REFRESH MANAGEMENT FOR DRAM
    41.
    发明申请

    公开(公告)号:US20210358540A1

    公开(公告)日:2021-11-18

    申请号:US16875281

    申请日:2020-05-15

    Abstract: A memory controller interfaces with a dynamic random access memory (DRAM) over a memory channel. A refresh control circuit monitors an activate counter which counts a rolling number of activate commands sent over the memory channel to a memory region of the DRAM. In response to the activate counter being above an intermediate management threshold value, the refresh control circuit only issue a refresh management (RFM) command if there is no REF command currently held at the refresh command circuit for the memory region.

    COMMAND REPLAY FOR NON-VOLATILE DUAL INLINE MEMORY MODULES

    公开(公告)号:US20210200468A1

    公开(公告)日:2021-07-01

    申请号:US16730092

    申请日:2019-12-30

    Abstract: Memory access commands are placed in a memory interface queue and transmitted from the memory interface queue to a heterogeneous memory channel coupled to a volatile dual in-line memory module (DIMM) and a non-volatile DIMM. Selected memory access commands that are placed in the memory interface queue are stored in a replay queue. The non-volatile reads that are placed in the memory interface queue are in a non-volatile command queue (NV queue). The method detects, based on information received over the heterogeneous memory channel, that an error has occurred requiring a recovery sequence. In response to the error, the method initiates the recovery sequence including (i) transmitting selected memory access commands that are stored in the replay queue, and (ii) transmitting non-volatile reads that are stored in the NV queue.

    Configuring dynamic random access memory refreshes for systems having multiple ranks of memory

    公开(公告)号:US10535393B1

    公开(公告)日:2020-01-14

    申请号:US16041778

    申请日:2018-07-21

    Abstract: An electronic device including a memory functional block having multiple ranks of memory and a memory controller functional block coupled to the memory. The memory controller includes refresh logic that detects, based on buffered memory accesses for each rank of memory of the ranks of memory, two or more ranks of memory for which a refresh is to be performed during a refresh interval. Based at least in part on one or more properties of buffered memory accesses for the two or more ranks of memory, the refresh logic determines a refresh order for performing refreshes for the two or more ranks of memory during the refresh interval. The memory controller then performs, in the refresh order, refreshes for the two or more ranks of memory during the refresh interval.

    COMMAND ARBITRATION FOR HIGH SPEED MEMORY INTERFACES

    公开(公告)号:US20180018291A1

    公开(公告)日:2018-01-18

    申请号:US15211815

    申请日:2016-07-15

    Abstract: In one form, a memory controller includes a command queue and an arbiter. The command queue receives and stores memory access requests. The arbiter includes a plurality of sub-arbiters for providing a corresponding plurality of sub-arbitration winners from among the memory access requests during a controller cycle, and for selecting among the plurality of sub-arbitration winners to provide a plurality of memory commands in a corresponding controller cycle. In another form, a data processing system includes a memory accessing agent for providing memory accesses requests, a memory system, and the memory controller coupled to the memory accessing agent and the memory system.

    MEMORY ENCRYPTION
    46.
    发明公开
    MEMORY ENCRYPTION 审中-公开

    公开(公告)号:US20230325326A1

    公开(公告)日:2023-10-12

    申请号:US17714596

    申请日:2022-04-06

    CPC classification number: G06F12/1408 G06F2212/1052 H04L9/0631

    Abstract: A memory controller includes encryption circuits for encrypting write data to be written to an address in a RAM memory. A tweak value is provided based at least on the address. The tweak value is encrypted with Advanced Encryption Standard (AES) encryption using a first key. A first block write data is encrypted by manipulating it based on the encrypted tweak value, AES encrypting with a second key, and then manipulating the result based on the encrypted tweak value again. For subsequent blocks of write data, the encrypted tweak value is modified, and a similar operation is performed.

    Signalling for heterogeneous memory systems

    公开(公告)号:US11748034B2

    公开(公告)日:2023-09-05

    申请号:US17409099

    申请日:2021-08-23

    CPC classification number: G06F3/0659 G06F3/0611 G06F3/0679

    Abstract: A memory controller selects from among a plurality of memory access commands including volatile memory reads, volatile memory writes, non-volatile memory reads, and non-volatile memory writes. The selected memory access commands are transmitted to a heterogenous memory channel coupled to a non-volatile memory and a volatile memory. The non-volatile read commands that are transmitted are stored in a non-volatile command queue (NV queue). A ready response is received from the non-volatile memory indicating that responsive data is available for an associated one of the non-volatile read commands. In response to receiving the ready response, a send command is transmitted for commanding the non-volatile memory to send the responsive data.

    ERROR RECOVERY FOR NON-VOLATILE MEMORY MODULES

    公开(公告)号:US20230125792A1

    公开(公告)日:2023-04-27

    申请号:US18084350

    申请日:2022-12-19

    Abstract: A memory controller includes a command queue, a memory interface queue, at least one storage queue, and a replay control circuit. The command queue has a first input for receiving memory access commands. The memory interface queue receives commands selected from the command queue and couples to a heterogeneous memory channel which is coupled to at least one non-volatile storage class memory (SCM) module. The at least one storage queue stores memory access commands that are placed in the memory interface queue. The replay control circuit detects that an error has occurred requiring a recovery sequence, and in response to the error, initiates the recovery sequence. In the recovery sequence, the replay control circuit transmits selected memory access commands from the at least one storage queue by grouping non-volatile read commands together separately from all pending volatile reads, volatile writes, and non-volatile writes.

    Adaptive page close prediction
    49.
    发明授权

    公开(公告)号:US11526278B2

    公开(公告)日:2022-12-13

    申请号:US15851414

    申请日:2017-12-21

    Abstract: Systems, apparatuses, and methods for performing efficient memory accesses for a computing system are disclosed. In various embodiments, a computing system includes one or more computing resources and a memory controller coupled to a memory device. The memory controller determines a memory access request targets a given bank of multiple banks. An access history is updated for the given bank based on whether the memory access request hits on an open page within the given bank and a page hit rate for the given bank is determined. The memory controller sets an idle cycle limit based on the page hit rate. The idle cycle limit is a maximum amount of time the given bank will be held open before closing the given bank while the bank is idle. The idle cycle limit is based at least in part on a page hit rate for the bank.

    WRITE BANK GROUP MASK DURING ARBITRATION

    公开(公告)号:US20220317923A1

    公开(公告)日:2022-10-06

    申请号:US17218676

    申请日:2021-03-31

    Abstract: A memory controller includes an arbiter for selecting memory requests from a command queue for transmission to a DRAM memory. The arbiter includes a bank group tracking circuit that tracks bank group numbers of three or more prior write requests selected by the arbiter. The arbiter also includes a selection circuit that selects requests to be issued from the command queue, and prevents selection of write requests and associated activate commands to the tracked bank group numbers unless no other write request is eligible in the command queue. The bank group tracking circuit indicates that a prior write request and associated activate commands are eligible to be issued after a number of clock cycles has passed corresponding to a minimum write-to-write timing period for the bank group of the prior write request.

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