SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD
    1.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD 有权
    旋转转矩记忆自参考读取方法

    公开(公告)号:US20120106241A1

    公开(公告)日:2012-05-03

    申请号:US13349052

    申请日:2012-01-12

    IPC分类号: G11C11/02

    摘要: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括:通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压,所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流,形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较,以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Spin-transfer torque memory self-reference read method
    2.
    发明授权
    Spin-transfer torque memory self-reference read method 有权
    自旋转矩存储器自参考读取方式

    公开(公告)号:US08116122B2

    公开(公告)日:2012-02-14

    申请号:US12147723

    申请日:2008-06-27

    IPC分类号: G11C11/00

    摘要: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括:通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压,所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流,形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较,以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Spin-transfer torque memory self-reference read method
    3.
    发明授权
    Spin-transfer torque memory self-reference read method 有权
    自旋转矩存储器自参考读取方式

    公开(公告)号:US08411495B2

    公开(公告)日:2013-04-02

    申请号:US13349052

    申请日:2012-01-12

    IPC分类号: G11C11/00

    摘要: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括:通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压,所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流,形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较,以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD
    4.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD 有权
    旋转转矩记忆自参考读取方法

    公开(公告)号:US20090323402A1

    公开(公告)日:2009-12-31

    申请号:US12147723

    申请日:2008-06-27

    IPC分类号: G11C11/00 G11C7/00

    摘要: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括:通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压,所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流,形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较,以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Spin-transfer torque memory non-destructive self-reference read method
    5.
    发明授权
    Spin-transfer torque memory non-destructive self-reference read method 有权
    旋转转矩记忆无损自参考读取方法

    公开(公告)号:US08416614B2

    公开(公告)日:2013-04-09

    申请号:US13349044

    申请日:2012-01-12

    IPC分类号: G11C11/00

    CPC分类号: G11C11/1673 G11C11/1693

    摘要: A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译: 自参考读取自旋传递扭矩存储单元的方法包括:通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 磁性隧道结数据单元具有第一电阻状态。 然后,该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流。 第一个读取电流小于第二个读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较,以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells
    7.
    发明申请
    Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells 有权
    非易失性记忆体的预测热预处理和时序控制

    公开(公告)号:US20120147665A1

    公开(公告)日:2012-06-14

    申请号:US13400515

    申请日:2012-02-20

    IPC分类号: G11C11/16 G11C7/00

    CPC分类号: G11C11/1675 G11C11/1659

    摘要: Method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell. In accordance with some embodiments, a semiconductor memory has an array of non-volatile memory cells, and a control circuit which stores a first write command from a host to write data to said array. A write circuit flows a write current through an unconditioned first selected cell having a first block address associated with the first write command to write the first selected cell to a selected data state, and concurrently passes a thermal preconditioning current through a second selected cell having a second block address associated with the first block address. The write circuit further passes a thermal preconditioning current through a third selected cell having a third block address associated with the second block address in response to receipt by the control circuit of a second write command from the host associated with the second block address.

    摘要翻译: 使用热预处理将数据写入非易失性存储单元的方法和装置。 根据一些实施例,半导体存储器具有非易失性存储器单元的阵列,以及存储来自主机的第一写命令以将数据写入所述阵列的控制电路。 写入电路通过具有与第一写入命令相关联的第一块地址的无条件的第一选定单元流动写入电流,以将第一选定单元写入所选择的数据状态,并且同时通过热预处理电流通过具有 与第一块地址相关联的第二块地址。 响应于控制电路接收到与第二块地址相关联的主机的第二写入命令,写入电路进一步传递热预处理电流通过具有与第二块地址相关联的第三块地址的第三选定单元。

    SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD
    8.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD 有权
    转子转子记忆体非破坏性自参考读取方法

    公开(公告)号:US20120127787A1

    公开(公告)日:2012-05-24

    申请号:US13349044

    申请日:2012-01-12

    IPC分类号: G11C11/16

    CPC分类号: G11C11/1673 G11C11/1693

    摘要: A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译: 自参考读取自旋传递扭矩存储单元的方法包括:通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 磁性隧道结数据单元具有第一电阻状态。 然后,该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流。 第一个读取电流小于第二个读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较,以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Variable write and read methods for resistive random access memory
    10.
    发明授权
    Variable write and read methods for resistive random access memory 失效
    电阻随机存取存储器的可变写和读方法

    公开(公告)号:US08054675B2

    公开(公告)日:2011-11-08

    申请号:US13028246

    申请日:2011-02-16

    IPC分类号: G11C11/00 G11C11/14 G11C11/15

    摘要: Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

    摘要翻译: 公开了用于电阻随机存取存储器(RRAM)的可变写和读方法。 这些方法包括初始化写入序列并验证RRAM单元的电阻状态。 如果需要写入脉冲,则通过RRAM单元施加两个或更多写入脉冲,以将期望的数据状态写入RRAM单元。 每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。 随后的写入脉冲被施加到RRAM单元,直到RRAM单元处于期望的数据状态,或直到预定数量的写入脉冲已经被施加到RRAM单元为止。 还公开了一种读取方法,其中随后的读取脉冲通过RRAM单元被施加,直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。