公开(公告)号：US20250029834A1

公开(公告)日：2025-01-23

申请号：US18908990

申请日：2024-10-08

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Shankar Swaminathan ,  Kiran Shrestha ,  Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; and depositing a molybdenum metal film directly on the dielectric surface, wherein depositing comprises: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed directly on a surface of a dielectric material deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20250029831A1

公开(公告)日：2025-01-23

申请号：US18772365

申请日：2024-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32

Abstract: The present disclosure relates to methods and systems for forming a radical treated film on a surface of a substrate. More particularly, the disclosed methods and systems utilize radical treatment to treat a film which has been deposited on the surface of a substrate. The radical treatment takes place in a radical treatment chamber and the deposition takes place in a deposition chamber, wherein the chambers are operationally coupled to allow a substrate to be transferred between them without any air break.

公开(公告)号：US12203166B2

公开(公告)日：2025-01-21

申请号：US17307007

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Bhushan Zope ,  Shankar Swaminathan ,  Theodorus G. M. Oosterlaken

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

Abstract: An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

公开(公告)号：US20250014908A1

公开(公告)日：2025-01-09

申请号：US18348602

申请日：2023-07-07

Applicant: ASM IP Holding, B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Shaoren Deng

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/027 ,  H01L21/768

Abstract: Disclosed are methods and related systems for topography-selective depositions. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a material on a distal surface of a gap, and not on at least one of sidewalls of the gap and proximal surfaces. Further described are methods for filling a gap with a high quality material by means of a sacrificial gap filling fluid.

公开(公告)号：US20240429038A1

公开(公告)日：2024-12-26

申请号：US18827621

申请日：2024-09-06

Applicant: ASM IP Holding B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/311 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20240426381A1

公开(公告)日：2024-12-26

申请号：US18745241

申请日：2024-06-17

Applicant: ASM IP Holding B.V.

Inventor： Mandar Deshpande ,  Senthil Arasu Subas Chandra Bose ,  Samer Banna

IPC: F16K3/02

Abstract: Thermal breaks and/or gaps between portions of interfacing surfaces of two chambers reduce heat transfer between the chambers. An interface surface (e.g., of a gate valve) includes (i) a base surface; (ii) a raised ring surface extending outward beyond the base surface, wherein the raised ring surface extends around a gate valve access opening; (iii) a seal support surface extending around the raised ring surface; and (iv) at least one raised boss surface extending outward beyond the base surface. The interface surface defines an outer perimeter having a total interface area. The raised ring surface and raised boss surface(s) define at least a portion of a total contacting surface area of the interface surface that is spaced outward from the base surface. The total contacting surface area of the interface surface is less than 10% of the total interface area and/or less than 10% of the base surface's surface area.

公开(公告)号：US20240425984A1

公开(公告)日：2024-12-26

申请号：US18748983

申请日：2024-06-20

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Quentin Nikitas Nicolas Lionel Eric Tricas ,  Werner Knaepen ,  Alessandro Viva

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52

Abstract: A method of forming a layer of a material on one or more substrates by ALD is disclosed. Embodiments of the presently described method comprise performing a plurality of deposition cycles comprising at least two precursors pulses with intervening purge pulses to form the layer of the material on the one or more substrates. During each deposition cycle, a ratio of the process chamber pressure during each precursor pulse of the at least two precursor pulses to the process chamber pressure during an intervening purge pulse is equal or different from one another.

公开(公告)号：US12173404B2

公开(公告)日：2024-12-24

申请号：US17184290

申请日：2021-02-24

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Caleb Miskin

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/42 ,  C23C16/44 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02

Abstract: A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.

公开(公告)号：US20240419068A1

公开(公告)日：2024-12-19

申请号：US18740139

申请日：2024-06-11

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest ,  Joäo Antunes Afonso ,  Steaphan Mark Wallace ,  Yoann Tomczak ,  Renè Henricus Jozef Vervuurt

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/16

Abstract: Structures and related systems and methods for dose reduction in extreme ultraviolet (EUV) lithography. The structures can comprise a dose reducing layer, an adhesion layer, and a resist.

公开(公告)号：US12169361B2

公开(公告)日：2024-12-17

申请号：US16931275

申请日：2020-07-16

Applicant: ASM IP Holding B.V.

Inventor： Ivo Raaijmakers ,  Daniele Piumi ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugene Givens

IPC: H01L21/311 ,  G03F7/16

Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.