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1.发明授权Spin-torque bit cell with unpinned reference layer and unidirectional write current 有权具有未固定参考层和单向写入电流的自旋转矩位单元公开(公告)号：US07940592B2
公开(公告)日：2011-05-10
申请号：US12326314
申请日：2008-12-02
IPC分类号： G11C7/00
CPC分类号： H01F10/329 , B82Y25/00 , G01R33/098 , G01R33/1284 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254
摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.
摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。
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2.发明申请Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirectional Write Current 有权具有未引脚参考层和单向写入电流的自旋转矩位单元公开(公告)号：US20110205788A1
公开(公告)日：2011-08-25
申请号：US13100953
申请日：2011-05-04
IPC分类号： G11C11/15
CPC分类号： H01F10/329 , B82Y25/00 , G01R33/098 , G01R33/1284 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254
摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.
摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。
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3.发明授权Spin-torque bit cell with unpinned reference layer and unidirectional write current 有权具有未固定参考层和单向写入电流的自旋转矩位单元公开(公告)号：US08098538B2
公开(公告)日：2012-01-17
申请号：US13100953
申请日：2011-05-04
IPC分类号： G11C7/00
CPC分类号： H01F10/329 , B82Y25/00 , G01R33/098 , G01R33/1284 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254
摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.
摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。
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4.发明申请Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirectional Write Current 有权具有未引脚参考层和单向写入电流的自旋转矩位单元公开(公告)号：US20100135072A1
公开(公告)日：2010-06-03
申请号：US12326314
申请日：2008-12-02
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： H01F10/329 , B82Y25/00 , G01R33/098 , G01R33/1284 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254
摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.
摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。
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公开(公告)号：US20090262638A1
公开(公告)日：2009-10-22
申请号：US12106382
申请日：2008-04-21
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： G11B9/00
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译： 具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。 存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。 换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。 这些元素具有单向写入方案。
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公开(公告)号：US08102691B2
公开(公告)日：2012-01-24
申请号：US12144705
申请日：2008-06-24
申请人： Haiwen Xi , Xiaobin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Harry Liu , Song S. Xue , Andreas Roelofs , Markus Siegert
发明人： Haiwen Xi , Xiaobin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Harry Liu , Song S. Xue , Andreas Roelofs , Markus Siegert
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/14 , Y10S977/933
摘要： Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.
摘要翻译： 磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。 提供了稳定域壁的畴壁节点或锚的各种实施例。 在一些实施例中，壁锚是与磁迹分离的元件。 在其他实施例中，壁锚是磁轨的物理构型的扰动。 在另外的其它实施例中，壁锚是磁迹材料中的干扰。
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公开(公告)号：US08218356B2
公开(公告)日：2012-07-10
申请号：US12795020
申请日：2010-06-07
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译： 具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。 存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。 换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。 这些元素具有单向写入方案。
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公开(公告)号：US20100246245A1
公开(公告)日：2010-09-30
申请号：US12795020
申请日：2010-06-07
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译： 具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。 存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。 换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。 这些元素具有单向写入方案。
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公开(公告)号：US20090316462A1
公开(公告)日：2009-12-24
申请号：US12144705
申请日：2008-06-24
申请人： Haiwen Xi , Xiaobin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Harry Liu , Song S. Xue , Andreas Roelofs , Markus Siegert
发明人： Haiwen Xi , Xiaobin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Harry Liu , Song S. Xue , Andreas Roelofs , Markus Siegert
IPC分类号： G11C19/08
CPC分类号： G11C19/0808 , G11C11/14 , Y10S977/933
摘要： Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.
摘要翻译： 磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。 提供了稳定域壁的畴壁节点或锚的各种实施例。 在一些实施例中，壁锚是与磁迹分离的元件。 在其他实施例中，壁锚是磁轨的物理构型的扰动。 在另外的其它实施例中，壁锚是磁迹材料中的干扰。
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公开(公告)号：US08659939B2
公开(公告)日：2014-02-25
申请号：US13530460
申请日：2012-06-22
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译： 具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。 存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。 换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。 这些元素具有单向写入方案。
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