公开(公告)号：US09309598B2

公开(公告)日：2016-04-12

申请号：US14288696

申请日：2014-05-28

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

IPC: C03C15/00 ,  C23F1/12 ,  H01J37/32 ,  H01L21/3213

CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

Abstract translation: 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。

公开(公告)号：US20160032460A1

公开(公告)日：2016-02-04

申请号：US14793977

申请日：2015-07-08

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  C23F4/00 ,  C30B33/12

CPC classification number: C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法，其有助于最小化在多晶材料的晶界处的较高蚀刻速率。 某些方法涉及多晶材料的非晶化，其它方法涉及等离子体处理，而另一些方法涉及在蚀刻工艺中使用小剂量的卤化物转移剂。