公开(公告)号：US20230063199A1

公开(公告)日：2023-03-02

申请号：US17822686

申请日：2022-08-26

Applicant: ASM IP Holding, B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/44

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal-containing material on the substrate. The transition metal precursor according to the disclosure comprises a transition metal halide compound comprising an organic phosphine adduct ligand.

公开(公告)号：US11542600B2

公开(公告)日：2023-01-03

申请号：US17173467

申请日：2021-02-11

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/00 ,  C23C16/455 ,  C23C16/30 ,  H01L21/02 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US11527403B2

公开(公告)日：2022-12-13

申请号：US17113441

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Leo Salmi ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L21/762

Abstract: A method for filling a gap feature on a substrate surface is disclosed. The method may include: providing a substrate comprising a non-planar surface including one or more gap features; depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process; contacting the metal oxide with an organic ligand vapor; and converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features. Semiconductor structures including a metal-organic framework material formed by the methods of the disclosure are also disclosed.

公开(公告)号：US11492703B2

公开(公告)日：2022-11-08

申请号：US17254111

申请日：2019-06-21

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/08 ,  H01L39/12 ,  H01L43/10

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system tor forming the material are also disclosed.

公开(公告)号：US11047042B2

公开(公告)日：2021-06-29

申请号：US15569707

申请日：2016-05-24

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455 ,  G01N30/72 ,  C01G39/06

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20210005450A1

公开(公告)日：2021-01-07

申请号：US17028066

申请日：2020-09-22

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US20200083054A1

公开(公告)日：2020-03-12

申请号：US16674894

申请日：2019-11-05

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/18 ,  C23C16/04

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US10468262B2

公开(公告)日：2019-11-05

申请号：US16396475

申请日：2019-04-26

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/18 ,  H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US20190300468A1

公开(公告)日：2019-10-03

申请号：US16434834

申请日：2019-06-07

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C07C49/92 ,  C23C16/455 ,  C07C45/77 ,  C23C16/30

Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

公开(公告)号：US20190252196A1

公开(公告)日：2019-08-15

申请号：US16396475

申请日：2019-04-26

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L21/768 ,  C23C16/04

CPC classification number: H01L21/28556 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76873 ,  H01L21/76879

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.