：2019-04-03

Applicant: HELMHOLTZ-ZENTRUM DRESDEN - ROSSENDORF E.V.

Inventor： Heidemarie Schmidt ,  Ilona Skorupa ,  Katarzyna Wiesenhütter ,  Lars Rebohle

IPC: C12M1/22 ,  B01L3/00 ,  C12M1/24 ,  C12M1/00 ,  C12M1/34 ,  G01N27/22

CPC classification number: C12M23/10 ,  B01L3/5085 ,  C12M23/08 ,  C12M23/22 ,  C12M41/00 ,  G01N27/226 ,  B01L2300/0645 ,  B01L2300/0822 ,  B01L2300/0829 ,  B01L2300/168

Abstract: A transparent specimen slide on which the range and the magnitude of the near-surface electrostatic forces can be influenced and set during a process of producing the specimen slide. The specimen slide has a surface on the supporting side and a surface facing away from the supporting side and at least three layers: an electrically insulating first layer, a silicon-containing second layer arranged on the first layer, and an electrically insulating third layer arranged on the second layer. An interface is formed between the first and second layers and between the second and third layers with a first surface charge density. The interface between the second and third layers has a second surface charge density. The first and second surface charge densities have the same or different signs.

公开(公告)号：US20230095104A1

公开(公告)日：2023-03-30

申请号：US17620848

申请日：2020-06-22

Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V. ,  ROTOP PHARMAKA GMBH

Inventor： Thu Hang LAI ,  Rodrigo TEODORO ,  Magali TOUSSAINT ,  Daniel GÜNDEL ,  Winnie DEUTHER-CONRAD ,  Sladjana DUKIC-STEFANOVIC ,  Susann SCHRÖDER ,  Rares-Petru MOLDOVAN ,  Peter BRUST

IPC: C07D487/14

Abstract: A compound of general formula I Residues X1a, X1b, X2a, X2b, X3a, X3b, X4a, X4b, X5a, and X5b each independently are hydrogen or deuterium, with the provision that at least one of residues X1a, X1b, X2a, X2b, X3a, X3b, X4a, X4b, X5a, and X5b is deuterium.

公开(公告)号：US20220223855A1

公开(公告)日：2022-07-14

申请号：US17709496

申请日：2022-03-31

Applicant: ROVAK GmbH ,  Technische Universitaet Bergakademie Freiberg ,  Helmholtz-Zentrum Dresden-Rossendorf e.V.

Inventor： Charaf CHERKOUK ,  Dirk C. MEYER ,  Tilmann LEISEGANG ,  Teresa Orellana PEREZ ,  Slawomir PRUCNAL ,  Wolfgang SKORUPA

IPC: H01M4/38 ,  H01M4/04 ,  H01M4/134

Abstract: A method for producing silicon-based anodes for secondary batteries carries out the following steps for producing an anode: —depositing a silicon layer on a metal substrate having grain boundaries, wherein the silicon layer has a first boundary surface directed towards the metal substrate, —heating the metal substrate using a heating unit to a temperature between 200° C. and 1000° C., —conditioning the region of the second boundary surface of the silicon layer that is facing away from the metal substrate using an energy-intensive irradiation during the heating, generating polyphases in the region of the silicon layer and the metal substrate, made up of amorphous silicon and/or crystalline silicon of the silicon of the silicon layer and of crystalline metal of the metal substrate and of silicide and—generating crystalline metal of the metal substrate.

公开(公告)号：US11355749B2

公开(公告)日：2022-06-07

申请号：US16077963

申请日：2017-02-10

Applicant: ROVAK GmbH ,  Technische Universitaet Bergakademie Freiberg ,  Helmholtz-Zentrum Dresden-Rossendorf e.V.

Inventor： Charaf Cherkouk ,  Dirk C. Meyer ,  Tilmann Leisegang ,  Teresa Orellana Perez ,  Slawomir Prucnal ,  Wolfgang Skorupa

IPC: H01M4/38 ,  H01M4/04 ,  H01M4/134

Abstract: A method for producing silicon-based anodes for secondary batteries carries out the following steps for producing an anode: —depositing a silicon layer on a metal substrate having grain boundaries, wherein the silicon layer has a first boundary surface directed towards the metal substrate, —heating the metal substrate using a heating unit to a temperature between 200° C. and 1000° C., —conditioning the region of the second boundary surface of the silicon layer that is facing away from the metal substrate using an energy-intensive irradiation during the heating, —generating polyphases in the region of the silicon layer and the metal substrate, made up of amorphous silicon and/or crystalline silicon of the silicon of the silicon layer and of crystalline metal of the metal substrate and of silicide and—generating crystalline metal of the metal substrate.

公开(公告)号：US11098300B2

公开(公告)日：2021-08-24

申请号：US16959841

申请日：2019-02-21

Applicant: TECHNISCHE UNIVERSITÄT DRESDEN ,  HELMHOLTZ-ZENTRUM DRESDEN—ROSSENDORF E.V.

Inventor： Karim Fahmy ,  Thorsten-Lars Schmidt ,  Katarina Iric

IPC: C12N15/09 ,  C12N15/10 ,  G01N21/552 ,  G01N29/02 ,  G01N30/02 ,  G01N30/38

Abstract: The present invention relates to a method for the preparation of nanoscale nucleic acid-encircled lipid bilayers, the nanoscale nucleic acid-encircled lipid bilayers and their use.

公开(公告)号：US20210231595A1

公开(公告)日：2021-07-29

申请号：US16981735

申请日：2019-03-19

Applicant: HELMHOLTZ-ZENTRUM DRESDEN - ROSSENDORF E.V.

Inventor： Tobias KOSUB

IPC: G01N27/04 ,  G01R27/28 ,  G01R27/08

Abstract: A method for continuously determining all of the components of the resistance tensor of thin films, such as thin film resistors and thin film sensors of all types, is disclosed. A continuous determination of all the components of the resistance tensor is facilitated without switching the contact points using a minimum number of contacts. A homogeneous thin film part of any shape is provided with a least three contact points arranged at distances from one another. An input voltage is applied at each of the contact points, the current flowing through the contact points are detected, and the complete resistance tensor of the thin film part is determined from the voltage and current values.

公开(公告)号：US20210228748A1

公开(公告)日：2021-07-29

申请号：US17159968

申请日：2021-01-27

Applicant: HELMHOLTZ-ZENTRUM DRESDEN - ROSSENDORF E.V.

Inventor： Hans-Jürgen PIETZSCH ,  Martin WALTHER ,  Thomas WÜNSCHE

IPC: A61K51/04 ,  C07B59/00 ,  C07F3/14 ,  C07F17/02 ,  C07F3/12 ,  A61K47/68

Abstract: The present invention relates to in vivo stable 197(m)Hg compounds according to formula (E) for use in nuclear medical diagnostics and endoradionuclide therapy (theranostics), particularly the treatment of cancer, a method for the production of the 197(m)Hg compounds comprising the step of radiolabeling of organic precursor compounds with NCA 197(m)Hg by electrophilic substitution; and the use of the 197(m)Hg compounds for nuclear medical diagnostics and endoradionuclide therapy (theranostics), particularly the treatment of cancer.