摘要:
A display device including a liquid crystal held between an active matrix substrate made up by arranging thin film transistors thereon, each using polycrystalline silicon as a semiconductor layer, in one-to-one relation to intersections between a plurality of signal lines and a plurality of scan lines, and an opposite substrate opposed to the active matrix substrate, wherein the active matrix substrate includes a film having tensile stress disposed at least below or above the semiconductor layer.
摘要:
A liquid crystal display device comprises two parallel substrates holding a liquid crystal material filling space between two parallel substrates, wherein one of the two parallel substrates is provided, for each picture element, with a transparent electrode and a lightshielding layer which has an opening located inside the outer periphery of the transparent electrode as observed from a direction perpendicular to the two substrates, and the lightshielding layer is designed so that the distance from an outer periphery of the transparent electrode to an outer periphery of the opening is set substantially larger on the side where rubbing of one substrate is started than on the side where the rubbing is ended, whereas it is set substantially larger on the side where the rubbing of the other substrate is ended than on the side where the rubbing is started as observed from a direction perpendicular to the two substrates.
摘要:
A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.
摘要:
A small-size and large-capacitance capacitor is provided for the peripheral driving circuit of a liquid crystal display device. A capacitor exhibiting crystalline property is provided on a monocrystalline silicon in the peripheral driving circuit of a liquid crystal display device using an insulator film deposition process used to manufacture TFTs (thin-film transistors) of a display pixel portion and the peripheral driving circuit. The capacitor, using monocrystalline silicon as electrodes and an insulator on the monocrsytalline silicon as a dielectric, has a small size and a large capacitance as compared with a capacitor manufactured on amorphous silicon or monocrytalline silicon, and is thus capable of high quality display.
摘要:
A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.
摘要:
There is provided a liquid crystal unit having an on-chip photodetector.On a transparent substrate are laid down a metallic wiring, an n-type a-Si, an a-SiGe, and a p-type a-Si successively, an insulating film is formed, and then a transparent electrode is formed to have a light detection region.
摘要:
A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.
摘要:
A liquid crystal display apparatus is provided in which a semiconductor layer for constituting the matrix substrate or an electroconductive layer is placed under the transistor with interposition of an insulating layer, and the insulating layer has a larger thickness between the source and the semiconductor layer or the electroconductive layer than that between the drain and the semiconductor layer or the electroconductive layer.
摘要:
The present invention is directed to a method for manufacturing semiconductor devices including a process of etching a member for use in making a semiconductor device. An improvement resides in a process for holding the member, using holding means which is placed into contact with the peripheries of the member, as well as forming a space including one face of the member, and a process for introducing a gas into the space, and blasting the gas from a clearance between the member and the holding means, as well as injecting an etching agent to the member from the opposite face side of the member to etch the other face of the member.
摘要:
In a disk drive device, a magnetic recording disk is mounted on a hub. A base rotatably supports the hub via a bearing unit. The base has a ring-shaped wall that surrounds the bearing unit and that protrudes towards the hub. A laminated core is fixed to the base. The laminated core has a ring portion and twelve teeth that radially outwardly extend from the ring portion. Coils are wound around the twelve teeth. The base includes an increasing-thickness portion formed so that the less the distance between a part of the increasing-thickness portion and the ring-shaped wall is, the thicker the part of the increasing-thickness portion becomes.