公开(公告)号：US08059083B2

公开(公告)日：2011-11-15

申请号：US11696645

申请日：2007-04-04

Applicant: Seong-Sik Shin ,  Jong-Seo Lee ,  Jung-Suk Han ,  Tae-Jong Jun ,  Joo-Young Lee

Inventor： Seong-Sik Shin ,  Jong-Seo Lee ,  Jung-Suk Han ,  Tae-Jong Jun ,  Joo-Young Lee

IPC: G09G3/36 ,  G09G3/32 ,  G09F13/04

CPC classification number: G09G3/3413 ,  G09G3/342 ,  G09G2310/0232 ,  G09G2310/0235 ,  G09G2310/024 ,  G09G2310/08 ,  G09G2320/0233

Abstract: An LCD apparatus displays a color image of a frame divided into a plurality of periods in which different colors are displayed. The LCD apparatus includes an LCD panel and a number of light-emitting units. The LCD panel includes a plurality of gate lines and a plurality of data lines crossing the plurality of the gate lines. The light-emitting units generate different colors in each of the periods such that an outermost light-emitting unit emits light longer than a second outermost light-emitting unit thereby enhancing luminance uniformity.

Abstract translation: 液晶显示装置显示被划分成显示不同颜色的多个周期的帧的彩色图像。 LCD装置包括LCD面板和多个发光单元。 LCD面板包括多条栅极线和与多条栅极线交叉的多条数据线。 发光单元在每个周期中产生不同的颜色，使得最外侧发光单元比第二最外侧发光单元发光更长，从而提高亮度均匀性。

公开(公告)号：US07985651B2

公开(公告)日：2011-07-26

申请号：US12318384

申请日：2008-12-29

Applicant: Joo-Young Lee ,  Jin-Woo Lee

Inventor： Joo-Young Lee ,  Jin-Woo Lee

IPC: H01L21/336

CPC classification number: H01L29/66621 ,  H01L21/26586 ,  H01L21/2822 ,  H01L29/42368

Abstract: A semiconductor device and method of fabricating a semiconductor device are provided. The method includes forming a gate trench in a semiconductor substrate to define source/drain regions. The source/drain regions are separated from each other by the gate trench, and the semiconductor substrate is exposed through the gate trench. The semiconductor substrate has impurities of a first conductivity type. The source/drain regions have impurities of a second conductivity type different from the first conductivity type. The concentration of the second conductivity type impurities increases as the impurities approach the surfaces of the source/drain regions. A differential gate dielectric layer is formed along the surfaces of the source/drain regions and the semiconductor substrate exposed through the gate trench. A gate electrode filling the gate trench is formed. The differential gate dielectric layer has a first thickness between the gate electrode and the semiconductor substrate and has a second thickness greater than the first thickness between the gate electrode and the source/drain regions.

Abstract translation: 提供一种制造半导体器件的半导体器件和方法。 该方法包括在半导体衬底中形成栅极沟槽以限定源极/漏极区域。 源极/漏极区域通过栅极沟槽彼此分离，并且半导体衬底通过栅极沟槽暴露。 半导体衬底具有第一导电类型的杂质。 源极/漏极区域具有不同于第一导电类型的第二导电类型的杂质。 随着杂质接近源极/漏极区域的表面，第二导电型杂质的浓度增加。 沿着源极/漏极区域和通过栅极沟槽暴露的半导体衬底的表面形成差分栅极介电层。 形成填充栅极沟槽的栅电极。 差分栅极介电层在栅电极和半导体衬底之间具有第一厚度，并且具有大于栅极电极和源极/漏极区域之间的第一厚度的第二厚度。

公开(公告)号：US20110125733A1

公开(公告)日：2011-05-26

申请号：US12625893

申请日：2009-11-25

Applicant: Nathan J. Fish ,  Jeremy M. Santy ,  Jeffrey Berg ,  Cedric P. Dussud ,  Joo-Young Lee ,  Derek M. Hans

Inventor： Nathan J. Fish ,  Jeremy M. Santy ,  Jeffrey Berg ,  Cedric P. Dussud ,  Joo-Young Lee ,  Derek M. Hans

IPC: G06F3/048 ,  G06F17/30

CPC classification number: G06F3/0481 ,  G06F16/90324

Abstract: Users are enabled to perform tasks such as creating new content, searching for items, communicating with other users through a simplified access interface, at the same time defining a location for the access interface. A user may begin typing at any location on a canvas. The system ranks possible outcomes, suggesting one as the best match, where the user can override that choice upon which the resulting action is displayed at the point the input was initially placed. The user may be provided options to select among available tasks and the tasks may be performed without selecting an application.

Abstract translation: 用户可以执行诸如创建新内容，搜索项目，通过简化的访问接口与其他用户进行通信的任务，同时定义访问接口的位置。 用户可以在画布上的任何位置开始打字。 系统排列可能的结果，建议一个作为最佳匹配，用户可以在最初放置输入点的位置覆盖显示结果的操作的选项。 可以向用户提供在可用任务之间选择的选项，并且可以在不选择应用的情况下执行任务。

公开(公告)号：US20100073641A1

公开(公告)日：2010-03-25

申请号：US12563020

申请日：2009-09-18

Applicant: Jung-Suk Han ,  Jong-Seo Lee ,  Tae-Jong Jun ,  Joo-Young Lee ,  Soo-Lin Kim

Inventor： Jung-Suk Han ,  Jong-Seo Lee ,  Tae-Jong Jun ,  Joo-Young Lee ,  Soo-Lin Kim

IPC: G03B3/10 ,  G03B21/14

CPC classification number: G03B21/13 ,  G02B5/06 ,  G02B26/005 ,  G02B27/1066 ,  G02B27/126 ,  G02F1/13336 ,  G02F1/133526 ,  G02F2001/133388 ,  G03B21/625

Abstract: A liquid crystal display is provided having improved image quality and visibility. The display device includes: a plurality of display panels which display multiple images from multiple display panels; a projection film which overlaps the display panels; and a lens panel including a first lens unit and a second lens unit is interposed between the display panel and the projection film. The first lens unit refracts images and the second lens unit improves image brightness. Therefore the resultant projection is a seamlessly connected image from the multiple display panels.

Abstract translation: 提供了具有改善的图像质量和可视性的液晶显示器。 显示装置包括：多个显示面板，其从多个显示面板显示多个图像; 与显示面板重叠的投影膜; 并且包括第一透镜单元和第二透镜单元的透镜面板插入在显示面板和投影膜之间。 第一透镜单元折射图像，并且第二透镜单元提高图像亮度。 因此，所得到的投影是来自多个显示面板的无缝连接的图像。

公开(公告)号：US20090176342A1

公开(公告)日：2009-07-09

申请号：US12318384

申请日：2008-12-29

Applicant: Joo-Young Lee ,  Jin-Woo Lee

Inventor： Joo-Young Lee ,  Jin-Woo Lee

IPC: H01L21/336

CPC classification number: H01L29/66621 ,  H01L21/26586 ,  H01L21/2822 ,  H01L29/42368

Abstract: A semiconductor device and method of fabricating a semiconductor device are provided. The method includes forming a gate trench in a semiconductor substrate to define source/drain regions. The source/drain regions are separated from each other by the gate trench, and the semiconductor substrate is exposed through the gate trench. The semiconductor substrate has impurities of a first conductivity type. The source/drain regions have impurities of a second conductivity type different from the first conductivity type. The concentration of the second conductivity type impurities increases as the impurities approach the surfaces of the source/drain regions. A differential gate dielectric layer is formed along the surfaces of the source/drain regions and the semiconductor substrate exposed through the gate trench. A gate electrode filling the gate trench is formed. The differential gate dielectric layer has a first thickness between the gate electrode and the semiconductor substrate and has a second thickness greater than the first thickness between the gate electrode: and the source/drain regions.

Abstract translation: 提供一种制造半导体器件的半导体器件和方法。 该方法包括在半导体衬底中形成栅极沟槽以限定源极/漏极区域。 源极/漏极区域通过栅极沟槽彼此分离，并且半导体衬底通过栅极沟槽暴露。 半导体衬底具有第一导电类型的杂质。 源极/漏极区域具有不同于第一导电类型的第二导电类型的杂质。 随着杂质接近源极/漏极区域的表面，第二导电型杂质的浓度增加。 沿着源极/漏极区域和通过栅极沟槽暴露的半导体衬底的表面形成差分栅极介电层。 形成填充栅极沟槽的栅电极。 差分栅极介电层在栅电极和半导体衬底之间具有第一厚度，并且具有大于栅极电极与源极/漏极区域之间的第一厚度的第二厚度。

公开(公告)号：US07327259B2

公开(公告)日：2008-02-05

申请号：US11091366

申请日：2005-03-29

Applicant: Ju Han Kim ,  Joo Young Lee ,  Ki Young Moon ,  Jong Soo Jang ,  Sung Won Sohn

Inventor： Ju Han Kim ,  Joo Young Lee ,  Ki Young Moon ,  Jong Soo Jang ,  Sung Won Sohn

IPC: G08B13/14

CPC classification number: H04N1/2179 ,  G06F17/30011 ,  G06F21/608 ,  G06Q10/10 ,  H04N1/00209 ,  H04N1/00342 ,  H04N1/00854 ,  H04N1/2187 ,  H04N1/2191 ,  H04N2201/0082 ,  H04N2201/3269

Abstract: Provided are a method and an apparatus for managing online and offline documents using RFID technology. The method includes: pre-registering online and offline documents using radio frequency identification tag information stored in at least one of the online and offline documents to be output; determining whether the pre-registered online and offline documents are authorized to be output; and if it is determined that the pre-registered online and offline documents are authorized to be output, generating documents of the online and offline documents to be output and storing new radio frequency identification tag information in radio frequency identification tags attached to the documents to be output.

Abstract translation: 提供了一种使用RFID技术管理在线和离线文档的方法和装置。 该方法包括：使用存储在要输出的在线和离线文档中的至少一个的射频识别标签信息预先注册在线和离线文档; 确定预注册的在线和离线文档是否被授权输出; 并且如果确定预先注册的在线和离线文档被授权输出，则生成要输出的在线和离线文档的文档，并将附加到文档的射频识别标签中的新的射频识别标签信息存储为 输出。

公开(公告)号：US20070236446A1

公开(公告)日：2007-10-11

申请号：US11696645

申请日：2007-04-04

Applicant: Seong-Sik Shin ,  Jong-Seo Lee ,  Jung-Suk Han ,  Tae-Jong Jun ,  Joo-Young Lee

Inventor： Seong-Sik Shin ,  Jong-Seo Lee ,  Jung-Suk Han ,  Tae-Jong Jun ,  Joo-Young Lee

IPC: G09G3/36

CPC classification number: G09G3/3413 ,  G09G3/342 ,  G09G2310/0232 ,  G09G2310/0235 ,  G09G2310/024 ,  G09G2310/08 ,  G09G2320/0233

Abstract: An LCD apparatus displays a color image of a frame divided into a plurality of periods in which different colors are displayed. The LCD apparatus includes an LCD panel and a number of light-emitting units. The LCD panel includes a plurality of gate lines and a plurality of data lines crossing the plurality of the gate lines. The light-emitting units generate different colors in each of the periods such that an outermost light-emitting unit emits light longer than a second outermost light-emitting unit thereby enhancing luminance uniformity.

Abstract translation: 液晶显示装置显示被划分成显示不同颜色的多个周期的帧的彩色图像。 LCD装置包括LCD面板和多个发光单元。 LCD面板包括多条栅极线和与多条栅极线交叉的多条数据线。 发光单元在每个周期中产生不同的颜色，使得最外侧发光单元比第二最外侧发光单元发光更长，从而提高亮度均匀性。

公开(公告)号：US6053271A

公开(公告)日：2000-04-25

申请号：US998462

申请日：1997-12-26

Applicant: Joo-Young Lee

Inventor： Joo-Young Lee

IPC: E05F15/10 ,  B60J1/17 ,  B60R21/16 ,  E05F11/48 ,  E05F15/16 ,  E05F15/20 ,  B60K28/12 ,  B60K28/14

CPC classification number: B60R21/164 ,  E05F15/72 ,  E05F11/486 ,  E05F15/689 ,  E05Y2201/422 ,  E05Y2400/44 ,  E05Y2800/67 ,  E05Y2900/55

Abstract: A device, for automatically opening a side window glass synchronously with an expansion of ESPS (electric single point sensing system) air bags, is disclosed. The device includes a window carrier movably engaging with a guide channel, and a regulator motor connected to the carrier by a cable. The device also includes a window glass module provided at the upper portion of the guide channel so as to be selectively operated by a self-diagnosis impact sensor of the air bags in the event of an expansion of the air bags, thus forcibly lowering said carrier along with the side window glass by means of the explosive power in such an expansion.

Abstract translation: 公开了一种用于与ESPS（电单点感测系统）气囊的扩展同步地自动打开侧窗玻璃的装置。 该装置包括与引导通道可移动地接合的窗口托架，以及通过电缆连接到托架的调节器马达。 该装置还包括设置在引导通道的上部的窗玻璃模块，以便在气囊膨胀的情况下由安全气囊的自诊断冲击传感器选择性地操作，从而强制地降低所述载体 与侧窗玻璃一起通过爆炸力进行这种扩张。

公开(公告)号：US5935875A

公开(公告)日：1999-08-10

申请号：US785091

申请日：1997-01-21

Applicant: Joo-young Lee

Inventor： Joo-young Lee

IPC: H01L27/108 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/302

CPC classification number: H01L27/10873 ,  H01L21/8234 ,  H01L27/10894 ,  H01L27/10852

Abstract: A second insulating layer is used to mask a first insulating layer on a second gate electrode, during fabrication of a conductive contact adjacent a first gate electrode which is spaced apart from the second gate electrode. By using the second insulating layer as a sacrificial insulating layer during etching of the conductive contact, thinning of the first insulating layer on the second gate electrode may be prevented. In particular, first and second spaced apart gate electrodes are formed on an integrated circuit surface. The first and second spaced apart gate electrodes include first and second sidewalls, respectively. The first insulating layer and the second insulating layer are formed on the integrated circuit surface, including on the first and second gate electrodes. The second insulating layer is removed from the first gate. The first insulating layer is etched on the first gate to thereby form first spacers on the first sidewalls. A conductive contact is formed on the integrated circuit face, adjacent the first gate electrode and extending onto the first sidewall. The second insulating layer is removed from on the second gate and the first insulating layer is etched on the second gate, to thereby form second spacers on the second sidewalls.

Abstract translation: 在与第二栅电极间隔开的第一栅极附近的导电接触的制造期间，第二绝缘层用于掩蔽第二栅电极上的第一绝缘层。 通过在导电接触的蚀刻期间使用第二绝缘层作为牺牲绝缘层，可以防止第二栅电极上的第一绝缘层的薄化。 特别地，第一和第二间隔开的栅电极形成在集成电路表面上。 第一和第二间隔开的栅电极分别包括第一和第二侧壁。 第一绝缘层和第二绝缘层形成在集成电路表面上，包括在第一和第二栅电极上。 第二绝缘层从第一栅极去除。 在第一栅极上蚀刻第一绝缘层，从而在第一侧壁上形成第一间隔物。 导电接触形成在集成电路面上，与第一栅电极相邻并延伸到第一侧壁上。 从第二栅极上去除第二绝缘层，在第二栅极上蚀刻第一绝缘层，从而在第二侧壁上形成第二间隔物。

公开(公告)号：US5763323A

公开(公告)日：1998-06-09

申请号：US687055

申请日：1996-08-07

Applicant: Do-hyung Kim ,  Joo-young Lee ,  Young-so Park

Inventor： Do-hyung Kim ,  Joo-young Lee ,  Young-so Park

IPC: H01L21/28 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L27/11519 ,  H01L27/10808 ,  H01L27/10844 ,  Y10S257/905 ,  Y10S438/97

Abstract: A method for fabricating an integrated circuit device includes the steps of forming an insulating layer on a substrate and forming a plurality of parallel conductive lines on the insulating layer. An etch barrier is formed on each of the parallel conductive lines, and contact holes are formed between the etch barriers. The contact holes expose portions of the substrate without exposing the plurality of parallel conductive lines. In particular, the contact holes can be formed by forming a patterned mask layer on the insulating layer and etch barriers, and etching exposed portions of the insulating layer. The patterned mask layer selectively exposes a plurality of parallel strips orthogonal to the plurality of parallel conductive lines. Related structures are also discussed.

Abstract translation: 一种用于制造集成电路器件的方法包括以下步骤：在衬底上形成绝缘层，并在绝缘层上形成多条平行的导线。 在每个平行的导线上形成蚀刻阻挡层，并且在蚀刻阻挡层之间形成接触孔。 接触孔露出基板的部分，而不暴露多条平行导线。 特别地，可以通过在绝缘层上形成图案化掩模层并蚀刻阻挡层并蚀刻绝缘层的暴露部分来形成接触孔。 图案化掩模层选择性地暴露与多个平行导线垂直的多个平行条带。 还讨论了相关结构。