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31.发明申请公开(公告)号：US20200304738A1
公开(公告)日：2020-09-24
申请号：US16807246
申请日：2020-03-03
发明人： Masao TAKAHASHI
IPC分类号： H04N5/359 , H01L27/148 , H04N9/04 , H04N5/372
摘要： A solid-state image pickup device according to an embodiment is a solid-state image pickup device including a first pixel row, a second pixel row, and a third pixel row that are arranged in a horizontal direction. In the solid-state image pickup device, a first control pulse for transferring charges of first accumulation portions of the fourth and sixth CCD registers in a vertical direction perpendicular to the horizontal direction and a second control pulse for transferring charges of second accumulation portions of the fourth and sixth CCD registers in the horizontal direction are input to the fourth and sixth CCD registers such that an Hi period of the first control pulse and an Hi period of the second control pulse do not overlap each other in a timing period in which charges accumulated in the first, second, and third pixel rows are transferred.
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公开(公告)号：US10778917B2
公开(公告)日：2020-09-15
申请号：US15980456
申请日：2018-05-15
发明人： Min Hyuk Kim , Inchang Choi
摘要： An HDR imaging apparatus include: a deinterlacing circuit configured to generate a high-exposure Bayer frame and low-exposure Bayer frame by deinterlacing an interlace Bayer raw frame in which a high-exposure region and low-exposure region are interlaced; a demosaicing circuit configured to convert the high-exposure Bayer frame and the low-exposure Bayer frame into a high-exposure RGB frame and low-exposure RGB frame, respectively; a reconstructing circuit configured to remove interlace artifacts and noise from the high-exposure RGB frame and the low-exposure RGB frame, using joint dictionaries generated through joint dictionary learning on training data sets each containing a plurality of bases, but the corresponding bases have different values; and an HDR generation circuit configured to generate an HDR image frame by combining the high-exposure RGB frame and the low-exposure RGB frame from which interlace artifacts and noise were removed by the reconstructing circuit.
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公开(公告)号：US20200280690A1
公开(公告)日：2020-09-03
申请号：US16877285
申请日：2020-05-18
发明人： Hisashi Takado , Noriyuki Kaifu , Yasushi Iwakura , Masaaki Minowa , Takeshi Akiyama , Toshiki Tsuboi
IPC分类号： H04N5/359 , H04N5/353 , H04N5/355 , H04N5/3745
摘要： A charge generated in a single photoelectric conversion unit during a certain period is stored in a first charge storing unit, and a charge generated in the single photoelectric conversion unit during a different period is stored in a second charge storing unit, and then a third transferring unit is set to on-state to transfer the charge to a floating diffusion, and then, in a state where the charge transferred to the floating diffusion is stored, a fourth transferring unit is set to on-state.
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公开(公告)号：US10764523B2
公开(公告)日：2020-09-01
申请号：US16086312
申请日：2017-03-17
申请人： SONY CORPORATION
发明人： Taiichiro Watanabe , Fumihiko Koga
IPC分类号： H04N5/369 , H04N5/374 , H01L27/146 , H04N5/359
摘要： The present disclosure relates to a solid-state imaging device and an electronic apparatus that can reduce the influence on an OPB pixel in a case where blooming has occurred in an aperture pixel. A solid-state imaging device that is one aspect of the present disclosure has a first photoelectric conversion portion, an upper electrode, and a lower electrode formed outside a substrate, the first photoelectric conversion portion performing photoelectric conversion in accordance with incident light, the upper electrode and the lower electrode being formed to sandwich the first photoelectric conversion portion. The solid-state imaging device includes: an aperture pixel that is disposed on a pixel array, and generates a normal pixel signal; an OPB pixel that is disposed at an end portion on the pixel array, and generates a pixel signal indicating a dark current component; and a charge releasing portion that is disposed between the aperture pixel and the OPB pixel, and releases electric charge flowing out from the aperture pixel. The present disclosure can be applied to back-illuminated vertical spectroscopic CMOS image sensors.
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公开(公告)号：US10748954B2
公开(公告)日：2020-08-18
申请号：US16798179
申请日：2020-02-21
发明人： Masahiro Kobayashi , Yusuke Onuki , Toru Koizumi
IPC分类号： H01L21/00 , H01L27/146 , H04N5/3745 , H04N5/359
摘要： A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.
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36.发明授权公开(公告)号：US10736589B2
公开(公告)日：2020-08-11
申请号：US15974722
申请日：2018-05-09
申请人： FUJIFILM CORPORATION
发明人： Yasufumi Oda
摘要： A control unit corrects a lag component, which is included in offset image data in a state in which radiation is not emitted for a period from the end of a first imaging operation of generating second radiographic image data in a state in which the radiation is emitted and to the start of a second imaging operation of generating the second radiographic image data in the state in which the radiation is emitted and at each of a plurality of different times elapsed since the first imaging operation, on the basis of a combination of the correction image data and the time elapsed since the first imaging operation, lag component time change information, and a time from the end of the first imaging operation to the start of the second imaging operation, and corrects the second radiographic image data using the corrected offset image data.
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公开(公告)号：US10734434B2
公开(公告)日：2020-08-04
申请号：US15984136
申请日：2018-05-18
发明人： Yuanwei Zheng , Gang Chen , Duli Mao , Dyson Tai , Lindsay Grant
IPC分类号： H01L27/146 , H04N5/359 , H04N5/378
摘要： An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.
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公开(公告)号：US20200236308A1
公开(公告)日：2020-07-23
申请号：US16842436
申请日：2020-04-07
发明人： ISAO HIROTA
IPC分类号： H04N5/355 , H04N5/3745 , H01L27/146 , H04N5/359 , H04N5/378
摘要： The present disclosure relates to an imaging device, a driving method, and an electronic apparatus that can capture an image with a higher dynamic range. The imaging device includes a pixel region in which pixels are arranged, the pixels each including a photoelectric conversion unit that converts incident light into electric charges through electric conversion and stores the electric charges, and two or more charge storage units that store the electric charges transferred from the photoelectric conversion unit; and a drive unit that drives the pixels. The drive unit drives each pixel to cause the photoelectric conversion unit to repeatedly transfer electric charges with different exposure times to the two or more charge storage units during the light reception period of one frame. The present technology can be applied to an imaging device capable of capturing an HDR image, for example.
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公开(公告)号：US10687006B2
公开(公告)日：2020-06-16
申请号：US15483259
申请日：2017-04-10
发明人： Jeroen Rotte , Peter Centen
摘要： An image sensor is provided. In one aspect, the image sensor includes a pixel coupled to an output line. The pixel includes a photodiode configured to generate electrical charges in response to light and a supply circuit configured to supply a voltage to the photodiode to keep a voltage of the photodiode at or above a threshold level in an integration time. In another aspect, the pixel includes a supply circuit configured to selectively supply voltage to the photodiode in a first charge holding capacity and a second charge holding capacity.
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公开(公告)号：US10685991B2
公开(公告)日：2020-06-16
申请号：US16055927
申请日：2018-08-06
发明人： Kazuki Fujita , Ryuji Kyushima , Harumichi Mori
IPC分类号： H04N5/359 , H01L27/146 , H04N5/32
摘要： A solid-state imaging device comprises a photodetecting section, an unnecessary carrier capture section, and a vertical shift register. The unnecessary carrier capture section has carrier capture regions arranged in a region between the photodetecting section and the vertical shift register for respective rows. Each of the carrier capture regions includes a transistor and a photodiode. The transistor has one terminal connected to the photodiode and the other terminal connected to a charge elimination line. The charge elimination line is short-circuited to a reference potential line.
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