公开(公告)号：US20020151247A1

公开(公告)日：2002-10-17

申请号：US10164398

申请日：2002-06-10

Inventor： Yoshihiro Yanagisawa

IPC: H01J009/04

CPC classification number: H01J9/32 ,  Y10T29/49099 ,  Y10T29/4913

Abstract: An airtight vessel is formed with restraining a vacuum leak and without increase in the number of steps. Provided is a method for producing an image-forming apparatus comprising the airtight vessel in which a rear plate having an electron-emitting device and a wire connected to the element, and a face plate having an electrode are joined to each other through a jointing material, the method comprising the following steps: (A) a first step of forming a first wire which is a part of the wire and which passes through the joint part to connect the inside of the vessel to the outside, by applying a paste comprising particles of an electric conductor and baking the paste; and (B) a second step of forming a second wire located in the vessel, by applying a paste comprising particles of an electric conductor so as to be connected to the first wire inside the vessel and baking the paste, after formation of the first wire.

Abstract translation: 形成密闭容器，限制真空泄漏并且不增加步骤数量。 提供了一种用于制造图像形成装置的方法，该图像形成装置包括气密容器，其中具有电子发射器件的背板和连接到元件的电线以及具有电极的面板通过接合材料彼此接合 该方法包括以下步骤：（A）形成第一线材的第一步骤，该第一线材是作为线材的一部分并且通过接合部分以将容器的内部连接到外部的第一线，通过施加包含颗粒的糊料 的电导体并烘烤糊状物; 和（B）形成位于容器中的第二丝线的第二步骤，通过施加包含导电体颗粒的糊料，以便连接到容器内的第一丝线并烘烤糊料，在形成第一丝线之后 。

公开(公告)号：US20040263044A1

公开(公告)日：2004-12-30

申请号：US10821266

申请日：2004-04-08

Inventor： Tae-Ill Yoon ,  Jong-Woon Moon ,  Sung-Hee Cho ,  Sung-Kee Kang ,  Hun-Young Kim ,  Hyun-Jung Lee

IPC: H01J001/05 ,  H01J001/14 ,  H01J009/14 ,  H01J009/04

CPC classification number: B82Y30/00 ,  B22F1/0007 ,  B22F1/025 ,  B22F9/24 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446

Abstract: Disclosed is a carbon-based composite particle for an electron emission source comprising: a particle of a material selected from the group consisting of metals, oxides, and ceramic materials; and a carbon-based material such as a carbon nanotube which is partially buried inside of the particle and which partially protrudes from the surface of the particle.

Abstract translation: 公开了一种用于电子发射源的碳基复合颗粒，包括：选自金属，氧化物和陶瓷材料的材料的颗粒; 以及碳粒子等碳系材料，其部分地埋设在粒子的内部，并从粒子的表面部分地突出。

公开(公告)号：US20040253898A1

公开(公告)日：2004-12-16

申请号：US10758193

申请日：2004-01-16

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yoji Teramoto

IPC: H01J009/00 ,  H01J009/04

CPC classification number: H01J9/025

Abstract: To provide a method of manufacturing an electron-emitting device, which has an easy manufacturing process and preferably controls an electron beam diameter. The method of manufacturing an electron-emitting device includes: arranging on a substrate a member comprising a first electroconductive layer blanketing the substrate, a layer containing at least one of materials composing an electron-emitting element blanketing the first electroconductive layer, a protective layer blanketing the layer containing at least one of materials composing an electron-emitting element, a second electroconductive layer blanketing the protective layer, an insulating layer blanketing the second electroconductive layer, and a third electroconductive layer blanketing the insulating layer; forming an opening, which extends from a surface of the third electroconductive layer to the protective layer, by dry etching; and wet-etching the protective layer through the opening to expose a portion of the layer containing at least one of the materials composing the electron-emitting element.

Abstract translation: 提供制造电子发射器件的方法，该方法具有易于制造的工艺，并且优选地控制电子束直径。 制造电子发射器件的方法包括：在衬底上布置包括覆盖衬底的第一导电层的构件，包含构成覆盖第一导电层的电子发射元件的材料中的至少一种的层，保护层覆盖 所述层包含构成电子发射元件的材料中的至少一种，覆盖保护层的第二导电层，覆盖第二导电层的绝缘层和覆盖绝缘层的第三导电层; 形成通过干蚀刻从第三导电层的表面延伸到保护层的开口; 并且通过所述开口湿蚀刻所述保护层，以暴露包含构成所述电子发射元件的材料中的至少一种的所述层的一部分。

公开(公告)号：US20040198132A1

公开(公告)日：2004-10-07

申请号：US10831731

申请日：2004-04-23

Inventor： Richard Allan Tuck

IPC: H01J009/04

CPC classification number: H01J63/06 ,  H01J9/025 ,  H01J31/126 ,  H01J31/127

Abstract: A masking layer is provided on selected areas of an electrode structure that is at least partly performed, to define masked areas and unmasked areas (emitter cells). A first constituent with particles and a second constituent are then applied to the emitter cells, and the particles are selectively directed towards the bottoms of the emitter cellsnulle.g. by electrophoresis. The masking layer is then removed from the masked areas, together with any stray quantities of the first and second constituents on the masking layer. The first and second constituents are then processed (e.g. by curing) to create broad area field electron emission sites in desired locations of the electrode structure.

Abstract translation: 在至少部分执行的电极结构的选定区域上设置掩模层，以限定掩蔽区域和未掩蔽区域（发射极电池）。 然后将具有颗粒和第二组分的第一组分施加到发射极细胞，并且颗粒选择性地指向发射体单元的底部 - 例如， 通过电泳。 然后将掩蔽层与掩蔽层上的任何杂散量的第一和第二组分一起从掩蔽区域​​移除。 然后第一和第二组分被处理（例如通过固化）以在电极结构的所需位置产生广泛的场电子发射位点。

公开(公告)号：US20030032362A1

公开(公告)日：2003-02-13

申请号：US10269172

申请日：2002-10-11

Inventor： Randolph D. Schueller ,  Kent R. Kalar ,  Anthony A. Kloba

IPC: H01J009/04

CPC classification number: H01J3/021 ,  H01J29/481 ,  H01J29/485 ,  H01J2201/304

Abstract: Apparatus and method are provided for a package structure that enables mounting of a field-emitting cathode into an electron gun. A non-conducting substrate has the cathode attached and the cathode is electrically connected to a pin through the substrate. Other pins are electrically connected to electrodes integral with the cathode. Three cathodes may be mounted on a die flag region to form an electron gun suitable for color CRTs. Accurate alignment of an emitter array to the apertures in the electron gun and other electrodes such as a focusing lens is achieved. The single package design may be used for many gun sizes. Assembly and attachment of the emitter array to the electron gun during construction of the gun can lower cost of construction.

公开(公告)号：US20020193039A1

公开(公告)日：2002-12-19

申请号：US10196032

申请日：2002-07-15

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Hideo Kurokawa ,  Tetsuya Shiratori ,  Toshifumi Sato ,  Masahiro Deguchi ,  Makoto Kitabatake

IPC: H01J009/04

CPC classification number: H01J1/316 ,  H01J2329/00

Abstract: The first basic structure of the electron emission element of the present invention includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes. According to these structures, an electron emission element with high stability can be obtained, in which emissions can be emitted efficiently and uniformly even in the absence of a bias voltage (electric field) from outside in an output (emission) direction of the electrons, by utilizing a transverse electric field generated between the electrodes disposed in a horizontal direction at a predetermined interval or an in-plane electric current flowing through the conductive layer disposed between the electrodes.

Abstract translation: 本发明的电子发射元件的第一基本结构包括以预定间隔沿水​​平方向布置的至少两个电极和由分散地设置在电极之间的颗粒或聚集体的多个电子发射部分 。 另一方面，本发明的电子发射元件的第二基本结构包括以预定间隔设置的至少两个电极，设置在电极之间以与其电连接的导电层和多个电子发射 分散地设置在电极之间的导电层的表面上的由颗粒或聚集体构成的部分。 根据这些结构，可以获得具有高稳定性的电子发射元件，其中即使在电子的输出（发射）方向上没有来自外部的偏置电压（电场）的情况下也可以有效且均匀地发射， 通过利用在预定间隔沿水​​平方向布置的电极之间产生的横向电场或流过设置在电极之间的导电层的面内电流。

公开(公告)号：US20020168914A1

公开(公告)日：2002-11-14

申请号：US10114917

申请日：2002-04-01

Applicant: LG Electronics Inc.

Inventor： Myung-Won Lee

IPC: H01J009/04

CPC classification number: H01J9/241 ,  H01J2217/49264

Abstract: A method of fabricating a lower substrate of a Plasma Display Panel (PDP) includes the steps of preparing a secondary green sheet having larger amount than a first green sheet containing organic material, combining the first and second green sheets on the metal substrate by laminating the sheets, forming an electrode on the second green sheet, forming an electrode passivation layer on the second green sheet and shaping a separating wall by pressurizing the first and second green sheets to be metallic pattern having a groove.

Abstract translation: 制造等离子体显示面板（PDP）的下基板的方法包括以下步骤：制备比包含有机材料的第一生片大的次级生片，通过层压第一生片和第二生片 片，在第二生片上形成电极，在第二生片上形成电极钝化层，并通过将第一和第二生片加压成具有凹槽的金属图案来使分隔壁成形。

公开(公告)号：US20020093278A1

公开(公告)日：2002-07-18

申请号：US10071440

申请日：2002-02-08

Applicant: Micron Technology, Inc.

Inventor： David H. Wells ,  Ji Ung Lee ,  Aaron R. Wilson

IPC: H01J001/02 ,  H01J001/00 ,  H01L021/00 ,  H01J009/12 ,  H01J009/14 ,  H01J009/04

CPC classification number: H01J29/467 ,  H01J9/025 ,  H01J2329/00

Abstract: A method of forming an extraction grid for field emitter tip structures is described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (nulltopographic selectivitynull) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid. Accordingly, such formation of the extraction grid is self-aligned to its associated emitter tip structures.

Abstract translation: 描述了一种形成场发射器尖端结构的提取栅格的方法。 导电层沉积在形成在场致发射极尖端结构之上的绝缘层上。 使用离子铣削铣削导电层。 由于沿着导电层的暴露表面的形貌差异，离子以不同的入射角度撞击暴露的表面。 由于来自离子研磨的蚀刻速率至少部分地取决于入射角，基于暴露表面的变化的形貌的选择性（“地形选择性”）导致其材料的非均匀去除。 特别地，与发射极尖端结构之间的导电层的部分相比，导电层在场发射极尖端结构附近的部分被去除得更快。 因此，靠近场发射极尖端结构的绝缘层的部分可以暴露，同时留下用于形成提取栅格的导电层的中间部分。 因此，提取栅格的这种形成与其相关联的发射极尖端结构自对准。

公开(公告)号：US20010030498A1

公开(公告)日：2001-10-18

申请号：US09836726

申请日：2001-04-17

Inventor： Takashi Tsutatani ,  Yoshiki Kitahara ,  Toshiyuki Shimizu

IPC: H01J009/04

CPC classification number: H01J61/073 ,  H01J61/822 ,  H01J61/86

Abstract: A high pressure discharge lamp which achieves a long life of at least 3000 hours and in which variations in lamp characteristics are suppressed is disclosed. In the high pressure discharge lamp of the present invention, during manufacturing of an electrode, a covering member 123 having a coil shape and being made of refractory metal is applied on a discharge side end of an electrode rod 122 made of refractory metal so as to cover a circumference of the electrode rod 122 in a vicinity of the discharge side end. The discharge side end 124 on which the covering member 123 is applied is fused into a semi-sphere by intermittently heat fusing the discharge side end according, for instance, to arc discharge or laser irradiation.

Abstract translation: 公开了一种能够实现长寿命至少3000小时，抑制灯特性变化的高压放电灯。 在本发明的高压放电灯中，在制造电极的过程中，将由难熔金属制成的具有线圈形状的覆盖部件123施加在由难熔金属制成的电极棒122的放电侧端部，以便 覆盖放电侧端附近的电极棒122的周边。 通过例如电弧放电或激光照射，将放电侧端部124施加到其上的放电侧端部124通过间歇地热熔化放电侧端部而熔合成半球状。

公开(公告)号：US20010020813A1

公开(公告)日：2001-09-13

申请号：US09145595

申请日：1998-09-02

Inventor： JI UNG LEE

IPC: H01J001/62 ,  H01J063/04 ,  H01J009/04

CPC classification number: H01J9/025

Abstract: An improved structure and method are provided to decouple the gate dielectric thickness and the emitter tip to gate layer distance by etching the dielectric using ion bombardment. The ion bombardment, or ion etch, is performed prior to depositing the gate layer. The improved structure and method will allow a smaller distance between the emitter tip and the gate structure without having to decrease the thickness of the gate insulator layer. The smaller emitter tip to gate distance lowers the turn-on voltage which is highly desirable in such areas as beam optics and power dissipation.

Abstract translation: 提供改进的结构和方法，通过使用离子轰击蚀刻电介质来将栅极电介质厚度和发射极尖端去除栅极层距离。 离子轰击或离子蚀刻在沉积栅极层之前进行。 改进的结构和方法将允许发射极尖端和栅极结构之间的距离更小，而不必减小栅极绝缘体层的厚度。 较小的发射极尖端到栅极距离降低了导通电压，这在诸如光束光学和功率耗散的区域中是非常需要的。