公开(公告)号：US08199569B2

公开(公告)日：2012-06-12

申请号：US13087517

申请日：2011-04-15

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

公开(公告)号：US20120127787A1

公开(公告)日：2012-05-24

申请号：US13349044

申请日：2012-01-12

申请人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

发明人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

IPC分类号： G11C11/16

CPC分类号： G11C11/1673 ,  G11C11/1693

摘要： A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

摘要翻译： 自参考读取自旋传递扭矩存储单元的方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 磁性隧道结数据单元具有第一电阻状态。 然后，该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流。 第一个读取电流小于第二个读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

公开(公告)号：US20120106241A1

公开(公告)日：2012-05-03

申请号：US13349052

申请日：2012-01-12

申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

IPC分类号： G11C11/02

CPC分类号： G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

摘要： A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压，所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

公开(公告)号：US08169810B2

公开(公告)日：2012-05-01

申请号：US12497953

申请日：2009-07-06

申请人： Wenzhong Zhu ,  Xiaohua Lou ,  Dimitar V. Dimitrov

发明人： Wenzhong Zhu ,  Xiaohua Lou ,  Dimitar V. Dimitrov

IPC分类号： G11C11/22

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A magnetic tunnel junction cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state.

摘要翻译： 磁性隧道结电池包括铁磁参考层，铁磁自由层和将铁磁参考层与铁磁性自由层分离的非磁性阻挡层。 磁性隧道结电池具有用于在高电阻数据状态和低电阻数据状态之间切换的不对称能量势垒。

公开(公告)号：US08091209B1

公开(公告)日：2012-01-10

申请号：US11866769

申请日：2007-10-03

申请人： Zheng Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Zheng Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. The first magnetic portion and/or the second magnetic portion comprises a multilayer structure including a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor exhibits a magnetoresistive ratio of at least about 62% with a resistance-area (RA) product of about 0.45 Ω·μm2.

摘要翻译： 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和/或第二磁性部分包括多层结构，其包括具有与阻挡层相邻的正磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层。 磁传感器表现出至少约62％的阻磁比，电阻面积（RA）乘积约0.45＆OHgr·μm2。

公开(公告)号：US20110242883A1

公开(公告)日：2011-10-06

申请号：US13160969

申请日：2011-06-15

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

IPC分类号： G11C11/15

CPC分类号： G11C11/15 ,  G11C11/1675 ,  G11C11/5607

摘要： Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

摘要翻译： 描述写入多位MRAM存储器单元的方法。 该方法包括对多位（即多级）热辅助MRAM进行自检测写入。 自检的写入会增加数据状态级之间的读取余量，并降低由于单元格电阻变化而导致的读取边缘变化。

公开(公告)号：US20110205788A1

公开(公告)日：2011-08-25

申请号：US13100953

申请日：2011-05-04

申请人： Daniel Seymour Reed ,  Yong Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

发明人： Daniel Seymour Reed ,  Yong Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

IPC分类号： G11C11/15

CPC分类号： H01F10/329 ,  B82Y25/00 ,  G01R33/098 ,  G01R33/1284 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。

公开(公告)号：US20110194334A1

公开(公告)日：2011-08-11

申请号：US13087517

申请日：2011-04-15

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

IPC分类号： G11C11/36

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

公开(公告)号：US20110121418A1

公开(公告)日：2011-05-26

申请号：US13015320

申请日：2011-01-27

申请人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1675 ,  Y10T428/1114 ,  Y10T428/1121

摘要： A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.

摘要翻译： MRAM单元的自由铁磁数据存储层耦合到自由铁磁稳定层，该稳定层在一侧直接电耦合到接触电极，并在相对侧与自由铁磁数据存储层分离 ，通过间隔层。 间隔层提供两个自由层之间的耦合，该耦合是以下之一：铁磁耦合和反铁磁耦合。

公开(公告)号：US07940592B2

公开(公告)日：2011-05-10

申请号：US12326314

申请日：2008-12-02

申请人： Daniel Seymour Reed ,  Yon Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

发明人： Daniel Seymour Reed ,  Yon Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

IPC分类号： G11C7/00

CPC分类号： H01F10/329 ,  B82Y25/00 ,  G01R33/098 ,  G01R33/1284 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。