MASK ABSORBER LAYERS FOR EXTREME ULTRAVIOLET LITHOGRAPHY

    公开(公告)号:US20240312783A1

    公开(公告)日:2024-09-19

    申请号:US18357297

    申请日:2023-07-24

    发明人: Daniel Staaks

    IPC分类号: H01L21/027

    CPC分类号: H01L21/027

    摘要: This disclosure provides systems, methods, and apparatus related to extreme ultraviolet lithography. In one aspect, a method of fabricating a mask for extreme ultraviolet lithography includes providing a structure, depositing an absorber layer over the reflective layer, and patterning the absorber layer. The structure includes a substrate and a reflective layer disposed over the substrate. The absorber layer comprises A and B. A is chromium (Cr) or vanadium (V). B is silver (Ag), indium (In), cobalt (Co), antimony (Sb), tin (Sn), or tellurium (Te). Patterning the absorber layer includes etching the absorber layer to remove the absorber layer in a first region while leaving the absorber layer in a second region. The etching is performed at a temperature of about −80° C. to 0° C.

    WAFER-SCALE-INTEGRATED SILICON-PHOTONICS-BASED OPTICAL SWITCHING SYSTEM AND METHOD OF FORMING

    公开(公告)号:US20240302598A1

    公开(公告)日:2024-09-12

    申请号:US18665950

    申请日:2024-05-16

    IPC分类号: G02B6/35 G02B6/12 G02B6/293

    摘要: A large-scale silicon-photonics-based optical switching system that occupies an area larger than the maximum area of a standard step-and-repeat lithography reticle is disclosed. The system includes a plurality of identical switch blocks, each of is formed in a different reticle field that no larger than the maximum reticle size. Bus waveguides of laterally adjacent switch blocks are stitched together at lateral interfaces that include a second arrangement of waveguide ports that is common to all lateral interfaces. Bus waveguides of vertically adjacent switch blocks are stitched together at vertical interfaces that include a first arrangement of waveguide ports that is common to all vertical interfaces. In some embodiments, the lateral and vertical interfaces include waveguide ports having waveguide coupling regions that are configured to mitigate optical loss due to stitching error.