Method for purifying human granulocyte-colony stimulating factor from recombinant E. coli
    41.
    发明授权
    Method for purifying human granulocyte-colony stimulating factor from recombinant E. coli 有权
    从重组大肠杆菌纯化人粒细胞集落刺激因子的方法

    公开(公告)号:US09193761B2

    公开(公告)日:2015-11-24

    申请号:US13881637

    申请日:2011-10-26

    CPC classification number: C07K1/36 C07K14/535

    Abstract: The present invention provides a method for purifying a large amount of human granulocyte-colony stimulating factors (hG-CSFs) from a recombinant E. coli with high yield and purity. According to the method of the present invention, human granulocyte-colony stimulating factor, identical to the native form expressed in the human body, can be easily purified with high yield and purity without an additional activation process. In particular, according to the purification method of the present invention, hG-CSF variants expressed in E. coli are efficiently removed to obtain physiologically active hG-CSFs with high purity.

    Abstract translation: 本发明提供从重组大肠杆菌以高产率和纯度纯化大量人粒细胞集落刺激因子(hG-CSF)的方法。 根据本发明的方法,与人体中表达的天然形式相同的人粒细胞集落刺激因子可以容易地以高产率和纯度纯化而没有额外的活化过程。 特别地,根据本发明的纯化方法,有效地除去在大肠杆菌中表达的hG-CSF变体,以获得高纯度的生理学活性的hG-CSF。

    Drive amplifier
    43.
    发明授权
    Drive amplifier 有权
    驱动放大器

    公开(公告)号:US08410852B2

    公开(公告)日:2013-04-02

    申请号:US13180114

    申请日:2011-07-11

    Abstract: A drive amplifier having improved linearity while being characterized by low current consumption. The drive amplifier includes first and second transistors having a gate to which first and second differential Radio Frequency (RF) voltages are respectively input; a third transistor which has a drain connected to a drain of the second transistor and a source connected to the gate of the first transistor, and a drain-source current which increases with an increase in the second differential RF voltage; and a fourth transistor which has a drain connected to a drain of the first transistor and a source connected to the gate of the second transistor, and a drain-source current which increases with an increase in the first differential RF voltage.

    Abstract translation: 一种驱动放大器,具有改善的线性度,同时具有低电流消耗。 驱动放大器包括第一和第二晶体管,其具有分别输入第一和第二差分射频(RF)电压的栅极; 具有连接到所述第二晶体管的漏极的漏极和连接到所述第一晶体管的栅极的源极的第三晶体管,以及随着所述第二差分RF电压的增加而增加的漏极 - 源极电流; 以及第四晶体管,其具有连接到所述第一晶体管的漏极的漏极和连接到所述第二晶体管的栅极的源极,以及随着所述第一差分RF电压的增加而增加的漏极 - 源极电流。

    Nonvolatile memory device and related programming method
    45.
    发明授权
    Nonvolatile memory device and related programming method 有权
    非易失性存储器件及相关编程方法

    公开(公告)号:US08295084B2

    公开(公告)日:2012-10-23

    申请号:US12786732

    申请日:2010-05-25

    Applicant: Jong soo Lee

    Inventor: Jong soo Lee

    CPC classification number: G11C16/10 G11C11/5628 G11C16/3418 G11C16/3427

    Abstract: A method of programming a nonvolatile memory device comprises receiving program data, detecting logic states of the received program data, identifying adjusted margins to be applied to programmed memory cells based on the absence of one or more logic states in the detected logic states, and programming the program data in selected memory cells using the adjusted margins.

    Abstract translation: 一种编程非易失性存储器件的方法包括接收程序数据,检测所接收的程序数据的逻辑状态,基于检测到的逻辑状态中不存在一个或多个逻辑状态来识别要应用于编程的存储器单元的调整余量,以及编程 所选存储单元中的程序数据使用调整后的边距。

    DRIVE AMPLIFIER
    46.
    发明申请
    DRIVE AMPLIFIER 有权
    驱动放大器

    公开(公告)号:US20120007676A1

    公开(公告)日:2012-01-12

    申请号:US13180114

    申请日:2011-07-11

    Abstract: A drive amplifier having improved linearity while being characterized by low current consumption. The drive amplifier includes first and second transistors having a gate to which first and second differential Radio Frequency (RF) voltages are respectively input; a third transistor which has a drain connected to a drain of the second transistor and a source connected to the gate of the first transistor, and a drain-source current which increases with an increase in the second differential RF voltage; and a fourth transistor which has a drain connected to a drain of the first transistor and a source connected to the gate of the second transistor, and a drain-source current which increases with an increase in the first differential RF voltage.

    Abstract translation: 一种驱动放大器,具有改善的线性度,同时具有低电流消耗。 驱动放大器包括第一和第二晶体管,其具有分别输入第一和第二差分射频(RF)电压的栅极; 具有连接到所述第二晶体管的漏极的漏极和连接到所述第一晶体管的栅极的源极的第三晶体管,以及随着所述第二差分RF电压的增加而增加的漏极 - 源极电流; 以及第四晶体管,其具有连接到所述第一晶体管的漏极的漏极和连接到所述第二晶体管的栅极的源极,以及随着所述第一差分RF电压的增加而增加的漏极 - 源极电流。

    POWER CONNECTION STRUCTURE OF DRIVER IC CHIP
    47.
    发明申请
    POWER CONNECTION STRUCTURE OF DRIVER IC CHIP 有权
    驱动IC芯片的电源连接结构

    公开(公告)号:US20110248972A1

    公开(公告)日:2011-10-13

    申请号:US13081043

    申请日:2011-04-06

    Abstract: A power connection structure of a driver IC chip including a first power terminal unit formed on one side thereof, a second power terminal unit formed on the other side thereof, and a dummy power terminal unit formed between the first power terminal unit and the second power terminal unit. The driver IC chip is mounted to a liquid crystal panel of a liquid crystal display device in a chip-on-glass (COG) type. Both of the first power terminal unit and the dummy power terminal unit and both of the dummy power terminal unit and the second power terminal unit are connected through routing lines in the driver IC chip.

    Abstract translation: 驱动器IC芯片的电源连接结构,包括形成在其一侧的第一电力端子单元,形成在其另一侧的第二电力端子单元和形成在第一电力端子单元和第二电力之间的虚拟电源端子单元 终端单元。 驱动IC芯片安装在玻璃(COG)型液晶显示装置的液晶面板上。 第一电源端子单元和虚拟电源端子单元以及虚拟电源端子单元和第二电力端子单元都通过驱动器IC芯片中的布线来连接。

    AMPHIBIOUS FIGHTING VEHICLE RUNNING ON LAND AND WATER SURFACES
    48.
    发明申请
    AMPHIBIOUS FIGHTING VEHICLE RUNNING ON LAND AND WATER SURFACES 有权
    强大的车辆在陆地和水面上运行

    公开(公告)号:US20110111651A1

    公开(公告)日:2011-05-12

    申请号:US12847581

    申请日:2010-07-30

    Applicant: Jong Soo LEE

    Inventor: Jong Soo LEE

    CPC classification number: F41H7/02 B60F3/0061 Y02T70/121

    Abstract: An amphibious fighting vehicle capable of moving on a water surface including a front planing tracked belt disposed on a front portion of the amphibious fighting vehicle, a rear driving tracked belt, side buoys disposed on lateral sides of the amphibious fighting vehicle, a rear buoy disposed on a rear end of the amphibious fighting vehicle, the buoys assisting in setting an immersion line of the amphibious fighting vehicle at a predetermined value, and a set of identical engines that propel the amphibious fighting vehicle at a speed sufficient for movement on the water surface and a land surface.

    Abstract translation: 一种能够在水面上移动的两栖战车,包括设置在两栖战斗车辆的前部的前刨动履带,后驱动履带,设置在水陆两用战车的侧面的侧浮标,后浮标布置 在两栖战斗车辆的后端,辅助将水陆两用车辆的浸入线设定在预定值的浮标以及以足以在水面上移动的速度推进两栖战斗车辆的一组相同的发动机 和地面。

    Flash memory device and refresh method thereof
    49.
    发明授权
    Flash memory device and refresh method thereof 失效
    闪存设备及其刷新方法

    公开(公告)号:US07697359B2

    公开(公告)日:2010-04-13

    申请号:US11783173

    申请日:2007-04-06

    Applicant: Jong-Soo Lee

    Inventor: Jong-Soo Lee

    CPC classification number: G11C16/3418 G11C11/406 G11C11/40622 G11C16/3431

    Abstract: A method for refreshing a flash memory device includes providing first and second refresh fields that include a plurality of memory blocks, and determining, when there is a request for a refresh, a condition of a memory block to be refreshed in accordance with which of the first and second refresh fields includes the memory block to be refreshed.

    Abstract translation: 一种刷新闪速存储器件的方法包括:提供包括多个存储器块的第一和第二刷新场,以及当存在要刷新的请求时,确定要刷新的存储器块的状态, 第一和第二刷新字段包括要刷新的存储器块。

    Flash memory device employing disturbance monitoring scheme
    50.
    发明授权
    Flash memory device employing disturbance monitoring scheme 失效
    闪存器件采用干扰监测方案

    公开(公告)号:US07554847B2

    公开(公告)日:2009-06-30

    申请号:US11730291

    申请日:2007-03-30

    Applicant: Jong-Soo Lee

    Inventor: Jong-Soo Lee

    CPC classification number: G11C7/18 G11C7/02 G11C16/0483 G11C16/3418

    Abstract: A flash memory device comprises a memory cell array including a plurality of NAND strings respectively connected to a plurality of bit lines, and further comprising a disturbed string coupled to a disturbed bit line. In a program operation of the flash memory device, a voltage level of the disturbed bit line is detected to detect program or pass voltage disturbance in the memory cell array.

    Abstract translation: 闪速存储器件包括存储单元阵列,该存储单元阵列包括分别连接到多个位线的多个NAND串,并且还包括耦合到受干扰的位线的被干扰的串。 在闪速存储器件的编程操作中,检测干扰位线的电压电平以检测存储器单元阵列中的程序或通过电压干扰。

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