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公开(公告)号：US09848151B2
公开(公告)日：2017-12-19
申请号：US14895261
申请日：2014-05-28
发明人： Kazuki Fujita , Ryuji Kyushima , Junichi Sawada , Harumichi Mori
IPC分类号： H04N5/335 , H04N5/376 , H01L27/146 , H04N5/367 , H04N5/374 , H04N5/3745
CPC分类号： H04N5/376 , H01L27/14603 , H01L27/14643 , H01L27/14663 , H04N5/367 , H04N5/3742 , H04N5/37457
摘要： A solid-state imaging device includes a photodetecting section, a vertical shift register section, first row selection lines, and second row selection lines. The vertical shift register section provides the row selection lines of the m-th row with common row selection signals.
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公开(公告)号：US20140252241A1
公开(公告)日：2014-09-11
申请号：US14285095
申请日：2014-05-22
发明人： Harumichi MORI , Kazuki Fujita , Ryuji Kyushima
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , G01T1/00 , G01T1/20 , H01L27/14603 , H01L27/14663 , H04N5/32 , H04N5/359 , H04N5/3742
摘要： A solid state imaging device 1 includes a photodetecting section 10, a signal readout section 20, a controlling section 30, dummy photodetecting sections 11 and 12 including dummy photodiodes, discharging means for discharging junction capacitance portions of the dummy photodiodes, and a scintillator layer 50 provided so as to cover the photodetecting section 10. The dummy photodetecting section 11 is disposed so as to neighbor the first row (the upper side of the photodetecting section 10) of the photodetecting section 10 and has a length equivalent to the length of the photodetecting section 10 in the left-right direction. The dummy photodetecting section 12 is disposed so as to neighbor the M-th column of the photodetecting section 10 (the lower side of the photodetecting section 10) and has a length equivalent to the length of the photodetecting section 10 in the left-right direction.
摘要翻译： 固态成像装置1包括光电检测部10，信号读出部20，控制部30，包含虚设光电二极管的虚设受光部11,12，对虚拟光电二极管的结电容部进行放电的放电单元以及闪烁体层50 被设置为覆盖受光部10.虚设受光部11配置成与受光部10的第一列（受光部10的上侧）相邻，并且具有与光检测部的长度相当的长度 第10节在左右方向。 伪光检测部12配置成与受光部10的第M列（受光部10的下侧）相邻，长度等于受光部10的左右方向的长度 。
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公开(公告)号：US11996434B2
公开(公告)日：2024-05-28
申请号：US17283102
申请日：2019-10-09
发明人： Ryuji Kyushima , Kazuki Fujita , Junichi Sawada , Takao Aritake , Minoru Ichikawa , Haruyoshi Okada , Seiji Fukamizu , Shuhei Namba
IPC分类号： H01L27/146 , A61B6/00 , A61B6/42 , H04N25/70
CPC分类号： H01L27/14658 , A61B6/42 , A61B6/44 , H01L27/14603 , H04N25/70
摘要： A radiation imaging device according to one embodiment includes a radiation detection panel having a first surface on which a detection region is formed and an electrode pad is formed outside the detection region, and a second surface on a side opposite to the first surface, a base substrate having a support surface configured to face the second surface of the radiation detection panel and configured to support the radiation detection panel, and a flexible circuit substrate connected to the electrode pad via a connecting member, wherein an end portion of the base substrate is located further inward than an inner end portion of the connection region in which the electrode pad, the connecting member, and the flexible circuit substrate overlap each other when seen in an Z direction orthogonal to the support surface.
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公开(公告)号：US08675813B2
公开(公告)日：2014-03-18
申请号：US13921565
申请日：2013-06-19
发明人： Kazuki Fujita , Harumichi Mori , Ryuji Kyushima , Masahiko Honda
IPC分类号： A61B6/00
CPC分类号： G01T1/247 , G01T1/249 , H01L27/14656 , H01L27/14658 , H04N5/32 , H04N5/3592 , H04N5/374
摘要： The solid-state imaging device comprises a photodetecting section having M×N pixel portions P1,1 to PM,N two-dimensionally arranged in a matrix of M rows and N columns. A pixel portion Pm,n of the photodetecting section includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SW1 connected to the photodiode PD. The photodetecting section includes plural dummy photodiodes PD1 arranged around one pixel portion without not completely surrounding the one pixel portion, and each dummy photodiode PD1 is provided in a region surrounded by any two pixel portions adjacent to one another.
摘要翻译： 固态成像装置包括具有M×N个像素部分P1,1〜PM，N以二维方式排列成M行N列的矩阵的光检测部。 受光部的像素部Pm，n包括：光电二极管PD，其生成与入射光强度相对应的量的电荷;以及连接到光电二极管PD的读出用开关SW1。 光检测部分包括多个虚拟光电二极管PD1，它们不围绕一个像素部分设置在一个像素部分周围，并且每个虚拟光电二极管PD1设置在彼此相邻的任何两个像素部分所包围的区域中。
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5.发明授权公开(公告)号：US10225491B2
公开(公告)日：2019-03-05
申请号：US15325729
申请日：2015-07-09
IPC分类号： H04N5/00 , H04N5/32 , H04N5/347 , H04N5/378 , G01N23/046
摘要： A solid-state imaging device includes a photodetecting unit including MN pixels arrayed two-dimensionally in M rows and N columns, an output unit outputting a digital value generated on the basis of the amount of charge input from the pixels, and a control unit. The control unit divides the MN pixels in the photodetecting unit into unit regions each including pixels in Q rows and R columns, divides the unit regions arrayed two-dimensionally in (M/Q) rows and (N/R) columns into binning regions each including unit regions in K rows and one column, and repeatedly outputs the digital value according to the sum of amounts of the charges output from KQR pixels included in each binning region from the output unit K times in a column order for each row sequentially for the binning regions arrayed two-dimensionally in (M/KQ) rows and (N/R) columns.
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公开(公告)号：US11860323B2
公开(公告)日：2024-01-02
申请号：US17283115
申请日：2019-10-09
发明人： Ryuji Kyushima , Kazuki Fujita , Junichi Sawada , Takao Aritake , Minoru Ichikawa , Haruyoshi Okada , Seiji Fukamizu , Shuhei Namba
CPC分类号： G01T1/2928 , H05K1/189 , H05K2201/10151
摘要： A radiation imaging device according to one embodiment comprises a radiation detection panel, a base substrate having a support surface configured to support the radiation detection panel, and a housing, wherein: the housing has a top wall and a bottom wall, the base substrate has a protruding portion which protrudes further outward than the radiation detection panel when seen in a direction orthogonal to the support surface, a first extending portion is provided to the support surface of the protruding portion, a second extending portion is provided to a back surface of the protruding portion, the second extending portion being disposed at a position which it faces the first extending portion with the protruding portion interposed therebetween, and the base substrate is supported on the top wall via the first extending portion and is supported on the bottom wall via the second extending portion.
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公开(公告)号：US10685991B2
公开(公告)日：2020-06-16
申请号：US16055927
申请日：2018-08-06
发明人： Kazuki Fujita , Ryuji Kyushima , Harumichi Mori
IPC分类号： H04N5/359 , H01L27/146 , H04N5/32
摘要： A solid-state imaging device comprises a photodetecting section, an unnecessary carrier capture section, and a vertical shift register. The unnecessary carrier capture section has carrier capture regions arranged in a region between the photodetecting section and the vertical shift register for respective rows. Each of the carrier capture regions includes a transistor and a photodiode. The transistor has one terminal connected to the photodiode and the other terminal connected to a charge elimination line. The charge elimination line is short-circuited to a reference potential line.
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公开(公告)号：US20140353515A1
公开(公告)日：2014-12-04
申请号：US14362643
申请日：2012-12-04
IPC分类号： H01L31/024 , H04N5/378 , G01T1/00
CPC分类号： H01L31/024 , G01T1/00 , H01L27/14618 , H01L27/14623 , H01L27/14632 , H01L27/14663 , H01L2224/48091 , H01L2224/48137 , H04N5/2257 , H04N5/32 , H04N5/378 , H01L2924/00014
摘要： A sensor unit includes a metallic base member, a solid-state imaging element, and amplifier chips. The base member has a first placement surface and a second placement surface. The solid-state imaging element has a photodetecting surface, and is disposed on the first placement surface such that a rear surface and the first placement surface face each other. The amplifier chips are mounted on a substrate disposed on the second placement surface. The base member further has side wall portions facing side surfaces of the solid-state imaging element. The chips and the solid-state imaging element are electrically connected to one another via a bonding wire. The chips are thermally coupled to the base member via a thermal via of the substrate.
摘要翻译： 传感器单元包括金属基底构件，固态成像元件和放大器芯片。 基座部件具有第一放置面和第二放置面。 固体摄像元件具有受光面，并且配置在第一放置面上，使得背面和第一配置面相对。 放大器芯片安装在设置在第二放置表面上的基板上。 基部构件还具有面向固态成像元件的侧表面的侧壁部分。 芯片和固态成像元件通过接合线彼此电连接。 芯片通过衬底的热通孔热耦合到基底构件。
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公开(公告)号：US11520061B2
公开(公告)日：2022-12-06
申请号：US17284256
申请日：2019-10-09
发明人： Ryuji Kyushima , Kazuki Fujita , Junichi Sawada , Takao Aritake , Minoru Ichikawa , Haruyoshi Okada , Seiji Fukamizu , Shuhei Namba
IPC分类号： G01T1/20 , H01L27/146
摘要： A radiation imaging device according to one embodiment includes a radiation detection panel having a first surface on which a detection region is formed, and a second surface on a side opposite to the first surface, a base substrate having a support surface configured to face the second surface and configured to support the radiation detection panel, and a flexible circuit substrate connected to the radiation detection panel, wherein an end portion of the base substrate corresponding to a portion to which the flexible circuit substrate is connected is located further inward than an end portion of the radiation detection panel when seen in a first direction orthogonal to the support surface, and the base substrate has a protruding portion which protrudes further outward than the radiation detection panel at a position at which the base substrate does not overlap the flexible circuit substrate when seen in the first direction.
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公开(公告)号：US11139293B2
公开(公告)日：2021-10-05
申请号：US16348599
申请日：2017-11-16
发明人： Minoru Ichikawa , Kazuki Fujita
摘要： The present embodiment relates to a photon detector which includes a preamplifier having a structure capable of preventing saturation of an amplifier. The preamplifier includes an amplifier, and further includes a capacitive element, an n-type MOSFET, and a p-type MOSFET disposed on a plurality of wirings electrically connecting the input end side and the output end side of the amplifier. A control electrode of the n-type MOSFET is set to a first fixed potential V1, while a control electrode of the p-type MOSFET is set to a second fixed potential V2.
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