摘要:
The present invention relates to a CD43 epitope expressed on human acute leukemia and lymphoblastic lymphoma cells and its use. More particularly, the present invention relates to a CD43 epitope expressed on human acute leukemia, lymphoblastic lymphoma cells, but not on mature hematopoietic cells, hematopoietic stem cells and non-hematopoietic cells, and to its diagnostic and therapeutic application on acute leukemia and lymphoblastic lymphoma.
摘要:
A device isolation structure of semiconductor device includes a semiconductor substrate having a cell region, a low voltage region and a high voltage region defined therein. A cell trench isolation region is disposed in the cell region. A low voltage trench isolation region is disposed in the low voltage region and extends deeper into the substrate than the cell trench isolation region. A first high voltage trench isolation region is disposed in the high voltage region and extends deeper into the substrate than the low voltage trench isolation region. A second high voltage trench isolation region is disposed in the high voltage region and extends deeper into the substrate than the low voltage trench isolation region but shallower than the first high voltage trench isolation region.
摘要:
A device isolation structure of semiconductor device includes a semiconductor substrate having a cell region, a low voltage region and a high voltage region defined therein. A cell trench isolation region is disposed in the cell region. A low voltage trench isolation region is disposed in the low voltage region and extends deeper into the substrate than the cell trench isolation region. A first high voltage trench isolation region is disposed in the high voltage region and extends deeper into the substrate than the low voltage trench isolation region. A second high voltage trench isolation region is disposed in the high voltage region and extends deeper into the substrate than the low voltage trench isolation region but shallower than the first high voltage trench isolation region.
摘要:
A NAND type flash memory device has a dummy region forming a dummy pattern. In the flash memory device, a common source line is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells.
摘要:
An obstruction-determining apparatus for preventing a mobile robot from being obstructed in a niche and a boundary-estimation method and medium using the obstruction-determining apparatus are disclosed. More particularly, an obstruction-determining apparatus which can determine whether a mobile robot is obstructed in a niche, and enable a mobile robot to easily escape from an obstacle if the mobile robot is determined to be obstructed in the niche, and a boundary-estimation method and medium for estimating the boundaries of an obstacle with a niche using the obstruction-determining apparatus. The obstruction-determining apparatus includes a contact module which collides with an obstacle above the mobile robot, a contact-operating module which rotates or moves linearly as a result of the collision between the contact module and the obstacle, and a sensing module which detects the rotation or the linear movement of the contact-operating module and determines whether the mobile robot is obstructed in a niche.
摘要:
A semiconductor device includes a semiconductor substrate having a resistor region, an isolation layer disposed in the resistor region, the isolation layer defining active regions, first conductive layer patterns disposed on the active regions, a second conductive layer pattern covering the first conductive layer patterns and disposed on the isolation layer, the second conductive layer pattern and the first conductive layer patterns constituting a load resistor pattern, an upper insulating layer disposed over the load resistor pattern, and resistor contact plugs disposed over the active regions, the resistor contact plugs penetrating the upper insulating layer to contact the load resistor pattern.
摘要:
The present invention relates to a CD43 epitope expressed on human acute leukemia and lymphoblastic lymphoma cells and its use. More particularly, the present invention relates to a CD43 epitope expressed on human acute leukemia, lymphoblastic lymphoma cells, but not on mature hematopoietic cells, hematopoietic stem cells and non-hematopoietic cells, and to its diagnostic and therapeutic application on acute leukemia and lymphoblastic lymphoma.
摘要:
The present invention relates to a CD43 epitope expressed on human acute leukemia and lymphoblastic lymphoma cells and its use. More particularly, the present invention relates to a CD43 epitope expressed on human acute leukemia, lymphoblastic lymphoma cells, but not on mature hematopoietic cells, hematopoietic stem cells and non-hematopoietic cells, and to its diagnostic and therapeutic application on acute leukemia and lymphoblastic lymphoma.
摘要:
An obstruction-determining apparatus for preventing a mobile robot from being obstructed in a niche and a boundary-estimation method and medium using the obstruction-determining apparatus are disclosed. More particularly, an obstruction-determining apparatus which can determine whether a mobile robot is obstructed in a niche, and enable a mobile robot to easily escape from an obstacle if the mobile robot is determined to be obstructed in the niche, and a boundary-estimation method and medium for estimating the boundaries of an obstacle with a niche using the obstruction-determining apparatus. The obstruction-determining apparatus includes a contact module which collides with an obstacle above the mobile robot, a contact-operating module which rotates or moves linearly as a result of the collision between the contact module and the obstacle, and a sensing module which detects the rotation or the linear movement of the contact-operating module and determines whether the mobile robot is obstructed in a niche.
摘要:
A semiconductor device includes a semiconductor substrate having a resistor region, an isolation layer disposed in the resistor region, the isolation layer defining active regions, first conductive layer patterns disposed on the active regions, a second conductive layer pattern covering the first conductive layer patterns and disposed on the isolation layer, the second conductive layer pattern and the first conductive layer patterns constituting a load resistor pattern, an upper insulating layer disposed over the load resistor pattern, and resistor contact plugs disposed over the active regions, the resistor contact plugs penetrating the upper insulating layer to contact the load resistor pattern.