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    Spin-transfer torque memory non-destructive self-reference read method
    1.
    发明授权
    Spin-transfer torque memory non-destructive self-reference read method 有权
    旋转转矩记忆无损自参考读取方法

    公开(公告)号：US08416614B2

    公开(公告)日：2013-04-09

    申请号：US13349044

    申请日：2012-01-12

    申请人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

    发明人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1673 ,  G11C11/1693

    摘要： A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 自参考读取自旋传递扭矩存储单元的方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 磁性隧道结数据单元具有第一电阻状态。 然后，该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流。 第一个读取电流小于第二个读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD
    2.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD 有权
    转子转子记忆体非破坏性自参考读取方法

    公开(公告)号：US20120127787A1

    公开(公告)日：2012-05-24

    申请号：US13349044

    申请日：2012-01-12

    申请人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

    发明人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1673 ,  G11C11/1693

    摘要： A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 自参考读取自旋传递扭矩存储单元的方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 磁性隧道结数据单元具有第一电阻状态。 然后，该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流。 第一个读取电流小于第二个读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Spin-transfer torque memory non-destructive self-reference read method
    3.
    发明授权
    Spin-transfer torque memory non-destructive self-reference read method 有权
    旋转转矩记忆无损自参考读取方法

    公开(公告)号：US08116123B2

    公开(公告)日：2012-02-14

    申请号：US12147727

    申请日：2008-06-27

    申请人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

    发明人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1673 ,  G11C11/1693

    摘要： A spin-transfer torque memory apparatus and non-destructive self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage in a first voltage storage device. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state and forming a second bit line read voltage and storing the second bit line read voltage in a second voltage storage device. The first read current is less than the second read current. Then the stored first bit line read voltage is compared with the stored second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 描述了自旋转移力矩存储装置和非破坏性自参考读取方案。 读取自旋转移力矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压，并将第一位线读取电压存储在第一电压存储装置中。 磁性隧道结数据单元具有第一电阻状态。 然后，该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流并形成第二位线读取电压，并将第二位线读取电压存储在第二电压存储器件中。 第一个读取电流小于第二个读取电流。 然后将存储的第一位线读取电压与存储的第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD
    4.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD 有权
    转子转子记忆体非破坏性自参考读取方法

    公开(公告)号：US20090323403A1

    公开(公告)日：2009-12-31

    申请号：US12147727

    申请日：2008-06-27

    申请人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

    发明人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Ran Wang ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C11/1673 ,  G11C11/1693

    摘要： A spin-transfer torque memory apparatus and non-destructive self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage in a first voltage storage device. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state and forming a second bit line read voltage and storing the second bit line read voltage in a second voltage storage device. The first read current is less than the second read current. Then the stored first bit line read voltage is compared with the stored second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 描述了自旋转移力矩存储装置和非破坏性自参考读取方案。 读取自旋转移力矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并将第一位线读取电压存储在第一电压存储装置中。 磁性隧道结数据单元具有第一电阻状态。 然后，该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流并形成第二位线读取电压，并将第二位线读取电压存储在第二电压存储器件中。 第一个读取电流小于第二个读取电流。 然后将存储的第一位线读取电压与存储的第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Spin-transfer torque memory self-reference read method
    7.
    发明授权
    Spin-transfer torque memory self-reference read method 有权
    自旋转矩存储器自参考读取方式

    公开(公告)号：US08116122B2

    公开(公告)日：2012-02-14

    申请号：US12147723

    申请日：2008-06-27

    申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

    摘要： A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋传递转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压，所述磁性隧道结数据单元具有第一电阻状态并存储 第一电压存储装置中的第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 第二位线读取电压被存储在第二电压存储装置中。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Variable write and read methods for resistive random access memory
    8.
    发明授权
    Variable write and read methods for resistive random access memory 失效
    电阻随机存取存储器的可变写和读方法

    公开(公告)号：US08054675B2

    公开(公告)日：2011-11-08

    申请号：US13028246

    申请日：2011-02-16

    申请人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    发明人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0057

    摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

    摘要翻译： 公开了用于电阻随机存取存储器（RRAM）的可变写和读方法。 这些方法包括初始化写入序列并验证RRAM单元的电阻状态。 如果需要写入脉冲，则通过RRAM单元施加两个或更多写入脉冲，以将期望的数据状态写入RRAM单元。 每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。 随后的写入脉冲被施加到RRAM单元，直到RRAM单元处于期望的数据状态，或直到预定数量的写入脉冲已经被施加到RRAM单元为止。 还公开了一种读取方法，其中随后的读取脉冲通过RRAM单元被施加，直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。