摘要:
A voltage regulator for a regulated voltage generator configured to generate an operating voltage and including a variable comparison voltage generator, a comparison voltage, a partition branch including a plurality of active devices of a resistive type to receive the operating voltage and supply an intermediate voltage correlated to the operating voltage, and a comparator, to receive the comparison voltage and the intermediate voltage and supply a regulation signal for the regulated-voltage generator.
摘要:
A method writes data in a non-volatile memory comprising a main memory area comprising target locations, and an auxiliary memory area comprising auxiliary locations. The method comprises a write-erase cycle comprising: reading an initial set of data in a source location located in the main or auxiliary memory area; inserting the piece of data to be written into the initial set of data, to obtain an updated set of data, partially erasing a first group of auxiliary locations and a group of target locations designated by locations of a second group of auxiliary locations, and writing, in an erased auxiliary location of a third group of auxiliary locations, the updated set of data and the address of the target location. The method is particularly applicable to FLASH memories.
摘要:
Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, comprises a sense amplifier having a first sensing circuit portion connected to a cell to be read and provided with an output terminal for connection to a first input terminal of a comparator, and having a second reference circuit portion connected to a reference current generator and provided with an output terminal for connection to a second input terminal of said comparator, characterized in that said first and said second circuit portions comprise a series of first and second transistors, respectively, being connected between a first voltage reference and a second voltage reference and having respective points of interconnection connected to said output terminals of said first and second circuit portions.
摘要:
A regulator circuit for a charge pump voltage generator comprises a voltage comparator means for performing a voltage comparison between a charge pump output voltage and a reference voltage, and means responsive to the voltage comparator means for conditioning a charge pump clocking to the result of the voltage comparison. The voltage comparator means includes sampling means for sampling the charge pump output voltage at a sampling rate. Sampling rate control means are provided, responsive to the voltage comparison, for controlling the sampling rate according to the result of the voltage comparison.
摘要:
Bandgap type reference voltage source using an operational transimpedance amplifier. The bandgap stage is formed by a first and a second bandgap branch parallel-connected; the first bandgap branch comprises a first diode and a transistor, series-connected and forming a first output node; the second bandgap branch comprises a second diode and a second transistor series-connected and forming a second output node. The operational amplifier has inputs connected to the output nodes of the bandgap stage. An amplifier current detecting stage is connected to the outputs of the operational amplifier and supplies a current related to the current drawn by the operational amplifier. A diode current detecting stage is connected to the output of the amplifier current detecting stage and to an output of the operational amplifier and supplies a current related to the current flowing in the first diode. An output stage transforms this current into a stabilized voltage.
摘要:
An electronic device including a set of functional block, and a biasing block for generating a set of bias voltages for the functional blocks. The electronic device further includes a holding block coupled between the biasing block and the functional blocks for providing each bias voltage to at least one corresponding functional block, for each bias voltage the holding block including a capacitive element for storing the bias voltage, and a switch element switchable between an accumulation condition wherein provides the bias voltage from the biasing block to the capacitive element and to the at least one corresponding functional block, and a release condition wherein isolates the capacitive element from the biasing block and provides the bias voltage from the capacitive element to the at least one corresponding functional block, and a control block for alternately switching the switching elements between the accumulation condition and the release condition.
摘要:
Described herein is a method for biasing an EEPROM array formed by memory cells arranged in rows and columns, each operatively coupled to a first switch and to a second switch and having a first current-conduction terminal selectively connectable to a bitline through the first switch and a control terminal selectively connectable to a gate-control line through the second switch, wherein associated to each row are a first wordline and a second wordline, connected to the control terminals of the first switches and, respectively, of the second switches operatively coupled to the memory cells of the same row. The method envisages selecting at least one memory cell for a given memory operation, biasing the first wordline and the second wordline of the row associated thereto, and in particular biasing the first and second wordlines with voltages different from one another and having values that are higher than an internal supply voltage and are a function of the given memory operation.
摘要:
A memory architecture includes at least one matrix of memory cells of the EEPROM type organized in rows or word lines and columns or bit lines. Each memory cell includes a floating gate cell transistor and a selection transistor and is connected to a source line shared by the matrix. The memory cells are organized in words, all the memory cells belonging to a same word being driven by a byte switch, which is, in turn, connected to at least one control gate line. The memory cells further have accessible substrate terminals connected to a first additional line.
摘要:
A method writes data in a non-volatile memory comprising memory cells that are erased before being written. The method comprises the steps of providing a main non-volatile memory area comprising target pages, providing an auxiliary non-volatile memory area comprising auxiliary pages, providing a look-up table to associate to an address of invalid target page an address of valid auxiliary page, and, in response to a command for writing a piece of data in a target page writing the piece of data as well as the address of the target page in a first erased auxiliary page, invalidating the target page, and updating the look-up table.
摘要:
A power management unit for a non-volatile memory device is proposed. The power management unit includes means for providing a reference voltage, resistive means for deriving a reference current from the reference voltage, means for generating a plurality of operative voltages from a power supply voltage, and means for regulating the operative voltages; in the power management unit of the invention, for each operative voltage the means for regulating includes means for deriving a scaled reference current from the reference current according to a scaling factor, further resistive means for deriving a rating voltage from the scaled reference current, means for deriving a measuring voltage from the operative voltage and the rating voltage, and means for controlling the operative voltage according to a comparison between the measuring voltage and the reference voltage.