MICROFLUIDIC CHIP FOR SAMPLE PREPARATION AND SAMPLE PREPARATION SYSTEM INCLUDING SAME

    公开(公告)号:US20240424491A1

    公开(公告)日:2024-12-26

    申请号:US18703263

    申请日:2022-10-12

    Abstract: A microfluidic chip (12) for sample preparation and a sample preparation system (10) are provided. The microfluidic chip (10) includes: a chip body (14) and a plurality of injection ports (16, 18, 24, 30, 36, 38, 40) provided in the chip body (14). A plurality of chambers (20, 26, 32) and a plurality of mixers (22, 28, 34) are provided in the chip body (14). A first chamber (20) is configured to receive a sample via a first injection port (16) and a reducing agent via a second injection port (18). A first mixer (22) in fluid communication with the first chamber (20) is operable to mix the sample and the reducing agent from the first chamber (20) to produce a denatured and reduced sample. A second chamber (26) in fluid communication with the first mixer (22) is configured to receive an alkylating agent via a third injection port (24). A second mixer (28) in fluid communication with the second chamber (26) is operable to mix the denatured and reduced sample with the alkylating agent to produce an alkylated sample. A third chamber (32) in fluid communication with the second mixer (28) is configured to receive a protein precipitation solution via a fourth injection port (30). A third mixer (34) in fluid communication with the third chamber (32) is operable to mix the alkylated sample with the protein precipitation solution to produce a precipitated sample. A reaction chamber (42) in fluid communication with the third mixer (34) is provided in the chip body (14), the reaction chamber (42) being configured to receive a washing buffer via a fifth injection port (36), a digestion buffer via a sixth injection port (38) and an elution buffer via a seventh injection port (40). A depth filter (43) is received in the reaction chamber (42). A first discharge port (44) and a second discharge port (46) are provided in the chip body (14) in fluid communication with the reaction chamber (42). The first discharge port (44) is operable to discharge waste from the reaction chamber (42) and the second discharge port (46) is operable to discharge a prepared sample.

    PHASED ARRAY ANTENNA
    447.
    发明公开

    公开(公告)号:US20240305018A1

    公开(公告)日:2024-09-12

    申请号:US18284051

    申请日:2022-03-29

    CPC classification number: H01Q23/00 H01Q3/36 H01Q5/42 H01Q21/065

    Abstract: A phased array antenna that maximizes antenna gain and minimizes or avoids grating/side lobes issues. The phased array antenna includes a receiver antenna array including one or more groups of receiver radiating elements, where each group of receiver radiating elements includes a first receiver subarray of receiver radiating elements and a second receiver subarray of receiver radiating elements. The phased array antenna further includes receiver core chips, including, for each of the one or more groups of receiver radiating elements, a first receiver core chip associated with the first receiver subarray and a second receiver core chip associated with the second receiver subarray. Additionally, the phased array antenna includes receiver feeding networks, including, for each of the one or more groups of receiver radiating elements, a first receiver feeding network including first feed lines and a second receiver feeding network including second feed lines.

    METHOD AND ARRANGEMENT FOR FORMING A TRANSITION METAL DICHALCOGENIDE LAYER

    公开(公告)号:US20240301550A1

    公开(公告)日:2024-09-12

    申请号:US18657569

    申请日:2024-05-07

    CPC classification number: C23C16/305 C23C16/4401 C23C16/4481 C23C16/455

    Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.

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