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31.发明授权公开(公告)号：US11626791B2
公开(公告)日：2023-04-11
申请号：US17409295
申请日：2021-08-23
发明人： Mikhail Slepchenkov
IPC分类号： H02M1/12 , H02M3/156 , H03K17/567 , H02M1/00
摘要： Systems and methods that facilitate multilevel hysteresis voltage control methods for cascaded multilevel voltage modulators having a plurality of power cells connected in series and has any positive integer number of output voltage levels to control any unipolar voltage on the load of the voltage modulator, and transfer electrical power from an electrical grid via AC/DC converters or directly from energy storage elements of the power cells to that load. A method of operational rotation of the power cells of a multilevel voltage modulator, which ensures an equal power sharing among the power cells and voltage balancing of the energy storage elements of the power cells of the modulator.
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公开(公告)号：US11581890B2
公开(公告)日：2023-02-14
申请号：US17456579
申请日：2021-11-25
发明人： Harunobu Ikeda
IPC分类号： H03K3/012 , H03K17/00 , H03K17/567 , H03K17/693 , H03K17/687
摘要： Provided is a switching apparatus, including: a first semiconductor switching device of IGBT, and a second semiconductor switching device of a different type from IGBT, which are electrically connected in parallel; and a control unit configured to turn on the second semiconductor switching device before the first semiconductor switching device, wherein a maximum rated current of the second semiconductor switching device is greater than a maximum rated current of the first semiconductor switching device.
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公开(公告)号：US11522537B2
公开(公告)日：2022-12-06
申请号：US17209450
申请日：2021-03-23
发明人： Daniele Miatton , Sergio Morini
IPC分类号： H03K17/567 , H03L7/08
摘要： A gate driver communication system includes a cored transformer including a primary coil and a secondary coil configured to receive power signals and uplink data signals from the primary coil; a primary side power signal generator coupled to the primary coil and configured to generate the power signals having a first frequency; a primary side data transmitter coupled to the primary coil and configured to generate the uplink data signals having a second frequency different from the first frequency; and a primary side controller configured to allocate the power signals and the uplink data signals to the primary coil according to a plurality of time slots, wherein the power signals are allocated to first time slots of the plurality of time slots and the uplink data signals are allocated to second times slots of the plurality of time slots.
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公开(公告)号：US20220376605A1
公开(公告)日：2022-11-24
申请号：US17769978
申请日：2020-10-16
申请人： MTAL GMBH
IPC分类号： H02M1/088 , H03K17/567
摘要： A hybrid switch for a power converter and a method of operating said hybrid switch, the hybrid switch comprising: at a minimum a first and a second element comprising one or more switching devices of a first semiconductor type, and at a minimum a third element comprising one or more switching devices of a second semiconductor type, wherein the second semiconductor type is different from the first semiconductor type, and wherein each element is independently configurable and connected to a separate respective control terminal; and, a controller connected to the control terminals, wherein the controller is configured to control each element independently through each respective control terminal, and wherein the controller is further configured to activate elements based on a measured or estimated current and/or power as required by an operating condition of the converter.
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公开(公告)号：US20220368316A1
公开(公告)日：2022-11-17
申请号：US17726346
申请日：2022-04-21
发明人： Hiroshi NAKAMURA , Hiroyuki NAKAJIMA , Takanori KOHAMA , Yuya ABE
IPC分类号： H03K3/01 , H01F38/12 , H03K17/567
摘要： An integrated circuit for controlling an ignition system including a coil. The integrated circuit includes a transistor configured to control a current flowing through the coil, a first line coupled to a control electrode of the transistor, a second line coupled to an electrode of the transistor on the ground side thereof, a control circuit configured to control on and off of the transistor based on a voltage level of the first line, and a Zener diode having a cathode coupled to the first line and an anode coupled to the second line. The Zener diode has such a capacitance that, when a first signal, and a second signal of a higher frequency, are inputted to the first line, the control circuit controls the on and off of the transistor in response to the first signal irrespective of the second signal.
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公开(公告)号：US20220345128A1
公开(公告)日：2022-10-27
申请号：US17640980
申请日：2020-12-07
发明人： Yuta NAGATOMI , Shingo ENOMOTO , Songbaek CHOE , Osamu TABATA , Noboru NEGORO
IPC分类号： H03K17/567 , H03K17/06 , H03K17/16 , H02M1/00
摘要： A gate drive circuit that drives a power device by controlling charge and discharge of gate capacitance of the power device includes: a first semiconductor switch that charges the gate capacitance by being brought into conduction according to a first control signal; a second semiconductor switch that discharges the gate capacitance by being brought into conduction according to a second control signal; and a slew rate control circuit that is connected between a gate of the power device and a ground line, and controls a slew rate during discharge. The slew rate control circuit includes a capacitor and a third semiconductor switch connected in series. The third semiconductor switch is brought into conduction according to the second control signal.
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公开(公告)号：US20220345124A1
公开(公告)日：2022-10-27
申请号：US17747114
申请日：2022-05-18
发明人： Daniel Zmood , Tzachi Glovinsky
IPC分类号： H03K17/06 , H03K17/567 , H03K17/10 , H03K17/16
摘要： A switching device includes a first leg having a plurality of transistors connected in series. The switching device also includes a second leg having a transistor, where the second leg is connected in parallel to plurality of transistors of the first leg. The switching device further includes a third leg having a diode, and the third leg has lower reverse recovery losses relative to the first leg and/or the second leg.
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公开(公告)号：US11483001B2
公开(公告)日：2022-10-25
申请号：US17365690
申请日：2021-07-01
发明人： Katsuyuki Ikeuchi , Hideaki Majima
IPC分类号： H03K17/10 , H03K17/567 , H03K17/687 , H03K19/0185 , H03K17/689 , H03K17/30 , H03K19/17784
摘要： According to one aspect of embodiments, a drive circuit of a normally-ON transistor includes: a normally-OFF transistor that includes a main current path connected in serial to a main current path of the normally-ON transistor; and a buffer circuit that supplies, to a gate of the normally-ON transistor, a control signal for controlling turning ON and OFF of the normally-ON transistor, whose high-voltage side and low-voltage side are biased by a bias voltage supplied from a power source unit.
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39.发明授权公开(公告)号：US11451224B2
公开(公告)日：2022-09-20
申请号：US17280907
申请日：2020-08-10
发明人： Hongxia Tao
IPC分类号： H03K17/567 , G06F17/00 , H03K17/51
摘要： The present invention provides a single-pole double-throw switch circuit with a Type-C interface, an analog switch chip and an electronic device, which can generate a reverse bias voltage across a first diode, so that a capacitance value of a PN junction can be significantly reduced after the reverse bias voltage is applied to the PN junction. Further, a ground capacitance corresponding to a COM point when the first diode is turned off can be effectively reduced, avoiding the reduction of a bandwidth of a digital path due to excessive capacitance. It can be seen that the present invention can realize a large size of a first field effect transistor and a high bandwidth of the digital path simultaneously, thereby facilitating the simultaneous improvement of the THD performance of an analog audio path and the bandwidth of the digital path, and avoiding conflicts between the two.
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公开(公告)号：US20220262935A1
公开(公告)日：2022-08-18
申请号：US17668793
申请日：2022-02-10
发明人： Hans-Juergen Thees , Alim Karmous , Anton Mauder
IPC分类号： H01L29/739 , H03K17/567 , H02M1/08
摘要： A voltage-controlled switching device includes a drain/drift region of a first conductivity type formed in a semiconductor portion. A channel region and the drain/drift region are in direct contact with each other. A source region of a second conductivity type and the channel region are in direct contact with each other. A gate electrode and the channel region are capacitively coupled and configured such that, in a an on-state of the voltage-controlled switching device, a first enhancement region of charge carriers corresponding to the first conductivity type forms in the channel region and band-to-band tunneling is facilitated between the source region and the first enhancement region.
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