公开(公告)号：US08106946B2

公开(公告)日：2012-01-31

申请号：US11821729

申请日：2007-06-25

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H04N7/18

CPC classification number: H04N5/33 ,  H04N17/002

Abstract: A circuitry testing method, comprising: providing a circuit board needing testing; applying a potential (160) to the circuit board needing testing so that the circuit board works and operating elements of the circuit board needing testing emit infrared rays; testing an intensity of radiation of the infrared rays using an infrared sensor (110); converting the radiation intensity to RGB (red, green, blue) data signals in order to form a diagnostic infrared image, using a processor (130); providing a standard infrared image; comparing the diagnostic infrared image with the standard infrared image; and determining whether the circuit board is defective according to the comparison.

Abstract translation: 一种电路测试方法，包括：提供需要测试的电路板; 将电位（160）施加到需要测试的电路板，使得电路板工作并且需要测试的电路板的操作元件发射红外线; 使用红外传感器（110）测试红外线的辐射强度; 使用处理器（130）将辐射强度转换为RGB（红，绿，蓝）数据信号以形成诊断红外图像; 提供标准的红外图像; 将诊断红外图像与标准红外图像进行比较; 并根据比较来确定电路板是否有缺陷。

公开(公告)号：US07847875B2

公开(公告)日：2010-12-07

申请号：US11784884

申请日：2007-04-09

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: G02F1/1333

CPC classification number: G02F1/136286

Abstract: An exemplary anti-interference wiring assembly for a liquid crystal display device includes a base substrate (210), gate lines (201) formed at the base substrate, anti-interference wires (230), and data lines (202). The anti-interference wires are provided between the gate lines and the data lines and are insulated from the gate lines and the data lines respectively. The anti-interference wires are configured for carrying signals having a reverse phase compared to signals carried by the corresponding gate lines.

Abstract translation: 用于液晶显示装置的示例性抗干扰布线组件包括基底（210），形成在基底基板上的栅极线（201），抗干扰线（230）和数据线（202）。 抗干扰线分别设置在栅极线与数据线之间，分别与栅极线和数据线绝缘。 抗干扰线被配置为携带具有相反相位的信号，与相应的栅极线所携带的信号相比较。

公开(公告)号：US07682951B2

公开(公告)日：2010-03-23

申请号：US11978328

申请日：2007-10-29

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H01L21/20

CPC classification number: B23K26/0732 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296

Abstract: An exemplary method for fabricating a polysilicon layer includes the following steps. A substrate (10) is provided and an amorphous silicon layer (12) is formed over the substrate. An excimer laser generator (13) for generating a pulse excimer laser beams collectively having the shape of a generally rectangular shaft is provided to melt a first area (15) of the amorphous silicon layer with the pulse excimer laser beams. The excimer laser generator is moved a distance to melt a second area of the amorphous layer spaced a short distance away from the first area. At least a subsequent third melted area spaced a short distance away from the second melted area is formed, with each subsequent melted area is spaced as short distance away from the immediately preceding melted area.

Abstract translation: 制造多晶硅层的示例性方法包括以下步骤。 提供衬底（10）并且在衬底上形成非晶硅层（12）。 用于产生共同具有大致矩形轴形状的脉冲准分子激光束的准分子激光发生器（13）被提供以用脉冲准分子激光束熔化非晶硅层的第一区域（15）。 将准分子激光发生器移动一段距离以熔化与第一区域隔开很短距离的非晶层的第二区域。 至少形成了与第二熔融区域隔开较短距离的随后的第三熔化区域，其后每个随后的熔融区域距离紧接在前的熔融区域间隔开短距离。

公开(公告)号：US20090085909A1

公开(公告)日：2009-04-02

申请号：US12286322

申请日：2008-09-29

Applicant: Chun-Ming Chen ,  Shuo-Ting Yan

Inventor： Chun-Ming Chen ,  Shuo-Ting Yan

IPC: G09G5/00

CPC classification number: G09G3/348 ,  G02B26/004

Abstract: An exemplary electro-wetting display (EWD) device (30) includes: a first substrate (31); a second substrate (38) parallel to the first substrate; partition walls (34) arranged in a lattice on the second substrate thereby defining a plurality of pixel regions (P); a first fluid (35); and a second fluid (36). The first and second fluids are immiscible with each other and disposed between the first and second substrates. The second fluid is electro-conductive or polar. The first fluid is provided between the second substrate and the second fluid. Each pixel region includes two switch elements (315, 316) and a storage capacitor (336). The switch elements and the storage capacitor are disposed at a same side of the pixel region.

Abstract translation: 示例性电润湿显示器（EWD）装置（30）包括：第一基板（31）; 与第一基板平行的第二基板（38）; 分隔壁（34），其布置在所述第二基板上的格子中，从而限定多个像素区域（P）; 第一流体（35）; 和第二流体（36）。 第一和第二流体彼此不混溶并且设置在第一和第二基底之间。 第二种流体是导电或极性的。 第一流体设置在第二基板和第二流体之间。 每个像素区域包括两个开关元件（315,316）和存储电容器（336）。 开关元件和存储电容器设置在像素区域的同一侧。

公开(公告)号：US20090080052A1

公开(公告)日：2009-03-26

申请号：US12284361

申请日：2008-09-22

Applicant: Sung-Yen Chen ,  Shuo-Ting Yan

Inventor： Sung-Yen Chen ,  Shuo-Ting Yan

IPC: G02F1/01

CPC classification number: G02B26/004

Abstract: An exemplary electro-wetting display (EWD) device includes a plurality of sub-pixel units. Each sub-pixel unit defines two opposite long sides and two opposite short sides. Each sub-pixel unit includes a first substrate, a second substrate facing toward the first substrate, a conductive first liquid and a polar second sandwiched between the first substrate and the second substrate, and an electrode. The first and second liquids are immiscible. The electrode is disposed at a surface of the second substrate facing the first liquid. The electrode defines an opening. A length of the opening as measured parallel to the nearest short side is not less than 0.8 times a length of the nearest short side.

Abstract translation: 示例性电润湿显示器（EWD）装置包括多个子像素单元。 每个子像素单元限定两个相对的长边和两个相对的短边。 每个子像素单元包括第一衬底，面对第一衬底的第二衬底，夹在第一衬底和第二衬底之间的导电第一液体和极性第二衬底以及电极。 第一和第二液体是不混溶的。 所述电极设置在所述第二基板的面向所述第一液体的表面。 电极限定开口。 平行于最近的短边测量的开口长度不小于最近短边长度的0.8倍。

公开(公告)号：US20080252834A1

公开(公告)日：2008-10-16

申请号：US12082801

申请日：2008-04-14

Applicant: Shuo-Ting Yan ,  Chao-Yi Hung

Inventor： Shuo-Ting Yan ,  Chao-Yi Hung

IPC: G02F1/1333 ,  H01L21/00 ,  H01L33/00

CPC classification number: H01L29/458 ,  G02F1/1368 ,  H01L29/66765

Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer covering the gate electrode and the substrate, an a-Si layer and a heavily doped a-Si layer on the gate insulating layer, a conductive film formed on the heavily doped a-Si layer, part of the a-Si layer, and the gate insulating layer, and a source electrode and a drain electrode on the conductive film. A work function of the conductive film is greater than a work function of the a-Si layer.

Abstract translation: 薄膜晶体管包括基板，形成在基板上的栅电极，覆盖栅极和基板的栅极绝缘层，栅极绝缘层上的a-Si层和重掺杂的a-Si层，导电膜 形成在重掺杂的a-Si层上，a-Si层的一部分和栅极绝缘层，以及在导电膜上的源电极和漏电极。 导电膜的功函数大于a-Si层的功函数。

公开(公告)号：US20080210166A1

公开(公告)日：2008-09-04

申请号：US12069805

申请日：2008-02-12

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: C23C16/505

CPC classification number: C23C16/5096 ,  C23C16/509

Abstract: An exemplary PECVD device includes a first electrode (21), a second electrode (22) parallel to the first electrode, and a radio frequency (RF) circuit (23) providing energy for the two electrodes. The first electrode includes at least two separated sub-electrodes (211, 212). The RF circuit includes an RF power supply source (230) and at least two variable resistors (231, 232). The RF power supply source is connected to the at least two sub-electrodes via the at least two variable resistors respectively. The PECVD device can deposit a uniform thin film.

Abstract translation: 示例性PECVD装置包括第一电极（21），平行于第一电极的第二电极（22）和为两个电极提供能量的射频（RF）电路（23）。 第一电极包括至少两个分离的子电极（211,212）。 RF电路包括RF电源（230）和至少两个可变电阻器（231,232）。 RF电源分别经由至少两个可变电阻器连接到至少两个子电极。 PECVD装置可以沉积均匀的薄膜。

公开(公告)号：US20080105871A1

公开(公告)日：2008-05-08

申请号：US11982869

申请日：2007-11-05

Applicant: Shuo-Ting Yan ,  Chien-Hsiung Chang ,  Yu-Hsiung Chang ,  Kai-Yuan Cheng ,  Tsau-Hua Hsieh ,  Chao-Yi Hung ,  Chao-Chih Lai

Inventor： Shuo-Ting Yan ,  Chien-Hsiung Chang ,  Yu-Hsiung Chang ,  Kai-Yuan Cheng ,  Tsau-Hua Hsieh ,  Chao-Yi Hung ,  Chao-Chih Lai

IPC: H01L29/167 ,  H01L21/84

CPC classification number: H01L29/78669 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78696 ,  H01L2029/7863

Abstract: An exemplary thin film transistor (TFT) array substrate (200) includes: a substrate (210), a gate electrode (220) disposed on the substrate, a gate insulating layer (230) disposed on the substrate having the gate electrode, a lightly doped amorphous silicon (a-Si) layer (241) disposed on the gate insulating layer, a first a-Si layer (242) disposed on the lightly doped a-Si layer, a source electrode (251) and a drain electrode (252) disposed on the gate insulating layer and the a-Si layer. The thin film transistor array substrate has a low leakage current.

Abstract translation: 示例性薄膜晶体管（TFT）阵列基板（200）包括：基板（210），设置在基板上的栅电极（220），设置在具有栅电极的基板上的栅极绝缘层（230） 设置在栅绝缘层上的掺杂非晶硅（a-Si）层（241），设置在轻掺杂a-Si层上的第一a-Si层（242），源电极（251）和漏电极 ）设置在栅极绝缘层和a-Si层上。 薄膜晶体管阵列基板具有低泄漏电流。

公开(公告)号：US20080074031A1

公开(公告)日：2008-03-27

申请号：US11903772

申请日：2007-09-24

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H01J63/04 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30403

Abstract: An exemplary field emission display includes a first substrate (21) and a second substrate (22) being at opposite sides of the field emission display, a metal layer (210) disposed on an inner surface of the first substrate, a transparent electrode (221) disposed on an inner surface of the second substrate and spaced apart from the metal layer, a fluorescent layer (223) disposed on the transparent electrode, and a poly-silicon layer (212) disposed on the metal layer. The poly-silicon layer defines a plurality of tips (218) pointing toward the fluorescent layer. A method for manufacturing a field emission display is also provided.

Abstract translation: 示例性场发射显示器包括位于场发射显示器的相对侧的第一衬底（21）和第二衬底（22），设置在第一衬底的内表面上的金属层（210），透明电极（221） ），设置在所述第二基板的内表面上并与所述金属层隔开，设置在所述透明电极上的荧光层（223）和设置在所述金属层上的多晶硅层（212）。 多晶硅层限定指向荧光层的多个尖端（218）。 还提供了一种用于制造场致发射显示器的方法。

公开(公告)号：US20070236620A1

公开(公告)日：2007-10-11

申请号：US11784884

申请日：2007-04-09

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: G02F1/1333 ,  G02F1/133

CPC classification number: G02F1/136286

Abstract: An exemplary anti-interference wiring assembly for a liquid crystal display device includes a base substrate (210), gate lines (201) formed at the base substrate, anti-interference wires (230), and data lines (202). The anti-interference wires are provided between the gate lines and the data lines and are insulated from the gate lines and the data lines respectively. The anti-interference wires are configured for carrying signals having a reverse phase compared to signals carried by the corresponding gate lines.

Abstract translation: 用于液晶显示装置的示例性抗干扰布线组件包括基底（210），形成在基底基板上的栅极线（201），抗干扰线（230）和数据线（202）。 抗干扰线分别设置在栅极线与数据线之间，分别与栅极线和数据线绝缘。 抗干扰线被配置为携带具有相反相位的信号，与相应的栅极线所携带的信号相比较。