公开(公告)号：US5881184A

公开(公告)日：1999-03-09

申请号：US821550

申请日：1997-03-21

申请人： Robert M. Guidash

发明人： Robert M. Guidash

IPC分类号： H01L27/146 ,  G06K9/00

CPC分类号： H01L27/14654

摘要： An active pixel image sensing device that provides uniform integration periods and either independent pixel reset, row, pixel reset, or column pixel reset, having a plurality of photodetector elements arranged in a matrix of rows and columns, each of the photodetectors having a transfer gate operatively connecting the photodetectors to a floating diffusion and further including a reset and clamp and sample function. A reset transistor for each row of photodetectors having a gate that can have a predetermined voltage applied to reset each row, and a column reset transistor for each column of photodetectors having a gate that can have a predetermined voltage applied to reset each column. This allows for uniform integration periods and a signal sample and clamp circuit for the entire array of photodetectors.

摘要翻译： 一种主动像素图像感测装置，其提供均匀的积分周期和独立的像素复位，行，像素复位或列像素复位，其具有以行和列的矩阵排列的多个光电检测器元件，每个光电检测器具有传输门 将光电检测器可操作地连接到浮动扩散，并且还包括复位和钳位和采样功能。 用于每行光电检测器的复位晶体管具有可以具有施加到每行的预定电压的栅极，以及用于每列光电探测器的列复位晶体管，该栅极具有施加预定电压以复位每一列的栅极。 这允许均匀的积分周期和用于整个光电检测器阵列的信号采样和钳位电路。

公开(公告)号：US5841159A

公开(公告)日：1998-11-24

申请号：US770414

申请日：1996-12-20

申请人： Paul P. Lee ,  Robert M. Guidash ,  Teh-Hsuang Lee ,  Eric Gordon Stevens

发明人： Paul P. Lee ,  Robert M. Guidash ,  Teh-Hsuang Lee ,  Eric Gordon Stevens

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14831

摘要： The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

摘要翻译： 两种技术（CMOS和CCD）的优化，其中钉扎光电二极管集成到有源像素传感器的图像感测元件中。 固定光电二极管通过CCD工艺步骤制造成有源像素架构。 集成在有源像素钉扎光电二极管内的电荷通过传输门传输到电荷感测节点。 浮动扩散是耦合的CMOS电路，可以提供各个像素的寻址能力。 或者，可以使用掩埋通道光电容器代替被钉扎的光电二极管。

公开(公告)号：US08253214B2

公开(公告)日：2012-08-28

申请号：US11440894

申请日：2006-05-25

申请人： Robert M. Guidash ,  Ravi Mruthyunjaya ,  Weize Xu

发明人： Robert M. Guidash ,  Ravi Mruthyunjaya ,  Weize Xu

IPC分类号： H01L31/02

CPC分类号： H01L27/14641 ,  H01L27/14609

摘要： An image sensor includes a unit cell having a plurality of pixels; the unit cell comprising an amplifier input transistor that is shared by the plurality of pixels; a plurality of floating diffusions that are joined by a floating diffusion interconnect layer and are connected to the amplifier input transistor; and an interconnect layer which forms an output signal wire which shields the floating diffusion interconnect layer.

摘要翻译： 图像传感器包括具有多个像素的单位单元; 所述单元包括由所述多个像素共享的放大器输入晶体管; 多个浮动扩散，其通过浮动扩散互连层连接并连接到放大器输入晶体管; 以及形成屏蔽浮动扩散互连层的输出信号线的互连层。

公开(公告)号：US20120105635A1

公开(公告)日：2012-05-03

申请号：US12912790

申请日：2010-10-27

申请人： Herbert J. Erhardt ,  Robert M. Guidash

发明人： Herbert J. Erhardt ,  Robert M. Guidash

IPC分类号： H04N7/18

CPC分类号： G07C5/085 ,  B60R25/102 ,  G07C5/008 ,  G07C5/0866 ,  G07C5/0891 ,  G08B13/19647 ,  G08B13/19671 ,  G08B13/19697 ,  G08B25/016

摘要： A motor vehicle system for automatically reporting exception events, comprising: one or more digital cameras, at least one digital camera having a primary function; an image memory system for storing digital images; means for detecting exception events; and a wireless communications system for communicating with a central reporting service. A program memory stores executable instruction for causing a processor to perform the steps of: using at least one of the digital cameras to periodically capture digital images at a specified capture frequency; storing the periodically captured digital images in the image memory for a specified period of time; and receiving input from the means for detecting an exception event. In response to the detection of an exception event a communication link is opened to the central reporting service using the wireless communications system, and one or more of the captured digital images are transmitted to the central reporting service.

摘要翻译： 一种用于自动报告异常事件的机动车辆系统，包括：一个或多个数字照相机，具有主要功能的至少一个数字照相机; 用于存储数字图像的图像存储系统; 用于检测异常事件的手段; 以及用于与中央报告服务进行通信的无线通信系统。 程序存储器存储用于使处理器执行以下步骤的可执行指令：使用所述数码相机中的至少一个周期性地以指定的捕获频率捕获数字图像; 将周期性捕获的数字图像存储在图像存储器中指定的时间段; 以及从用于检测异常事件的装置接收输入。 响应于异常事件的检测，使用无线通信系统向中央报告服务打开通信链路，并且将一个或多个捕获的数字图像发送到中央报告服务。

公开(公告)号：US20120080733A1

公开(公告)日：2012-04-05

申请号：US12966224

申请日：2010-12-13

申请人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

发明人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

摘要翻译： 浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。 浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。 第二电介质结构设置在钉扎层之上。 电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

公开(公告)号：US20110216209A1

公开(公告)日：2011-09-08

申请号：US12716304

申请日：2010-03-03

申请人： John R. Fredlund ,  Kenneth A. Parulski ,  Robert M. Guidash ,  Kevin E. Spaulding ,  Frank Razavi

发明人： John R. Fredlund ,  Kenneth A. Parulski ,  Robert M. Guidash ,  Kevin E. Spaulding ,  Frank Razavi

IPC分类号： H04N5/228 ,  H04N5/232

CPC分类号： H04N5/23219 ,  G01S3/7864 ,  G06F3/012 ,  G06F3/016 ,  G06F3/017 ,  G06F3/0304 ,  G06F21/32 ,  G06F21/83 ,  H04N1/0035 ,  H04N1/00488 ,  H04N1/0049 ,  H04N1/00514 ,  H04N5/232 ,  H04N5/23216 ,  H04N5/23293 ,  H04N2101/00

摘要： A digital camera for capturing an image containing the photographer, comprising: an image sensor; an optical system for forming an image of a scene on the image sensor; a processor for processing the output of the image sensor in order to detect the presence of one or more faces in a field of view of the digital camera; a feedback mechanism for providing feedback to the photographer while the photographer is included within the field of view, responsive to detecting at least one face in the field of view, and a means for initiating capture of a digital image of the scene containing the photographer.

摘要翻译： 一种用于拍摄包含拍摄者的图像的数码相机，包括：图像传感器; 用于在图像传感器上形成场景的图像的光学系统; 用于处理图像传感器的输出以便检测数字照相机的视场中的一个或多个面部的存在的处理器; 反馈机构，用于响应于检测到视野中的至少一个脸部，以及用于发起对包含摄影者的场景的数字图像的捕获的装置，在摄影者被包括在视场内时向拍摄者提供反馈。

公开(公告)号：US07973836B2

公开(公告)日：2011-07-05

申请号：US10975865

申请日：2004-10-28

申请人： R. Daniel McGrath ,  Edward T. Nelson ,  Robert M. Guidash ,  Charles V. Stancampiano ,  James P. Lavine

发明人： R. Daniel McGrath ,  Edward T. Nelson ,  Robert M. Guidash ,  Charles V. Stancampiano ,  James P. Lavine

IPC分类号： H04N9/64 ,  H01L31/102

CPC分类号： H04N5/361 ,  H01L27/14601 ,  H01L27/14643

摘要： A method for lowering dark current in an image sensor pixel, the method includes the steps of providing a photosensitive area for receiving incident light which is converted into a charge; providing a gate for transferring charge from the photosensitive area; wherein the gate is held at a voltage which will accumulate majority carriers at a semiconductor-dielectric interface during integration for the photosensitive area. Alternatively, a potential profile can be provided under the gate to drain the dark current away from the photogeneration diffusion.

摘要翻译： 一种用于降低图像传感器像素中的暗电流的方法，所述方法包括以下步骤：提供用于接收转换成电荷的入射光的光敏区域; 提供用于从感光区域传送电荷的门; 其中所述栅极被保持在将在用于感光区域的集成期间在半导体 - 介电界面处将累积多数载流子的电压。 或者，可以在栅极下方提供电位分布以将暗电流排出远离光生扩散。

公开(公告)号：US06730897B2

公开(公告)日：2004-05-04

申请号：US09750745

申请日：2000-12-29

申请人： Robert M. Guidash

发明人： Robert M. Guidash

IPC分类号： H01L2700

CPC分类号： H04N5/37452 ,  H04N5/3559 ,  H04N5/374

摘要： A method and structure for a complementary metal oxide semiconductor active pixel sensor device having a photodetector, a sensing node electrically connected to the photodetector, an output connected to the photodetector, and a voltage-independent capacitance device connected between the sensing node and the output. The voltage-independent capacitance device provides a capacitance independently of a voltage on the sensing node. The voltage-independent capacitance device can be a voltage-independent capacitor, an electrode-electrode capacitor, or a common source amplifier and should have a capacitance larger than the capacitance of the sensing node. The voltage-independent capacitance device lowers an overall voltage-dependent capacitance of the APS.

摘要翻译： 一种互补金属氧化物半导体有源像素传感器装置的方法和结构，其具有光电检测器，电连接到光电检测器的感测节点，连接到光电检测器的输出端以及连接在感测节点和输出端之间的独立于电压的电容器件。 电压独立电容器件独立于感测节点上的电压提供电容。 电压独立电容器件可以是独立于电压的电容器，电极电极电容器或公共源极放大器，并且其电容应大于感测节点的电容。 独立于电压的电容器降低了APS的整体电压依赖性电容。

公开(公告)号：US06710804B1

公开(公告)日：2004-03-23

申请号：US09484156

申请日：2000-01-18

申请人： Robert M. Guidash

发明人： Robert M. Guidash

IPC分类号： H04N314

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H04N5/35527 ,  H04N5/3591

摘要： A semiconductor based X-Y addressable imager having an imaging array with a plurality of the pixels within the X-Y addressable imager, a photodetector within each of the plurality of pixels configured to sense a first bandwidth of light, a sense node within each of the pixels configured to sense a second bandwidth of light, a reset mechanism operatively configured to the photodetector and the sense node to allow resetting each of the photodetector and the sense node to a predetermined potential, the sense node being formed such that it does not have a light shield allowing the sense node to act as a second photodetector, and a transfer mechanism within each of plurality of pixels configured to transfer charge from the photodetector to the sense node. The X-Y addressable sensor in this embodiment can have either the first and second bandwidths being different, or the first and second bandwidths are the same. Another embodiment envisions the X-Y addressable imager is formed such that the bandwidth detected by the sense node and the photodetector is the same allowing for increased dynamic range of the photodetector.

摘要翻译： 一种基于半导体的XY可寻址成像器，其具有在XY可寻址成像器内具有多个像素的成像阵列，所述多个像素中的每一个内的光电检测器被配置为感测光的第一带宽，每个像素内的感测节点被配置为 感测光的第二带宽;复位机构，其可操作地配置为所述光电检测器和所述感测节点，以允许将所述光电检测器和所述感测节点中的每一个复位到预定电位，所述感测节点形成为不具有允许 用作第二光电检测器的感测节点，以及被配置为将电荷从光电检测器传递到感测节点的多个像素的每一个内的传送机构。 本实施例中的XY可寻址传感器可以具有不同的第一和第二带宽，或者第一和第二带宽是相同的。另一个实施例设想，XY可寻址成像器被形成为使得由感测节点和光电检测器检测到的带宽是 同样允许光电检测器的动态范围增加。

公开(公告)号：US06587146B1

公开(公告)日：2003-07-01

申请号：US09197364

申请日：1998-11-20

申请人： Robert M. Guidash

发明人： Robert M. Guidash

IPC分类号： H04N314

CPC分类号： H01L27/14603 ,  H01L27/14609

摘要： An active pixel sensor having a plurality of pixels with at least one pixel comprising: a photodetector operatively connected to a first electrical node; a pixel signal coupling capacitor having a first side connected to the first electrical node and a second side connected to a second electrical node; a reset transistor having a first source that is connected on the first electrical node and a second source that it connected to the second electrical node; a reset gate on the reset transistor connected to a reset control buss and a drain on the reset transistor connected to a voltage supply buss; an amplifier operatively connected to the second electrical node; and a select transistor operatively coupled to the amplifier. The preferred embodiment of the invention has a gate electrode layer formed over at least a portion of the photodetector and functions also as the gate of the transistor amplifier. It is envisioned by the preferred embodiment that the gate electrode layer be either polysilicon or indium tin oxide (ITO) which are materials typically used as gate electrode materials.

摘要翻译： 具有至少一个像素的多个像素的有源像素传感器包括：可操作地连接到第一电节点的光电检测器; 像素信号耦合电容器，其具有连接到第一电节点的第一侧和连接到第二电节点的第二侧; 复位晶体管，其具有连接在所述第一电节点上的第一源极和连接到所述第二电节点的第二源极; 连接到复位控制总线的复位晶体管上的复位栅极和连接到电压源总线的复位晶体管上的漏极; 可操作地连接到第二电节点的放大器; 以及可操作地耦合到放大器的选择晶体管。 本发明的优选实施例具有形成在光电检测器的至少一部分上的栅电极层，并且还用作晶体管放大器的栅极。 优选实施例设想，栅极电极层是通常用作栅电极材料的材料的多晶硅或氧化铟锡（ITO）。