摘要:
This invention provides a large image pickup apparatus for, e.g., X-rays that can provide a seamless image by using a plurality of single-crystal silicon image pickup elements. More specifically, the image pickup apparatus includes an image pickup region where a plurality of pixels which include photoelectric conversion units are arranged to pick up an object image by dividing the object image into a plurality of regions, and a scan circuit (501, 507) arranged between the plurality of photoelectric conversion units in the region to commonly process the plurality of pixels and/or signals from the plurality of pixels.
摘要:
In a semiconductor device which has capacitors respectively connected to multiple input terminals, and in which the remaining terminals of the capacitors are commonly connected to a sense amplifier, the capacitors and the sense amplifier are formed by utilizing a semiconductor layer on an insulating surface, whereby high-speed, high-precision processing of signals having a large number of bits supplied from the multiple input terminals is realized by a small circuit scale.
摘要:
A display device including a liquid crystal held between an active matrix substrate made up by arranging thin film transistors thereon, each using polycrystalline silicon as a semiconductor layer, in one-to-one relation to intersections between a plurality of signal lines and a plurality of scan lines, and an opposite substrate opposed to the active matrix substrate, wherein the active matrix substrate includes a film having tensile stress disposed at least below or above the semiconductor layer.
摘要:
A display apparatus comprising a reflective type panel displaying images by reflecting the light from at least one light source, wherein each of a plurality of pixel electrodes of the reflective type panel is composed of a reflective electrode. Each inclination angle of the pixel electrodes with respect to the panel surface is arranged to be different from others.
摘要:
An image sensing apparatus is provided, which is provided with a plurality of image sensing elements each including a plurality of photoelectric conversion sections and an adding circuit adapted to add signals from the plurality of photoelectric conversion sections to obtain a one-pixel signal, wherein the adding circuit adds the signals such that the one-pixel signals obtained by the addition are arranged at equal intervals in an area extending over the plurality of image sensing elements.
摘要:
To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要:
To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要:
A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance.
摘要:
The invention provides a photoelectric conversion device, in which a decrease in sensitivity and a crosstalk between wirings are suppressed. Plural pixel columns are arranged in one direction, plural pixels are arranged in a different direction to the one direction in a column manner in the pixel column, and the pixel includes a photodiode PD, a reset transistor M4 for resetting the photodiode PD, and a source follower input transistor M3 for receiving a signal from the photodiode PD. An independent readout wiring 16 is individually provided for each pixel. The reset transistor M4 and the source follower input transistor M3 included in one pixel column or another pixel column are arranged between the photodiode column in one pixel column and the photodiode column in another pixel column arranged adjacent to the one pixel column.
摘要:
This invention provides an image pickup device comprising a plurality of pixels each including a photoelectric conversion unit, a semiconductor area to which a signal from the photoelectric conversion unit is transferred, a transfer switch for transferring the signal from the photoelectric conversion unit to the semiconductor area, and a read unit for reading out the signal from the semiconductor area, and a drive circuit for outputting a first level at which the transfer switch is set in an OFF state, a second level at which the transfer switch is set in an ON state, and a third level between the first level and the second level, wherein the drive circuit controls to hold the third level for a predetermined time while the transfer switch is changing from the ON state to the OFF state.