公开(公告)号：US20100282556A1

公开(公告)日：2010-11-11

申请号：US12473472

申请日：2009-05-28

申请人： Tzu-Wei TSENG ,  Wei-Ming Huang

发明人： Tzu-Wei TSENG ,  Wei-Ming Huang

IPC分类号： A45C7/00

CPC分类号： A45C7/0077

摘要： A foldable travelling case includes a case body and two support plates. The case body has a bottom base and a top base with two opposite first side walls and two opposite second walls. The first and second side walls are connected with a periphery of the bottom base to respectively define a fold line with the bottom base. The support plates each have a bottom side pivotally connected with one of the first side walls such that each support plate is leanable against one of the first side walls so as to support the first side walls at an extended position. When the support plates are pivotally moved away from the first side walls, the first and second side walls can be folded along the fold lines and rested on the bottom base to reduce the volume of the travelling case.

摘要翻译： 折叠行走箱包括壳体和两个支撑板。 壳体具有底部基部和具有两个相对的第一侧壁和两个相对的第二壁的顶部基部。 第一和第二侧壁与底部底部的周边连接以分别限定与底部底部的折叠线。 支撑板各自具有与第一侧壁之一枢转地连接的底侧，使得每个支撑板可以抵靠第一侧壁中的一个倾斜，以便将第一侧壁支撑在延伸位置。 当支撑板枢转地移动离开第一侧壁时，第一和第二侧壁可以沿着折叠线折叠并且搁置在底部底部上以减小行驶箱的体积。

公开(公告)号：US20130010247A1

公开(公告)日：2013-01-10

申请号：US13300674

申请日：2011-11-21

申请人： Chuan-Sheng Wei ,  Ming-Tao Chiang ,  Yu-Ting Lin ,  Maw-Song Chen ,  Wei-Ming Huang

发明人： Chuan-Sheng Wei ,  Ming-Tao Chiang ,  Yu-Ting Lin ,  Maw-Song Chen ,  Wei-Ming Huang

IPC分类号： G02F1/1343 ,  H05B33/14 ,  G02B26/00 ,  H05K1/18

CPC分类号： H01L29/41733 ,  G02F1/13624 ,  H01L27/124

摘要： A pixel array including a pixel electrode and an active device is provided. The active device includes a gate, a channel layer, a source, a drain, a connection electrode, a first branch portion and a second branch portion. The gate is electrically connected with a scan line. The channel layer located at a side of the gate is electrically isolated from the gate. The source, the drain and the connection electrode are disposed on a part region of the channel layer. The first branch portion disposed on a part region of the channel layer is connected with an end of the connection electrode. The first branch portion surrounds the source located on the channel layer. The second branch portion disposed on a part region of the channel layer is connected with the other end of the connection electrode. The second branch portion surrounds the drain located on the channel layer.

摘要翻译： 提供了包括像素电极和有源器件的像素阵列。 有源器件包括栅极，沟道层，源极，漏极，连接电极，第一分支部分和第二分支部分。 栅极与扫描线电连接。 位于栅极侧的沟道层与栅极电绝缘。 源极，漏极和连接电极设置在沟道层的一部分区域上。 设置在沟道层的一部分区域上的第一分支部分与连接电极的一端连接。 第一分支部分围绕位于通道层上的源。 设置在沟道层的一部分区域上的第二分支部分与连接电极的另一端连接。 第二分支部分围绕位于通道层上的漏极。

公开(公告)号：US20120241743A1

公开(公告)日：2012-09-27

申请号：US13489458

申请日：2012-06-06

申请人： Guang-Ren Shen ,  Pei-Ming Chen ,  Chun-Hsiun Chen ,  Wei-Ming Huang

发明人： Guang-Ren Shen ,  Pei-Ming Chen ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC分类号： H01L29/786

CPC分类号： H01L29/786

摘要： A thin film transistor (TFT) and a fabricating method thereof are provided. The TFT includes a channel layer, an ohmic contact layer, a dielectric layer, a source, a drain, a gate, and a gate insulating layer. The channel layer has an upper surface and a sidewall. The ohmic contact layer is disposed on a portion of the upper surface of the channel layer. The dielectric layer is disposed on the sidewall of the channel layer, and does not overlap with the ohmic contact layer. The source and the drain are disposed on portions of the ohmic contact layer and the dielectric layer. A portion of dielectric layer is not covered by the source or the drain. The gate is above or below the channel layer. The gate insulating layer is disposed between the gate and the channel layer.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法。 TFT包括沟道层，欧姆接触层，电介质层，源极，漏极，栅极和栅极绝缘层。 沟道层具有上表面和侧壁。 欧姆接触层设置在沟道层的上表面的一部分上。 电介质层设置在沟道层的侧壁上，并且不与欧姆接触层重叠。 源极和漏极设置在欧姆接触层和电介质层的部分上。 电介质层的一部分不被源极或漏极覆盖。 门在通道层的上方或下方。 栅极绝缘层设置在栅极和沟道层之间。

公开(公告)号：US08232147B2

公开(公告)日：2012-07-31

申请号：US12779955

申请日：2010-05-14

申请人： Guang-Ren Shen ,  Pei-Ming Chen ,  Chun-Hsiun Chen ,  Wei-Ming Huang

发明人： Guang-Ren Shen ,  Pei-Ming Chen ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC分类号： H01L29/786

CPC分类号： H01L29/786

摘要： A thin film transistor (TFT) and a fabricating method thereof are provided. The TFT includes a channel layer, an ohmic contact layer, a dielectric layer, a source, a drain, a gate, and a gate insulating layer. The channel layer has an upper surface and a sidewall. The ohmic contact layer is disposed on a portion of the upper surface of the channel layer. The dielectric layer is disposed on the sidewall of the channel layer, and does not overlap with the ohmic contact layer. The source and the drain are disposed on portions of the ohmic contact layer and the dielectric layer. A portion of dielectric layer is not covered by the source or the drain. The gate is above or below the channel layer. The gate insulating layer is disposed between the gate and the channel layer.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法。 TFT包括沟道层，欧姆接触层，电介质层，源极，漏极，栅极和栅极绝缘层。 沟道层具有上表面和侧壁。 欧姆接触层设置在沟道层的上表面的一部分上。 电介质层设置在沟道层的侧壁上，并且不与欧姆接触层重叠。 源极和漏极设置在欧姆接触层和电介质层的部分上。 电介质层的一部分不被源极或漏极覆盖。 门在通道层的上方或下方。 栅极绝缘层设置在栅极和沟道层之间。

公开(公告)号：US08120838B2

公开(公告)日：2012-02-21

申请号：US12783170

申请日：2010-05-19

申请人： Hsiang-Lin Lin ,  Wei-Ming Huang ,  Chih-Jen Hu

发明人： Hsiang-Lin Lin ,  Wei-Ming Huang ,  Chih-Jen Hu

IPC分类号： G02B26/00 ,  G09G3/34

CPC分类号： G09G3/3446 ,  G02F1/167 ,  G02F2001/1676 ,  G09G2300/0434

摘要： The present invention in one aspect relates to a solar cell formed on a substrate, a bottom electrode member formed on the solar cell, an electrophoretic display panel formed on the bottom electrode member, having a plurality of electrophoretic cell structures spatially arranged in a matrix form, each electrophoretic cell structure containing a plurality of charged particles movable in the electrophoretic cell structure responsively to applied fields, and a top electrode member formed on the electrophoretic display panel, where at least one of the bottom electrode member and the top electrode member includes a plurality of in-plane switching (IPS) electrodes. Each IPS electrode is positioned in relation to a corresponding electrophoretic cell structure for controlling movements of the charged particles therein along a horizontal direction parallel to the electrophoretic display panel.

摘要翻译： 本发明一方面涉及形成在基板上的太阳能电池，形成在太阳能电池上的底部电极部件，形成在底部电极部件上的电泳显示面板，具有以矩阵形式空间排列的多个电泳单元结构体 每个电泳单元结构包含响应于施加场的可在电泳单元结构中移动的多个带电粒子，以及形成在电泳显示面板上的顶电极构件，其中底电极构件和顶电极构件中的至少一个包括 多个平面内切换（IPS）电极。 每个IPS电极相对于相应的电泳池结构定位，用于沿着平行于电泳显示面板的水平方向控制带电粒子在其中的移动。

公开(公告)号：US20110286076A1

公开(公告)日：2011-11-24

申请号：US12783170

申请日：2010-05-19

申请人： Hsiang-Lin Lin ,  Wei-Ming Huang ,  Chih-Jen Hu

发明人： Hsiang-Lin Lin ,  Wei-Ming Huang ,  Chih-Jen Hu

IPC分类号： G02F1/167

CPC分类号： G09G3/3446 ,  G02F1/167 ,  G02F2001/1676 ,  G09G2300/0434

摘要： The present invention in one aspect relates to a solar cell formed on a substrate, a bottom electrode member formed on the solar cell, an electrophoretic display panel formed on the bottom electrode member, having a plurality of electrophoretic cell structures spatially arranged in a matrix form, each electrophoretic cell structure containing a plurality of charged particles movable in the electrophoretic cell structure responsively to applied fields, and a top electrode member formed on the electrophoretic display panel, where at least one of the bottom electrode member and the top electrode member includes a plurality of in-plane switching (IPS) electrodes. Each IPS electrode is positioned in relation to a corresponding electrophoretic cell structure for controlling movements of the charged particles therein along a horizontal direction parallel to the electrophoretic display panel.

摘要翻译： 本发明一方面涉及形成在基板上的太阳能电池，形成在太阳能电池上的底部电极部件，形成在底部电极部件上的电泳显示面板，具有以矩阵形式空间排列的多个电泳单元结构体 每个电泳单元结构包含响应于施加场的可在电泳单元结构中移动的多个带电粒子，以及形成在电泳显示面板上的顶电极构件，其中底电极构件和顶电极构件中的至少一个包括 多个平面内切换（IPS）电极。 每个IPS电极相对于相应的电泳池结构定位，用于沿着平行于电泳显示面板的水平方向控制带电粒子在其中的移动。

公开(公告)号：US20110216256A1

公开(公告)日：2011-09-08

申请号：US12781805

申请日：2010-05-17

申请人： Hsiang-Lin Lin ,  An-Thung Cho ,  Chih-Jen Hu ,  Wei-Ming Huang

发明人： Hsiang-Lin Lin ,  An-Thung Cho ,  Chih-Jen Hu ,  Wei-Ming Huang

IPC分类号： G02F1/135 ,  H01J9/24

CPC分类号： G02F1/135 ,  H01J9/24

摘要： A reflective type touch-sensing display panel including a front substrate, scan lines, data lines, pixel structures, photo-sensors, readout devices, a rear substrate and a reflective display medium is provided. The front substrate has an inner surface. The scan lines and the data lines are on the inner surface of the front substrate and intersected to each other. The pixel structures are disposed on the inner surface of the front substrate, and each pixel structure is electrically connected to one of the scan lines and one of the data lines correspondingly. The photo-sensors are disposed on the inner surface of the front substrate. Each readout device is electrically connected to one of the photo-sensor correspondingly. The rear substrate is disposed opposite to the front substrate. The reflective display medium is sealed between the front substrate and the rear substrate.

摘要翻译： 提供了包括前基板，扫描线，数据线，像素结构，光传感器，读出装置，后基板和反射显示介质的反射型触摸感测显示面板。 前基板具有内表面。 扫描线和数据线位于前基板的内表面上并彼此相交。 像素结构设置在前基板的内表面上，并且每个像素结构相应地电连接到扫描线之一和数据线之一。 光传感器设置在前基板的内表面上。 每个读出装置相应地电连接到一个光电传感器。 后基板与前基板相对设置。 反射显示介质被密封在前基板和后基板之间。

公开(公告)号：US20100270551A1

公开(公告)日：2010-10-28

申请号：US12500609

申请日：2009-07-10

申请人： Chuan-Sheng Wei ,  Guang-Ren Shen ,  Chang-Yu Huang ,  Pei-Ming Chen ,  Sheng-Chao Liu ,  Chun-Hsiun Chen ,  Wei-Ming Huang

发明人： Chuan-Sheng Wei ,  Guang-Ren Shen ,  Chang-Yu Huang ,  Pei-Ming Chen ,  Sheng-Chao Liu ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L29/42384 ,  H01L29/41733 ,  H01L29/66765

摘要： A bottom gate thin film transistor and an active array substrate are provided. The bottom gate thin film transistor includes a gate, a gate insulation layer, a semiconductor layer, a plurality of sources and a plurality of drains. The gate insulation layer is disposed on the gate. The semiconductor layer is disposed on the gate insulation layer and located above the gate. An area ratio of the semiconductor layer and the gate is about 0.001 to 0.9. The sources are electrically connected with each other, and the drains are electrically connected with each other.

摘要翻译： 提供底栅薄膜晶体管和有源阵列基板。 底栅薄膜晶体管包括栅极，栅极绝缘层，半导体层，多个源极和多个漏极。 栅极绝缘层设置在栅极上。 半导体层设置在栅极绝缘层上并位于栅极上方。 半导体层和栅极的面积比约为0.001〜0.9。 源极彼此电连接，并且漏极彼此电连接。

公开(公告)号：US08907923B2

公开(公告)日：2014-12-09

申请号：US12718998

申请日：2010-03-07

申请人： An-Thung Cho ,  Chia-Tien Peng ,  Hung-Wei Tseng ,  Cheng-Chiu Pai ,  Yu-Hsuan Li ,  Chun-Hsiun Chen ,  Wei-Ming Huang

发明人： An-Thung Cho ,  Chia-Tien Peng ,  Hung-Wei Tseng ,  Cheng-Chiu Pai ,  Yu-Hsuan Li ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC分类号： G06F3/042 ,  H01L27/146 ,  G06F3/041

CPC分类号： G06F3/0421 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  G06F2203/04109 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/028 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/202

摘要： The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass.

摘要翻译： 本发明提供一种光传感器，形成光传感器的方法和相关的光学触摸装置。 光传感器包括第一电极，第二电极，第一富硅介电层和第二富硅介电层。 第一富硅介电层设置在用于感测红外线的第一电极和第二电极之间，并且第二富硅电介质层设置在第一富硅电介质层和第二电极之间，用于感测可见光束。 包括第一富硅介电层和第二富硅介电层的多层结构使得单个光传感器能够有效地检测红外线和可见光束。 此外，单个光传感器容易地集成到光学触摸装置中，以形成集成在玻璃上的光学触摸面板。

公开(公告)号：US08772075B2

公开(公告)日：2014-07-08

申请号：US12717938

申请日：2010-03-04

申请人： An-Thung Cho ,  Jung-Yen Huang ,  Chia-Tien Peng ,  Chun-Hsiun Chen ,  Wei-Ming Huang

发明人： An-Thung Cho ,  Jung-Yen Huang ,  Chia-Tien Peng ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC分类号： H01L21/00

CPC分类号： G06F3/0412 ,  G06F3/042 ,  G06F2203/04108 ,  H01L27/323

摘要： A display region and a light sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the light sensing region is formed by the same processes with the drive thin film transistor of the display region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed.

摘要翻译： 在本发明的OLED触摸面板的每个像素区域中限定显示区域和感光区域。 光检测区域的读出薄膜晶体管通过与显示区域的驱动薄膜晶体管相同的处理形成。 光学传感器的顶部和底部电极通过与OLED的顶部和底部电极相同的工艺形成。 因此，本发明可以仅添加形成图案化的感测电介质层的步骤，以形成OLED面板以将光学传感器集成到OLED面板的像素区域中的过程。 因此，形成OLED触摸面板。