Titanium silicide nitride emitters and method
    41.
    发明授权
    Titanium silicide nitride emitters and method 失效
    钛硅化物氮化物发射体及方法

    公开(公告)号:US06323587B1

    公开(公告)日:2001-11-27

    申请号:US09130634

    申请日:1998-08-06

    IPC分类号: H01J130

    摘要: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.

    摘要翻译: 场致发射显示装置包括形成在基板上的多个发射体。 每个发射器包括硅化钛氮化物外层,使得发射体不易劣化。 在基板和发射体上形成电介质层,并且在围绕每个发射体的电介质层中形成开口。 导电提取栅格基本上在由发射器限定的平面中形成在介质层上,并且包括围绕每个发射器的开口。 具有平坦表面的阴极发光面板平行于基板设置。

    Field emission display having reduced optical sensitivity and method
    42.
    发明授权
    Field emission display having reduced optical sensitivity and method 失效
    具有降低的光学灵敏度和方法的场发射显示

    公开(公告)号:US06271632B1

    公开(公告)日:2001-08-07

    申请号:US09621948

    申请日:2000-07-24

    IPC分类号: H01J130

    CPC分类号: H01J3/022

    摘要: An emitter substructure and methods for manufacturing the substructure are described. A substrate has a p-region formed at a surface of the substrate. A n-tank is formed such that the p-region surrounds a periphery of the n-tank. An emitter is formed on and electrically coupled to the n-tank. A dielectric layer is formed on the substrate that includes an opening surrounding the emitter. An extraction grid is formed on the dielectric layer. The extraction grid includes an opening surrounding and in close proximity to a tip of the emitter. An insulating region is formed at a lower boundary of the n-tank. The insulating region electrically isolates the emitter and the n-tank along at least a portion of the lower boundary beneath the opening. The insulating region thus functions to displace a depletion region associated with a boundary between the p-region and the n-tank from an area that can be illuminated by photons traveling through the extraction grid or openings in the extraction grid. This reduces distortion in field emission displays.

    摘要翻译: 描述了一种发射器子结构及其制造方法。 衬底具有形成在衬底的表面上的p区。 形成n型罐,使得p型区域围绕n型罐的周边。 发射极形成在n电池上并电耦合到n型电池。 在基板上形成介电层,该介质层包括围绕发射极的开口。 在电介质层上形成提取栅格。 提取格栅包括围绕并且紧邻发射器的尖端的开口。 在n型罐的下边界处形成绝缘区域。 绝缘区域沿着开口下方的下边界的至少一部分电隔离发射极和n坦克。 因此,绝缘区域用于从可以由穿过提取栅格中的光子或提取栅格中的开口的光子照射的区域移位与p区域和n坦克之间的边界相关联的耗尽区域。 这减少了场致发射显示器的失真。

    Double field oxide in field emission display and method
    43.
    发明授权
    Double field oxide in field emission display and method 失效
    双场氧化物场发射显示及方法

    公开(公告)号:US06028322A

    公开(公告)日:2000-02-22

    申请号:US120988

    申请日:1998-07-22

    申请人: Behnam Moradi

    发明人: Behnam Moradi

    摘要: A field emission display includes a substrate, a plurality of emitters formed on the substrate, a semiconductor device formed in or on the substrate for controlling the flow of electrons to the emitters and a dielectric layer formed on the substrate. An extraction grid is formed on the dielectric layer substantially in a plane of tips of the plurality of emitters and includes openings each surrounding one of the emitters. The display also includes a transparent viewing screen, a transparent conductor formed on the viewing screen and a cathodoluminescent layer formed on the transparent conductor. The semiconductor device includes a gate dielectric and a field oxide. Significantly, the field oxide includes an interfacial region acting as a trapping and recombination site for mobile charge carriers. As a result, the semiconductor device is more robust and is better able to resist parameter shifts or performance degradation due to exposure to X-rays and photons that are incidentally generated along with the desired images on the display. This results in a more robust field emission display.

    摘要翻译: 场发射显示器包括衬底,形成在衬底上的多个发射体,形成在衬底中或衬底上的半导体器件,用于控制向发射体的电子流和形成在衬底上的电介质层。 提取栅格基本上在多个发射器的尖端的平面上形成在电介质层上,并且包括围绕发射器之一的开口。 显示器还包括透明观察屏幕,形成在观察屏幕上的透明导体和形成在透明导体上的阴极发光层。 半导体器件包括栅极电介质和场氧化物。 重要的是,场氧化物包括用作移动电荷载体的捕获和重组位点的界面区域。 结果,半导体器件更坚固,并且能够更好地抵抗由于暴露于与显示器上的所需图像并行地产生的X射线和光子的参数偏移或性能劣化。 这导致更强劲的场致发射显示。