公开(公告)号：US20090037946A1

公开(公告)日：2009-02-05

申请号：US11888362

申请日：2007-07-31

Applicant: Nelson Liang An Chang ,  Niranjan Damera-Venkata ,  Yuxin Liu ,  David Wu ,  Don Ouchida ,  Lynn Katon

Inventor： Nelson Liang An Chang ,  Niranjan Damera-Venkata ,  Yuxin Liu ,  David Wu ,  Don Ouchida ,  Lynn Katon

IPC: H04N7/173

CPC classification number: G06Q30/00 ,  H04N21/475 ,  H04N21/4756 ,  H04N21/812

Abstract: A method of dynamically displaying content to an audience is disclosed. The method includes displaying content to the audience wherein at least a portion of the audience is proximate a display means, capturing a plurality of responses from the audience, aggregating the plurality of responses and dynamically updating the displayed content based on the aggregated plurality of responses.

Abstract translation: 公开了向观众动态显示内容的方法。 该方法包括向观众显示内容，其中观众的至少一部分接近显示装置，从观众捕获多个响应，聚合多个响应并基于聚合的多个响应来动态地更新显示的内容。

公开(公告)号：US20080296682A1

公开(公告)日：2008-12-04

申请号：US11755930

申请日：2007-05-31

Applicant: Jianhong ZHU ,  Jinrong ZHOU ,  David WU ,  James F. BULLER

Inventor： Jianhong ZHU ,  Jinrong ZHOU ,  David WU ,  James F. BULLER

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L21/84 ,  H01L21/76895 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823475 ,  H01L27/1203 ,  H01L29/7843

Abstract: MOS structures with remote contacts and methods for fabricating such MOS structures are provided. In one embodiment, a method for fabricating an MOS structure comprises providing a semiconductor layer that is at least partially surrounded by an isolation region and that has an impurity-doped first portion. First and second MOS transistors are formed on and within the first portion. The transistors are substantially parallel and define a space therebetween. An insulating material is deposited overlying the first portion of the semiconductor layer and at least a portion of the isolation region. A contact is formed through the insulating material outside the space such that the contact is in electrical communication with the transistors.

Abstract translation: 提供了具有远程触点的MOS结构和用于制造这种MOS结构的方法。 在一个实施例中，一种用于制造MOS结构的方法包括提供半导体层，该半导体层至少部分地被隔离区包围，并且具有杂质掺杂的第一部分。 第一和第二MOS晶体管形成在第一部分内部和第一部分内。 晶体管基本上平行并且在它们之间限定了一个空间。 沉积覆盖半导体层的第一部分和隔离区域的至少一部分的绝缘材料。 通过空间外部的绝缘材料形成触点，使得触点与晶体管电连通。

公开(公告)号：US20080114478A1

公开(公告)日：2008-05-15

申请号：US11558191

申请日：2006-11-09

Applicant: David Wu ,  Cam Minh Luu ,  Keith Klingler ,  Glen Albert Grover

Inventor： David Wu ,  Cam Minh Luu ,  Keith Klingler ,  Glen Albert Grover

IPC: G06F17/00

CPC classification number: G11B20/10527 ,  G10L19/008 ,  G11B2020/10546 ,  G11B2220/2541 ,  H04N9/8063

Abstract: Certain aspects of a method and system for multi-channel PCM audio grouping in hardware are disclosed. Aspects of one method may include arbitrating the processing of a plurality of channel pairs within a channel group based on a plurality of received PCM audio samples. The plurality of channel pairs within the channel group may be sequentially processed based on their channel IDs. The channel ID of the first channel pair within the channel group may be allocated as a common group identification value. The grouping of multiple channel pairs ensures channel synchronization.

Abstract translation: 公开了用于硬件中多声道PCM音频分组的方法和系统的某些方面。 一种方法的方面可以包括基于多个接收的PCM音频样本来仲裁信道组内的多个信道对的处理。 信道组内的多个信道对可以根据它们的信道ID被顺序处理。 信道组内的第一信道对的信道ID可以被分配为公共组标识值。 多通道对的分组确保通道同步。

公开(公告)号：US20070273563A1

公开(公告)日：2007-11-29

申请号：US11835189

申请日：2007-08-07

Applicant: David Wu ,  Sheng Zhong

Inventor： David Wu ,  Sheng Zhong

IPC: H03M7/30

CPC classification number: H04N5/607 ,  H04H20/48 ,  H04N5/602 ,  H04N21/8106

Abstract: A method and apparatus are disclosed for performing sampling rate conversion of an audio signal from a first sampling rate to any of a plurality of higher sampling rates using a single set of low-pass filter coefficients. Sampling rate conversion is accomplished by effectively up-sampling, low-pass filtering, and down-sampling the audio signal to generate interpolated output samples of a second digital audio signal at any of a plurality of sampling rates. The sampling rate conversion process includes storing a fixed set of filter coefficients as a plurality of phased subsets of filter coefficients, applying samples of the audio signal to the phased subsets in a rotational manner to generate filtered samples of the audio signal, and selecting and linear interpolating between certain filtered samples to generate samples of the second digital audio signal.

Abstract translation: 公开了一种用于使用单组低通滤波器系数将音频信号从第一采样率采样率转换到多个较高采样率中的任何一个的方法和装置。 采样率转换通过有效地进行上采样，低通滤波和下采样音频信号来实现，以便以多个采样率中的任何一个产生第二数字音频信号的内插输出采样。 采样率转换过程包括将固定的滤波器系数集合存储为滤波器系数的多个相位子集，以旋转方式将音频信号的采样应用于相位子集，以产生滤波后的音频信号样本，以及选择和线性 在某些经滤波的样本之间内插以产生第二数字音频信号的采样。

公开(公告)号：US20070259513A1

公开(公告)日：2007-11-08

申请号：US11381219

申请日：2006-05-02

Applicant: David Wu ,  Mark Michael

Inventor： David Wu ,  Mark Michael

IPC: H01L21/44

CPC classification number: H01L21/76819 ,  H01L21/76802 ,  H01L21/76834 ,  H01L29/7843

Abstract: The present invention is directed to methods of forming contact openings. In one illustrative embodiment, the method includes forming a feature above a semiconducting substrate, forming a layer stack comprised of a plurality of layers of material above the feature, the layer stack having an original height, reducing the original height of the layer stack to thereby define a reduced height layer stack above the feature, forming an opening in the reduced height layer stack for a conductive member that will be electrically coupled to the feature and forming the conductive member in the opening in the reduced height layer stack.

Abstract translation: 本发明涉及形成接触开口的方法。 在一个说明性实施例中，该方法包括在半导体衬底上形成特征，形成由特征上方的多层材料构成的层叠层，层堆叠具有原始高度，从而降低层堆叠的原始高度 在所述特征之上限定减小的高度层堆叠，在所述减小的高度层堆叠中形成用于导电构件的开口，所述导电构件将电耦合到所述特征并且在所述还原高度层堆叠中的所述开口中形成所述导电构件。

公开(公告)号：US07272199B2

公开(公告)日：2007-09-18

申请号：US10057133

申请日：2002-01-24

Applicant: Andrew Storm ,  David Wu

Inventor： Andrew Storm ,  David Wu

IPC: H04B1/10 ,  H03H7/30

CPC classification number: H04L25/03012 ,  H04L25/03019 ,  H04L25/03159 ,  H04L2025/03414 ,  H04L2025/03445 ,  H04L2025/03522

Abstract: An update mechanism and approach are provided for configuring a communications receiver. According to the approach, a time domain equalizer and a frequency domain equalizer in a communications receiver are dynamically updated based upon performance data that indicates the performance of a communications channel from which the communications receiver receives data. This approach accounts for changes in the communications channel attributable to changes in the transmission medium or changes in interference sources.

Abstract translation: 提供了一种用于配置通信接收机的更新机制和方法。 根据该方法，基于指示通信接收机从其接收数据的通信信道的性能的性能数据，动态地更新通信接收机中的时域均衡器和频域均衡器。 这种方法考虑了由于传输介质的变化或干扰源的变化引起的通信信道的变化。

公开(公告)号：US07253045B1

公开(公告)日：2007-08-07

申请号：US10889026

申请日：2004-07-13

Applicant: Derick J. Wristers ,  David Wu ,  Hormuzdiar E. Nariman

Inventor： Derick J. Wristers ,  David Wu ,  Hormuzdiar E. Nariman

IPC: H01L27/092 ,  H01L29/786

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L29/1054

Abstract: A method of manufacturing a semiconductor device includes forming a silicon germanium layer and a N-channel transistor and a P-channel transistor over the silicon germanium layer. A beta ratio of the N-channel transistor to the P-channel transistor is about 1.8 to about 2.2. A semiconductor device is also disclosed.

Abstract translation: 制造半导体器件的方法包括在硅锗层上形成硅锗层和N沟道晶体管以及P沟道晶体管。 N沟道晶体管与P沟道晶体管的β比率为约1.8至约2.2。 还公开了一种半导体器件。

公开(公告)号：US07235636B2

公开(公告)日：2007-06-26

申请号：US11042643

申请日：2005-01-24

Applicant: J. H. David Wu ,  Takeshi Omasa ,  Athanassios Mantalaris ,  Yi-Guang Chen ,  Ying-Chuech Tsai

Inventor： J. H. David Wu ,  Takeshi Omasa ,  Athanassios Mantalaris ,  Yi-Guang Chen ,  Ying-Chuech Tsai

IPC: C12N9/00 ,  C12N9/12

CPC classification number: C12N9/1205

Abstract: The present invention provides an isolated nucleic acid sequence encoding a human heme-regulated initiation factor 2 alpha kinase. In addition, the invention provides a method for inhibiting protein synthesis, inducing cellular differentiation, or inhibiting infection in human cells by administering an effective amount of a heme-regulated initiation factor 2 alpha kinase to the cells. Methods are also provided for modulating heme-regulated initiation factor 2 alpha kinase activity and determining the level of heme-regulated initiation factor 2 alpha kinase expression.

Abstract translation: 本发明提供编码人血红素调节的起始因子2α激酶的分离的核酸序列。 此外，本发明提供了通过向细胞施用有效量的血红素调节的起始因子2α激酶来抑制蛋白质合成，诱导细胞分化或抑制人细胞感染的方法。 还提供了用于调节血红素调节的起始因子2α激酶活性并测定血红素调节的起始因子2α激酶表达的水平的方法。

公开(公告)号：USD539523S1

公开(公告)日：2007-04-03

申请号：US29240461

申请日：2005-10-14

Applicant: David Wu

Designer： David Wu

公开(公告)号：US07176095B1

公开(公告)日：2007-02-13

申请号：US10790939

申请日：2004-03-01

Applicant: Akif Sultan ,  David Wu ,  Wen-Jie Qi ,  Mark Fuselier

Inventor： Akif Sultan ,  David Wu ,  Wen-Jie Qi ,  Mark Fuselier

IPC: H01L21/336

CPC classification number: H01L21/26586 ,  H01L29/6659 ,  H01L29/7833

Abstract: Methods of fabricating halo regions are provided. In one aspect, a method is provided of fabricating a first halo region and a second halo region for a circuit device of a first conductivity type and having a gate structure with first and second sidewalls. The first halo region of a second conductivity type is formed by implanting the substrate with impurities in a first direction toward the first sidewall of the gate structure. The second halo region of the second conductivity type is formed by implanting the substrate with impurities in a second direction toward the second sidewall of the gate structure. The first and second halo regions are formed without implanting impurities in a direction substantially perpendicular to the first and second directions.

Abstract translation: 提供制造晕圈的方法。 在一个方面，提供了一种制造用于第一导电类型的电路器件的第一卤素区域和第二卤素区域的方法，并具有具有第一和第二侧壁的栅极结构。 第二导电类型的第一晕区是通过沿着第一方向将杂质注入栅极结构的第一侧壁而形成的。 第二导电类型的第二晕区是通过向栅极结构的第二侧壁向第二方向注入具有杂质的衬底形成的。 形成第一和第二晕圈，而不在基本上垂直于第一和第二方向的方向上植入杂质。