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55 条记录 (耗时 0.04 秒)

    Magnetic sensor including magnetic layer of closed loop shape
    43.
    发明授权
    Magnetic sensor including magnetic layer of closed loop shape 有权
    磁传感器包括闭环形状的磁性层

    公开(公告)号：US09519036B2

    公开(公告)日：2016-12-13

    申请号：US12913433

    申请日：2010-10-27

    申请人： CheolGi Kim ,  Dong Young Kim ,  Jong-Ryul Jeong ,  Quang Hung Tran

    发明人： CheolGi Kim ,  Dong Young Kim ,  Jong-Ryul Jeong ,  Quang Hung Tran

    IPC分类号： G01R33/06 ,  G01R33/09 ,  G01R33/07

    CPC分类号： G01R33/06 ,  G01R33/07 ,  G01R33/09

    摘要： Provided is a magnetic sensor for detecting a magnetic field. The magnetic sensor includes a magnetic layer of a closed loop shape; a pair of current terminals which face each other contacting with the closed loop and through which current is input/output; and a pair of voltage terminals which face each other contacting with the closed loop and from which output voltage is detected. Both an anisotropic magnetoresistance effect (AME) and a planar Hall effect (PHE) contribute to the output voltage and a hysteresis of the output voltage is eliminated by exchange coupling of a ferromagnetic layer by a ferromagnetic-antiferromagnetic layer structure and a ferromagnetic-metal-antiferromagnetic layer structure. Accordingly, it is possible to minimize a hysteresis due to a demagnetization factor of the closed loop, stabilize the output voltage of the magnetic sensor and enhance sensitivity.

    摘要翻译： 提供了一种用于检测磁场的磁传感器。 磁传感器包括闭环形状的磁性层; 彼此面对的一对电流端子与闭环接触并通过其输入/输出电流; 以及一对彼此面对的电压端子与闭环接触并从中检测出输出电压。 各向异性磁阻效应（AME）和平面霍尔效应（PHE）都有助于输出电压，并且通过铁磁反铁磁层结构和强磁性金属层结构的铁磁层的交换耦合来消除输出电压的滞后， 反铁磁层结构。 因此，可以将由于闭环的退磁系数导致的滞后最小化，使磁传感器的输出电压稳定化，提高灵敏度。

    Washing machine
    45.
    发明申请
    Washing machine 有权
    洗衣机

    公开(公告)号：US20120096903A1

    公开(公告)日：2012-04-26

    申请号：US13317298

    申请日：2011-10-14

    申请人： Dong Young Kim ,  Doo Young Ryu

    发明人： Dong Young Kim ,  Doo Young Ryu

    IPC分类号： D06F21/00 ,  B23P17/04 ,  D06F39/02

    CPC分类号： D06F39/02 ,  D06F39/028 ,  D06F39/088 ,  Y10T29/49826

    摘要： A washing machine includes a cabinet, a washing tub disposed in the cabinet, a detergent supply device to supply detergent to the washing tub, a valve housing, having valve devices to control water supply, connected to the detergent supply device, a coupling pipe coupled to a water supply hose outside the cabinet to guide water into the cabinet, and a connection pipe to connect the valve housing to the coupling pipe, wherein the valve housing is directly coupled to the detergent supply device, and the connection pipe is fixed to the valve housing and the coupling pipe.

    摘要翻译： 洗衣机包括机柜，设置在机壳中的洗涤桶，向洗涤桶供应洗涤剂的洗涤剂供应装置，连接到洗涤剂供应装置的具有用于控制供水的阀装置的阀壳体，耦合管 到机柜外部的供水软管，以引导水进入机柜，以及连接管将阀壳体连接到联接管，其中阀壳体直接联接到洗涤剂供应装置，并且连接管被固定到 阀壳和联轴器管。

    Magnetic Sensor
    46.
    发明申请
    Magnetic Sensor 有权
    磁传感器

    公开(公告)号：US20110175605A1

    公开(公告)日：2011-07-21

    申请号：US12913433

    申请日：2010-10-27

    申请人： CheolGi Kim ,  Dong Young Kim ,  Jong-Ryul Jeong ,  Quang Hung Tran

    发明人： CheolGi Kim ,  Dong Young Kim ,  Jong-Ryul Jeong ,  Quang Hung Tran

    IPC分类号： G01R33/06

    CPC分类号： G01R33/06 ,  G01R33/07 ,  G01R33/09

    摘要： Provided is a magnetic sensor for detecting a magnetic field. The magnetic sensor includes a magnetic layer of a closed loop shape; a pair of current terminals which face each other contacting with the closed loop and through which current is input/output; and a pair of voltage terminals which face each other contacting with the closed loop and from which output voltage is detected. Both an anisotropic magnetoresistance effect (AME) and a planar Hall effect (PHE) contribute to the output voltage and a hysteresis of the output voltage is eliminated by exchange coupling of a ferromagnetic layer by a ferromagnetic-antiferromagnetic layer structure and a ferromagnetic-metal-antiferromagnetic layer structure. Accordingly, it is possible to minimize a hysteresis due to a demagnetization factor of the closed loop, stabilize the output voltage of the magnetic sensor and enhance sensitivity.

    摘要翻译： 提供了一种用于检测磁场的磁传感器。 磁传感器包括闭环形状的磁性层; 彼此面对的一对电流端子与闭环接触并通过其输入/输出电流; 以及一对彼此面对的电压端子与闭环接触并从中检测出输出电压。 各向异性磁阻效应（AME）和平面霍尔效应（PHE）都有助于输出电压，并且通过铁磁反铁磁层结构和强磁性金属层结构的铁磁层的交换耦合来消除输出电压的滞后， 反铁磁层结构。 因此，可以将由于闭环的退磁系数导致的滞后最小化，使磁传感器的输出电压稳定化，提高灵敏度。

    High-isolation switching device for millimeter-wave band control circuit
    47.
    发明授权
    High-isolation switching device for millimeter-wave band control circuit 有权
    用于毫米波段控制电路的高隔离开关装置

    公开(公告)号：US07671697B2

    公开(公告)日：2010-03-02

    申请号：US11928410

    申请日：2007-10-30

    申请人： Jae Kyoung Mun ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

    发明人： Jae Kyoung Mun ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

    IPC分类号： H01P1/10 ,  H01L29/80

    CPC分类号： H01P1/15

    摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.

    摘要翻译： 提供了一种用于毫米波段控制电路的高隔离开关装置。 通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置 例如使用开关特性的移相器或数字衰减器。 另外，当开关微波单片集成电路（MMIC）设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要设置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。 因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。 因此，可以降低制造成本。

    ORGANIC THIN FILM TRANSISTORS INCLUDING METAL OXIDE NANOPARTICLES WITHIN A PHOTOCURABLE TRANSPARENT POLYMER GATE INSULATOR LAYER AND METHOD FOR FABRICATING THE SAME BY USING SOL-GEL AND PHOTOCURING REACTIONS
    48.
    发明申请
    ORGANIC THIN FILM TRANSISTORS INCLUDING METAL OXIDE NANOPARTICLES WITHIN A PHOTOCURABLE TRANSPARENT POLYMER GATE INSULATOR LAYER AND METHOD FOR FABRICATING THE SAME BY USING SOL-GEL AND PHOTOCURING REACTIONS 有权
    有机薄膜晶体管，其中包含可光透明聚合物门绝缘体层中的金属氧化物纳米粒子，以及通过使用溶胶凝胶和光刻反应来制备金属氧化物纳米粒子的方法

    公开(公告)号：US20090224234A1

    公开(公告)日：2009-09-10

    申请号：US12361000

    申请日：2009-01-28

    申请人： Jai Kyeong Kim ,  Dong Young Kim ,  June Whan Choi ,  Ho Gyu Yoon

    发明人： Jai Kyeong Kim ,  Dong Young Kim ,  June Whan Choi ,  Ho Gyu Yoon

    IPC分类号： H01L51/30 ,  H01L51/40 ,  H01L51/10

    CPC分类号： H01L51/0537 ,  C01G1/02 ,  C01G23/053

    摘要： The present invention relates to an organic thin film transistor comprising a photocurable transparent inorganic/polymer composite layer as a gate insulator layer in which metal oxide nanoparticles are generated within a photocurable transparent polymer through sol-gel and photocuring reactions and whose permittivity is easily regulated; and a fabrication method thereof. Since the organic thin film transistor according to the present invention utilizes the photocurable transparent inorganic/polymer composite layer showing a significantly high and readily controllable permittivity as a gate insulator, it is capable of operating under low voltage conditions and has a high on/off current ratio due to low leakage current. Further, the organic thin film transistor according to the present invention preserves the unique properties of the photocurable transparent polymer, enabling the formation of a photocurable micropattern of a gate insulator having high processibility

    摘要翻译： 本发明涉及一种有机薄膜晶体管，其包含可光固化的透明无机/聚合物复合层作为栅极绝缘体层，其中通过溶胶 - 凝胶和光固化反应在可光固化的透明聚合物内产生金属氧化物纳米颗粒，并且其介电常数易于调节; 及其制造方法。 由于根据本发明的有机薄膜晶体管使用显示出非常高且易于控制的介电常数的可光固化的透明无机/聚合物复合层作为栅极绝缘体，因此能够在低电压条件下工作并且具有高的导通/截止电流 比例由于漏电流低。 此外，根据本发明的有机薄膜晶体管保持了光固化性透明聚合物的独特性质，能够形成具有高加工性的栅极绝缘体的光固化微图案

    Millimeter-wave band broadband microstrip-waveguide transition apparatus having a main patch and a parasitic patch on different dielectric substrates
    49.
    发明授权
    Millimeter-wave band broadband microstrip-waveguide transition apparatus having a main patch and a parasitic patch on different dielectric substrates 有权
    毫米波段宽带微带波导转换装置，其具有在不同电介质基底上的主贴片和寄生贴片

    公开(公告)号：US07486156B2

    公开(公告)日：2009-02-03

    申请号：US11486823

    申请日：2006-07-14

    申请人： Hong Yeol Lee ,  Dong Suk Jun ,  Dong Young Kim ,  Sang Seok Lee ,  Yong Won Kim

    发明人： Hong Yeol Lee ,  Dong Suk Jun ,  Dong Young Kim ,  Sang Seok Lee ,  Yong Won Kim

    IPC分类号： H01P5/107

    CPC分类号： H01P5/107

    摘要： Provided is a broadband microstrip-waveguide transition apparatus operating in a millimeter waveband. The millimeter-wave band broadband microstrip-waveguide transition apparatus includes a slot for transferring an electromagnetic signal propagating along a microstrip line, a main patch positioned between the slot and a waveguide and resonating from the signal transferred from the slot, and a parasitic patch positioned between the main patch and the waveguide and resonating together with the main patch. According to the millimeter-wave band broadband microstrip-waveguide transition apparatus, it is possible to transfer a signal from the microstrip line to the waveguide, and to increase a resonance bandwidth to a broadband level.

    摘要翻译： 提供了以毫米波段工作的宽带微带波导转换装置。 毫米波段宽带微带波导转换装置包括用于传送沿着微带线传播的电磁信号的槽，位于槽和波导之间的主贴片，并且与从槽传输的信号谐振，并将寄生贴片定位 在主贴片和波导之间并与主贴片共振。 根据毫米波带宽带微带波导转换装置，可以将来自微带线的信号传输到波导，并将共振带宽增加到宽带级。

    HIGH-ISOLATION SWITCHING DEVICE FOR MILLIMETER-WAVE BAND CONTROL CIRCUIT
    50.
    发明申请
    HIGH-ISOLATION SWITCHING DEVICE FOR MILLIMETER-WAVE BAND CONTROL CIRCUIT 有权
    用于微波波段控制电路的高隔离开关装置

    公开(公告)号：US20080129427A1

    公开(公告)日：2008-06-05

    申请号：US11928410

    申请日：2007-10-30

    申请人： Jae Kyoung MUN ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

    发明人： Jae Kyoung MUN ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

    IPC分类号： H01P1/10

    CPC分类号： H01P1/15

    摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.

    摘要翻译： 提供了一种用于毫米波段控制电路的高隔离开关装置。 通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置 例如使用开关特性的移相器或数字衰减器。 另外，当开关微波单片集成电路（MMIC）被设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要配置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。 因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。 因此，可以降低制造成本。