公开(公告)号：US07759215B2

公开(公告)日：2010-07-20

申请号：US11723246

申请日：2007-03-19

Applicant: Hiroyuki Ohta

Inventor： Hiroyuki Ohta

IPC: H01L21/76

CPC classification number: H01L21/76232 ,  H01L21/76224 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/7846

Abstract: The method of manufacturing a semiconductor device has the steps of: etching a semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride film and having a window; depositing a second silicon nitride film covering an inner surface of the isolation trench; forming a first silicon oxide film burying the isolation trench; etching and removing the first silicon oxide film in an upper region of the isolation trench; etching and removing the exposed second silicon nitride film; chemical-mechanical-polishing the second silicon oxide film; and etching and removing the exposed first silicon nitride film.

Abstract translation: 制造半导体器件的方法具有以下步骤：通过使用包括第一氮化硅膜并具有窗口的图案作为掩模来蚀刻半导体衬底以形成隔离沟槽; 沉积覆盖隔离沟槽的内表面的第二氮化硅膜; 形成掩埋隔离沟槽的第一氧化硅膜; 蚀刻并去除隔离沟槽的上部区域中的第一氧化硅膜; 蚀刻和去除暴露的第二氮化硅膜; 化学机械抛光第二氧化硅膜; 并蚀刻和去除暴露的第一氮化硅膜。

公开(公告)号：US20100154555A1

公开(公告)日：2010-06-24

申请号：US12719977

申请日：2010-03-09

Applicant: Takashi Sumigawa ,  Hiroyuki Ohta

Inventor： Takashi Sumigawa ,  Hiroyuki Ohta

IPC: G01B7/16

CPC classification number: G01B7/18 ,  G01B7/16 ,  G01B7/20 ,  G01L1/2206 ,  G01L1/2262 ,  G01L5/0047

Abstract: An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.

Abstract translation: 提供了一种装置结构和测量方法，以保持半导体机械量测量装置的高精度和高可靠性，该装置检测机械量并无线传送测量信息。 对于半导体机械量测量装置的硅衬底，例如，沿着测量方向将衬底厚度与衬底长度的比率设置得较小，并且沿着垂直于半导体机械量测量装置的方向的衬底厚度与衬底长度的比率 测量方向设定得很小。 设备上表面被保护构件覆盖。 可以测量特定方向的应变，实现误差小，精度更高的机械量测量。 可以提高装置本身的耐冲击性和耐环境性。

公开(公告)号：US07707894B2

公开(公告)日：2010-05-04

申请号：US12210261

申请日：2008-09-15

Applicant: Takashi Sumigawa ,  Hiroyuki Ohta

Inventor： Takashi Sumigawa ,  Hiroyuki Ohta

IPC: G01B7/16

CPC classification number: G01B7/18 ,  G01B7/16 ,  G01B7/20 ,  G01L1/2206 ,  G01L1/2262 ,  G01L5/0047

Abstract: An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.

Abstract translation: 提供了一种装置结构和测量方法，以保持半导体机械量测量装置的高精度和高可靠性，该装置检测机械量并无线传送测量信息。 对于半导体机械量测量装置的硅衬底，例如，沿着测量方向将衬底厚度与衬底长度的比率设置得较小，并且沿着垂直于半导体机械量测量装置的方向的衬底厚度与衬底长度的比率 测量方向设定得很小。 设备上表面被保护构件覆盖。 可以测量特定方向的应变，实现误差小，精度更高的机械量测量。 可以提高装置本身的耐冲击性和耐环境性。

公开(公告)号：US07678641B2

公开(公告)日：2010-03-16

申请号：US11211103

申请日：2005-08-25

Applicant: Toshifumi Mori ,  Katsuaki Ookoshi ,  Takashi Watanabe ,  Hiroyuki Ohta

Inventor： Toshifumi Mori ,  Katsuaki Ookoshi ,  Takashi Watanabe ,  Hiroyuki Ohta

IPC: H01L29/00

CPC classification number: H01L21/76224 ,  H01L21/76229 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

Abstract: There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film filling the device isolation trench. At least a surface part of the device isolation insulation film is formed of an HF-resistant film.

Abstract translation: 提供了一种在硅衬底上形成有STI结构的器件隔离区域以限定器件区域的半导体器件，其中器件隔离区域包括形成在硅衬底中的器件隔离沟槽，以及器件隔离绝缘膜填充 器件隔离沟槽。 器件隔离绝缘膜的至少表面部分由耐高温膜形成。

公开(公告)号：US07584668B2

公开(公告)日：2009-09-08

申请号：US11834727

申请日：2007-08-07

Applicant: Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno ,  Yoshihisa Kiyotoki ,  Kenji Onodera ,  Kenji Araki

Inventor： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno ,  Yoshihisa Kiyotoki ,  Kenji Onodera ,  Kenji Araki

IPC: G01B7/16

CPC classification number: G01B7/18 ,  F16K37/0083

Abstract: A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

Abstract translation: 根据本发明的阀装置的监测系统包括包括桥接电路的半导体单晶衬底和包括杂质扩散电阻器的桥接电路。 半导体单晶衬底安装在设置在驱动轴端部的阀装置的阀杆，阀杆，驱动轴或弹性体中的任一个上。 通过半导体单晶衬底测量阀装置的推力和扭矩，然后测量值用于监测阀装置。

公开(公告)号：US20090199650A1

公开(公告)日：2009-08-13

申请号：US12429123

申请日：2009-04-23

Applicant: Hiromi Shimazu ,  Hiroyuki Ohta

Inventor： Hiromi Shimazu ,  Hiroyuki Ohta

IPC: G01B7/16

CPC classification number: G01B7/18

Abstract: It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.

Abstract translation: 其目的是防止由于大的变形而由单晶硅衬底制成的机械量测量装置的破损。 用于测量变形的安装板设置在由具有失真检测单元的半导体单晶衬底制成的传感器芯片的后表面上。 即使在要测量的对象发生大的失真，也可以通过安装基板来控制在半导体单晶衬底中发生的变形。 因此，半导体单晶衬底不会破裂，并且可以提供高度可靠的机械量测量装置。

公开(公告)号：US07518202B2

公开(公告)日：2009-04-14

申请号：US11349913

申请日：2006-02-09

Applicant: Hisashi Tanie ,  Takashi Sumigawa ,  Hiroyuki Ohta

Inventor： Hisashi Tanie ,  Takashi Sumigawa ,  Hiroyuki Ohta

IPC: H01L29/84

CPC classification number: G01B7/18 ,  G01L1/2293

Abstract: A semiconductor mechanical quantity measuring apparatus in which the reverse surface of a strain-detecting semiconductor element is bonded to an object of measurement, and a member having a small elastic modulus is interposed between the wiring board for supporting the strain-detecting semiconductor element and the strain-detecting semiconductor element. It then becomes possible to reduce an undesirable effect that the rigidity and thermal deformation of the wiring board have on the strain-detecting semiconductor element, while supporting the strain-detecting semiconductor element.

Abstract translation: 一种半导体机械量测量装置，其中应变检测用半导体元件的反面与测量对象接合，并且具有小弹性模量的构件插入在用于支撑应变检测用半导体元件的布线基板和 应变检测半导体元件。 然后，可以减少在应变检测用半导体元件上配线基板的刚性和热变形对应变检测用半导体元件的不良影响。

公开(公告)号：US20090031822A1

公开(公告)日：2009-02-05

申请号：US12245291

申请日：2008-10-03

Applicant: Hiroyuki OHTA ,  Takashi Sumigawa

Inventor： Hiroyuki OHTA ,  Takashi Sumigawa

IPC: G01L3/00

CPC classification number: G01L3/108 ,  G01L1/18 ,  G01L1/2293 ,  G01L3/10

Abstract: A single crystal semiconductor including a Wheatstone bridge circuit formed of an impurity diffusion layer whose longitudinal direction is aligned with a particular crystal orientation is connected to a rotating body. A rotating body dynamic quantity measuring device and a system using the measuring device are fatigue- and corrosion-resistant because of the single crystal semiconductor used and are not easily affected by temperature variations because of the bridge circuit considering a single crystal anisotropy.

Abstract translation: 包括由纵向与特定晶体取向对准的杂质扩散层形成的惠斯通电桥电路的单晶半导体连接到旋转体。 旋转体动量测量装置和使用该测量装置的系统由于使用单晶半导体而具有耐疲劳和耐腐蚀性，并且由于考虑到单晶各向异性的桥式电路，不容易受到温度变化的影响。

公开(公告)号：US20090007686A1

公开(公告)日：2009-01-08

申请号：US12210261

申请日：2008-09-15

Applicant: Takashi SUMIGAWA ,  Hiroyuki Ohta

Inventor： Takashi SUMIGAWA ,  Hiroyuki Ohta

IPC: G01B7/16

CPC classification number: G01B7/18 ,  G01B7/16 ,  G01B7/20 ,  G01L1/2206 ,  G01L1/2262 ,  G01L5/0047

Abstract: An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.

Abstract translation: 提供了一种装置结构和测量方法，以保持半导体机械量测量装置的高精度和高可靠性，该装置检测机械量并无线传送测量信息。 对于半导体机械量测量装置的硅衬底，例如，沿着测量方向将衬底厚度与衬底长度的比率设置得较小，并且沿着垂直于半导体机械量测量装置的方向的衬底厚度与衬底长度的比率 测量方向设定得很小。 设备上表面被保护构件覆盖。 可以测量特定方向的应变，实现误差小，精度更高的机械量测量。 可以提高装置本身的耐冲击性和耐环境性。

公开(公告)号：US07459786B2

公开(公告)日：2008-12-02

申请号：US11155272

申请日：2005-06-17

Applicant: Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Kensuke Ishikawa ,  Osamu Inoue ,  Takayuki Oshima

Inventor： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Kensuke Ishikawa ,  Osamu Inoue ,  Takayuki Oshima

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.

Abstract translation: 具有由铜作为主要成分材料形成的多层布线结构的可靠的半导体器件，其限制由应力迁移引起的空隙的发生。 在多层布线结构体中，具有高阻隔性和压缩应力的第一绝缘层，与由铜作为主要成分材料的第一布线的上表面接触，具有拉伸应力的第二绝缘膜，以及 具有低于第一绝缘膜和第二绝缘膜的介电常数的第三绝缘膜按照从底部开始的顺序依次层叠，并且形成穿过第一绝缘膜的通孔， 第二绝缘膜和第三绝缘膜，与第一布线接触。